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OSA Quantum 2.0 Conference

New Host Materials for Rare Earth Ions

Christopher M. Phenicie, Paul Stevenson, Sacha Welinski, Brendon C. Rose, Abraham T. Asfaw, S. A. Lyon, Nathalie P. de Leon, Jeff D. Thompson, R. J. Cava

Published Jan 1, 2020• 0 citations
Publisher

Abstract

Er3+ ions in crystals are promising for quantum networks. We demonstrate ion implantation of Er3+ into TiO2, a potential low-noise host material, with narrow optical and spin linewidths and high implantation yield.
DOI
10.1364/quantum.2020.qtu8b.5

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Erbium-doped solid-state crystals present an attractive platform for quantum communication, combining the telecom C-band spin–photon interface and long coherence times of erbium (Er3+) with the versatility of solid-state hosts. However, across commonly investigated materials, Er3+ is a “dim” ion, with low optical emission rates of kilohertz at most. This makes implementing quantum information transfer protocols (e.g., quantum teleportation) at usable rates a major challenge. One route to increasing Er3+ radiative rates is by careful selection of crystal hosts: the crystal field around an Er3+ ion may hybridize states of different parity, potentially increasing the radiative rate of its telecom transition. Here, using high-throughput computational methods, the radiative rates of Er3+ embedded in 9215 materials are estimated. The computation shows that careful host selection could increase Er3+ radiative rates by an order of magnitude compared to commonly studied hosts. Calculated results are compared with experimental radiative rates in a subset of materials, finding notable clustering but weak correlation. Nevertheless, the “brightest” candidates combined with suitable nanophotonics engineering could push Er3+-based quantum memories into the megahertz bandwidth regime.

Applied Physics Letters•Sep 7, 2026•0 citations
Atomic and atomlike defects in the solid state are widely explored for quantum computers, networks, and sensors. Rare earth ions are an attractive class of atomic defects that feature narrow spin and optical transitions that are isolated from the host crystal, allowing incorporation into a wide range of materials. However, the realization of long electronic spin coherence times is hampered by magnetic noise from abundant nuclear spins in the most widely studied host crystals. Here, we demonstrate that Er 3+ ions can be introduced via ion implantation into TiO 2, a host crystal that has not been studied extensively for rare earth ions and has a low natural abundance of nuclear spins. We observe efficient incorporation of the implanted Er 3+ into the Ti 4+ site (>50% yield) and measure narrow inhomogeneous spin and optical line widths (20 and 460 MHz, respectively) that are comparable to bulk-doped crystalline hosts for Er 3+ . This work demonstrates that ion implantation is a viable path to studying rare earth ions in new hosts and is a significant step toward realizing individually addressed rare earth ions with long spin coherence times for quantum technologies.
Erbium-doped materials can serve as spin-photon interfaces with optical transitions in the telecom CCC band, making them an exciting class of materials for long-distance quantum communication. However, the spin and optical coherence times of Er3+{\mathrm{Er}}^{3+}Er3+ ions are limited by currently available host materials, motivating the development of new Er3+{\mathrm{Er}}^{3+}Er3+-containing materials. Here we demonstrate the use of ion implantation to efficiently screen prospective host candidates, and show that disorder introduced by ion implantation can be mitigated through post-implantation thermal processing to achieve inhomogeneous linewidths comparable to bulk linewidths in as-grown samples. We present optical spectroscopy data for each host material, which allows us to determine the level structure of each site, allowing us to compare the environments of Er3+{\mathrm{Er}}^{3+}Er3+ introduced via implantation and via doping during growth. We demonstrate that implantation can generate a range of local environments for Er3+{\mathrm{Er}}^{3+}Er3+, including those observed in bulk-doped materials, and that the populations of these sites can be controlled with thermal processing.
Since quantum information technologies are expected to offer communication security and high computational capacities, research in the field is currently attracting a lot of attention. Among the materials studied so far, rare earth doped inorganic insulators are one of the most promising. With the different available trivalent rare earth ions, the visible and the IR range including the telecom wavelength at 1.5 μm can be covered. Transitions are usually narrow, and at low temperatures, long optical and spin coherence times can often be observed. Investigations using bulk single crystals have already led to many promising results. Recently, spectroscopic studies have been extended to other forms of inorganic materials, such as transparent ceramics, thin films, and nanoparticles for single rare‐earth qubits. Progress in these areas is expected to offer many new possibilities for the design of quantum light‐matter interfaces and scalable quantum memories and processors.
The use of rare earth ions (REIs)—typically embedded as atomic defects in solids—has emerged as a promising strategy for practical quantum memories. In particular, the Er ion has garnered significant attention due to its telecom C-band optical transition, which makes it a suitable candidate for integration into existing optical fiber networks without the need for photon wavelength conversion. However, successful scalability of such a quantum memory platform would benefit greatly from employing a host material that is fully compatible with silicon and modern CMOS fabrication processes. In this study, we present the synthesis of Er-doped TiO2 thin films directly on standard silicon or silicon-on-insulator (SOI) substrates using atomic layer deposition (ALD). Our thin film exhibits favorable emitter properties at cryogenic temperatures (T = 3.5 K), including a narrow inhomogeneous linewidth and optical lifetime approaching that of bulk values. Additionally, the ALD process provides ample opportunities for device fabrication and integration with other components, further enhancing its potential for practical applications. Overall, our findings suggest that Er-doped TiO2 thin films synthesized via ALD represent a promising approach for developing practical quantum memories that can be seamlessly integrated with silicon photonics. This work lays a foundation for the development of quantum technologies with potential applications in communication, computing, and cryptography.
Erbium-doped solid-state crystals present an attractive platform for quantum communication, combining the telecom C-band spin–photon interface and long coherence times of erbium (Er3+) with the versatility of solid-state hosts. However, across commonly investigated materials, Er3+ is a “dim” ion, with low optical emission rates of kilohertz at most. This makes implementing quantum information transfer protocols (e.g., quantum teleportation) at usable rates a major challenge. One route to increasing Er3+ radiative rates is by careful selection of crystal hosts: the crystal field around an Er3+ ion may hybridize states of different parity, potentially increasing the radiative rate of its telecom transition. Here, using high-throughput computational methods, the radiative rates of Er3+ embedded in 9215 materials are estimated. The computation shows that careful host selection could increase Er3+ radiative rates by an order of magnitude compared to commonly studied hosts. Calculated results are compared with experimental radiative rates in a subset of materials, finding notable clustering but weak correlation. Nevertheless, the “brightest” candidates combined with suitable nanophotonics engineering could push Er3+-based quantum memories into the megahertz bandwidth regime.