Since quantum information technologies are expected to offer communication security and high computational capacities, research in the field is currently attracting a lot of attention. Among the materials studied so far, rare earth doped inorganic insulators are one of the most promising. With the different available trivalent rare earth ions, the visible and the IR range including the telecom wavelength at 1.5 μm can be covered. Transitions are usually narrow, and at low temperatures, long optical and spin coherence times can often be observed. Investigations using bulk single crystals have already led to many promising results. Recently, spectroscopic studies have been extended to other forms of inorganic materials, such as transparent ceramics, thin films, and nanoparticles for single rare‐earth qubits. Progress in these areas is expected to offer many new possibilities for the design of quantum light‐matter interfaces and scalable quantum memories and processors.
Since quantum information technologies are expected to offer communication security and high computational capacities, research in the field is currently attracting a lot of attention. Among the materials studied so far, rare earth doped inorganic insulators are one of the most promising. With the different available trivalent rare earth ions, the visible and the IR range including the telecom wavelength at 1.5 μm can be covered. Transitions are usually narrow, and at low temperatures, long optical and spin coherence times can often be observed. Investigations using bulk single crystals have already led to many promising results. Recently, spectroscopic studies have been extended to other forms of inorganic materials, such as transparent ceramics, thin films, and nanoparticles for single rare‐earth qubits. Progress in these areas is expected to offer many new possibilities for the design of quantum light‐matter interfaces and scalable quantum memories and processors.
Abstract Rare earth doped crystals show, at low temperatures, extremely narrow optical homogeneous linewidths, as well as long spin coherence lifetimes, a unique combination in the solid state. This makes these materials attractive for optical quantum technologies like quantum communication and processing. Most of the results in this field have so far used bulk crystals because of their exceptional spectroscopic properties. Crystalline thin films can combine these properties with the possibilities offered by integration in photonic circuits in terms of compactness, stability, energy efficiency, and scalability. In this review, recent results on different platforms containing rare earth ions and targeting quantum technologies, including lithium niobate and silicon films, and oxide films deposited on Si, are summarized. Current approaches for obtaining thin films and devices are described, together with RE spectroscopic properties and applications to quantum technologies. The opportunities and challenges offered or faced by the different platforms are also discussed.
Rare-earth ion doped crystals possess stable solid state physicochemical properties and long optical coherence time and spin coherence time, thus showing important development prospect in quantum information science and technology area. Investigations on macroscopic bulk rare-earth single crystals have obtained many promising results, especially in the field of optical quantum memory. With the rapid development of quantum information science, a variety of new functions or multifunctional integrations are found in rare earth crystal systems, such as on chip quantum storage, microwave to optical frequency conversion, scalable quantum single photon sources, and quantum logic gates. As a result, beyond the macroscopic bulk rare-earth single crystals, micro/nano-scale rare-earth crystals have received much attention in recent years and they are regarded as promising candidates in highly integrated hybrid quantum systems and miniaturized quantum devices. Moreover, wet chemical method synthesized micro/nano-scale rare-earth crystals have lower growth difficulty and more flexible manipulation in volume, shape and composition. Therefore, exploring high-performance micro/nano-scale rare-earth crystals and precisely manipulating their quantum states have become one of the important directions in today’s quantum information science and technology research. In this review, we first briefly introduce the basic concepts and high resolution spectroscopic techniques that are commonly used in rare earth ion doped crystals for quantum information science and technologies, such as hole burning technique and photon echo technique. Then we summarize comprehensively recent research status and development trends of rare earth ion doped polycrystalline nanoparticles, thin films, single crystal based micro systems, and some other micro/nano-scale rare earth platforms in terms of material fabrication, quantum coherence property, dephasing mechanisms, and also quantum device explorations. The latest research advances in quantum information applications such as quantum storage, quantum frequency conversion, quantum single photon sources and quantum logic gates are given. Finally, we discuss the possible optimization directions and strategies to improve the component design, material synthesis and quantum performance of micro/nano-scale rare earth crystals and their related quantum devices. This review highlights that the micro/nano-scale rare earth crystals may offer many new possibilities for designing quantum light-matter interfaces, thus are promising quantum systems to develop scalable and integrated quantum devices in the future.
Coherent quantum devices play a central role in quantum science and engineering. Rare-earth ions such as erbium in solids feature numerous 4f- intra-shell transitions that are effectively shielded from their crystalline surroundings by closed outer shells, allowing for long spin coherence times and narrow optical transitions. Recent ensemble experiments have established the rare-earth doped crystals as the leading materials for optical quantum memories. However, the development of large-scale quantum devices based on rare-earth doped materials has remained a challenge. Here we describe a scalable quantum photonic platform based on epitaxially grown oxide thin films doped with trivalent ions on silicon substrates. The platform builds upon the recent developments of high quality epitaxial rare-earth doped oxides on silicon, and highlights the integration of quantum coherent materials with existing silicon technologies for ultimate device scalability. The proposed device platform builds upon our capability to epitaxially grow high quality, near-lattice-matched Y2O3 thin films on silicon. The epitaxial thin film is of high structural quality and offers several distinct advantages: (1) significantly less optical loss and better quantum emitter coherence; (2) atomic precision placement of rare-earth emitters (via delta doping) with respect to the photonic mode for controllable ion-photon coupling; (3) scalable top-down device fabrication using standard lithography and etching techniques; (4) heterogeneous integration with silicon takes full advantage of existing silicon photonics technologies for routing, tuning, and modulation of the quantum emission from rare-earth ions.
Abstract Rare‐earth dopants are arguably one of the most studied optical centers in solids, with applications spanning from laser optoelectronics, biosensing, lighting to displays. Nevertheless, harnessing rare‐earth dopants’ extraordinary coherence properties for quantum information technologies is a relatively new endeavor, and has been rapidly advancing in recent years. Leveraging the state‐of‐the‐art photonic technologies, on‐chip rare‐earth quantum devices functioning as quantum memories, single photon sources and transducers have emerged, often with potential performances unrivaled by other solid‐state quantum technologies. These existing quantum devices, however, nearly exclusively rely on macroscopic bulk materials as substrates, which may limit future scalability and functionalities of such quantum systems. Thus, the development of new platforms beyond single crystal bulk materials has become an interesting approach. In this review article, we summarize the latest progress towards nanoscale, low‐dimensional rare‐earth doped materials for enabling next generation rare‐earth quantum devices. Different platforms with a variety of synthesis methods are surveyed. Their key metrics measured to date are presented and compared. Special attention is placed on the connection between the topology of each platform to its target device applications. Lastly, an outlook for near term prospects of these platforms are given, with a hope to spur broader interests in rare‐earth doped materials as a promising candidate for quantum information technologies.
Quantum light-matter interfaces that reversibly map the quantum state of photons onto the quantum states of atoms, are essential components in the quantum engineering toolbox with applications in quantum communication, computing, and quantum-enabled sensing. In this talk I present our progress towards developing on-chip quantum light-matter interfaces based on nanophotonic resonators fabricated in rare-earth-doped crystals known to exhibit the longest optical and spin coherence times in the solid state. We recently demonstrated coherent control of neodymium (Nd3+) ions coupled to yttrium orthosilicate Y2SiO5 (YSO) photonic crystal nano-beam resonator. The coupling of the Nd3+ 883 nm 4I9/2-4F3/2 transition to the nano-resonator results in a 40 fold enhancement of the transition rate (Purcell effect), and increased optical absorption (~80%) - adequate for realizing efficient optical quantum memories via cavity impedance matching. Optical coherence times T2 up to 100 μs with low spectral diffusion were measured for ions embedded in photonic crystals, which are comparable to those observed in unprocessed bulk samples. This indicates that the remarkable coherence properties of REIs are preserved during nanofabrication process. Multi-temporal mode photon storage using stimulated photon echo and atomic frequency comb (AFC) protocols were implemented in these nano-resonators. Our current technology can be readily transferred to Erbium (Er) doped YSO devices, therefore opening the possibility of efficient on-chip optical quantum memory at 1.5 μm telecom wavelength. Integration with superconducting qubits can lead to devices for reversible quantum conversion of optical photons to microwave photons.