Abstract Rare‐earth dopants are arguably one of the most studied optical centers in solids, with applications spanning from laser optoelectronics, biosensing, lighting to displays. Nevertheless, harnessing rare‐earth dopants’ extraordinary coherence properties for quantum information technologies is a relatively new endeavor, and has been rapidly advancing in recent years. Leveraging the state‐of‐the‐art photonic technologies, on‐chip rare‐earth quantum devices functioning as quantum memories, single photon sources and transducers have emerged, often with potential performances unrivaled by other solid‐state quantum technologies. These existing quantum devices, however, nearly exclusively rely on macroscopic bulk materials as substrates, which may limit future scalability and functionalities of such quantum systems. Thus, the development of new platforms beyond single crystal bulk materials has become an interesting approach. In this review article, we summarize the latest progress towards nanoscale, low‐dimensional rare‐earth doped materials for enabling next generation rare‐earth quantum devices. Different platforms with a variety of synthesis methods are surveyed. Their key metrics measured to date are presented and compared. Special attention is placed on the connection between the topology of each platform to its target device applications. Lastly, an outlook for near term prospects of these platforms are given, with a hope to spur broader interests in rare‐earth doped materials as a promising candidate for quantum information technologies.
Abstract Rare‐earth dopants are arguably one of the most studied optical centers in solids, with applications spanning from laser optoelectronics, biosensing, lighting to displays. Nevertheless, harnessing rare‐earth dopants’ extraordinary coherence properties for quantum information technologies is a relatively new endeavor, and has been rapidly advancing in recent years. Leveraging the state‐of‐the‐art photonic technologies, on‐chip rare‐earth quantum devices functioning as quantum memories, single photon sources and transducers have emerged, often with potential performances unrivaled by other solid‐state quantum technologies. These existing quantum devices, however, nearly exclusively rely on macroscopic bulk materials as substrates, which may limit future scalability and functionalities of such quantum systems. Thus, the development of new platforms beyond single crystal bulk materials has become an interesting approach. In this review article, we summarize the latest progress towards nanoscale, low‐dimensional rare‐earth doped materials for enabling next generation rare‐earth quantum devices. Different platforms with a variety of synthesis methods are surveyed. Their key metrics measured to date are presented and compared. Special attention is placed on the connection between the topology of each platform to its target device applications. Lastly, an outlook for near term prospects of these platforms are given, with a hope to spur broader interests in rare‐earth doped materials as a promising candidate for quantum information technologies.
Rare-earth ion doped crystals possess stable solid state physicochemical properties and long optical coherence time and spin coherence time, thus showing important development prospect in quantum information science and technology area. Investigations on macroscopic bulk rare-earth single crystals have obtained many promising results, especially in the field of optical quantum memory. With the rapid development of quantum information science, a variety of new functions or multifunctional integrations are found in rare earth crystal systems, such as on chip quantum storage, microwave to optical frequency conversion, scalable quantum single photon sources, and quantum logic gates. As a result, beyond the macroscopic bulk rare-earth single crystals, micro/nano-scale rare-earth crystals have received much attention in recent years and they are regarded as promising candidates in highly integrated hybrid quantum systems and miniaturized quantum devices. Moreover, wet chemical method synthesized micro/nano-scale rare-earth crystals have lower growth difficulty and more flexible manipulation in volume, shape and composition. Therefore, exploring high-performance micro/nano-scale rare-earth crystals and precisely manipulating their quantum states have become one of the important directions in today’s quantum information science and technology research. In this review, we first briefly introduce the basic concepts and high resolution spectroscopic techniques that are commonly used in rare earth ion doped crystals for quantum information science and technologies, such as hole burning technique and photon echo technique. Then we summarize comprehensively recent research status and development trends of rare earth ion doped polycrystalline nanoparticles, thin films, single crystal based micro systems, and some other micro/nano-scale rare earth platforms in terms of material fabrication, quantum coherence property, dephasing mechanisms, and also quantum device explorations. The latest research advances in quantum information applications such as quantum storage, quantum frequency conversion, quantum single photon sources and quantum logic gates are given. Finally, we discuss the possible optimization directions and strategies to improve the component design, material synthesis and quantum performance of micro/nano-scale rare earth crystals and their related quantum devices. This review highlights that the micro/nano-scale rare earth crystals may offer many new possibilities for designing quantum light-matter interfaces, thus are promising quantum systems to develop scalable and integrated quantum devices in the future.
Abstract Rare earth doped crystals show, at low temperatures, extremely narrow optical homogeneous linewidths, as well as long spin coherence lifetimes, a unique combination in the solid state. This makes these materials attractive for optical quantum technologies like quantum communication and processing. Most of the results in this field have so far used bulk crystals because of their exceptional spectroscopic properties. Crystalline thin films can combine these properties with the possibilities offered by integration in photonic circuits in terms of compactness, stability, energy efficiency, and scalability. In this review, recent results on different platforms containing rare earth ions and targeting quantum technologies, including lithium niobate and silicon films, and oxide films deposited on Si, are summarized. Current approaches for obtaining thin films and devices are described, together with RE spectroscopic properties and applications to quantum technologies. The opportunities and challenges offered or faced by the different platforms are also discussed.
The growing interest in optical quantum systems has led to the exploration of multiple platforms. Though pioneering experiments were performed in trapped atom and trapped ion systems, solid state systems show promise of being scalable and robust. Rare earth dopants in crystalline hosts are an appealing option because they possess a rich spectrum of energy levels that result from a partially filled electron orbital. While level structure varies across the period, all elements possess crystal field splittings corresponding to near infra-red or optical frequencies, as well as Zeeman and often hyperfine levels separated by radio frequency and microwave frequencies. These levels demonstrate long excited-state lifetimes and coherence times and have been used in diverse applications, including demonstrating storage of a photonic state, converting of optical to microwave photons, and manipulating a single ion as a single qubit. The ions' weak interaction with their environment results in low coupling to optical fields, which had previously required measurements with macroscopically large ensembles of ions. Coupling the ions to an optical cavity enables the use of a smaller ensemble, which is required for the development of the aforementioned technologies in an on-chip scalable architecture. This thesis contains recent progress towards fabricating optical micro and nanocavities coupled to ensembles of erbium ions, mainly erbium in yttrium orthosilicate. In one design, focused ion beam milling was used to create a triangular nanobeam photonic crystal cavity in a bulk erbium-doped substrate. A second design leveraged the fabrication capabilities of silicon photonics, defining amorphous silicon ring resonators using electron beam lithography and dry etching. These devices coupled evanescently to erbium ions below the ring, in the bulk substrate. Simulation, design, fabrication, and characterization of both resonators are discussed. Coupling between the ions and the resonator is demonstrated for each, and capabilities offered by these devices are described. Preliminary work implementing coherent control of erbium ions is presented. Lastly, alternative substrates are evaluated for possible future solid-state erbium systems.
Since quantum information technologies are expected to offer communication security and high computational capacities, research in the field is currently attracting a lot of attention. Among the materials studied so far, rare earth doped inorganic insulators are one of the most promising. With the different available trivalent rare earth ions, the visible and the IR range including the telecom wavelength at 1.5 μm can be covered. Transitions are usually narrow, and at low temperatures, long optical and spin coherence times can often be observed. Investigations using bulk single crystals have already led to many promising results. Recently, spectroscopic studies have been extended to other forms of inorganic materials, such as transparent ceramics, thin films, and nanoparticles for single rare‐earth qubits. Progress in these areas is expected to offer many new possibilities for the design of quantum light‐matter interfaces and scalable quantum memories and processors.
Quantum photonics provides a powerful toolbox with vast applications ranging from quantum simulation, photonic information processing, all optical universal quantum computation, secure quantum internet as well as quantum enhanced sensing. Many of these applications require the integration of several complex optical elements and material systems which pose a challenge to scalability. It is essential to integrate linear and non-linear photonics on a chip to tackle this issue leading to more compact, high bandwidth devices. In this thesis we demonstrate a pathway to achieving several components in the quantum photonic toolbox on the same integrated photonic platform. We focus particularly on two of the more nontrivial components, a single photon source and an integrated quantum light-matter interface. We address the problem of a scalable, chip integrated, fast single photon source, by using atomically thin layers of 2D materials interfaced with plasmonic waveguides. We further embark on the challenge of creating a new material system by integrating rare earth ions with the emerging commercial platform of thin film lithium niobate on insulator. Rare earth ions have found widespread use in classical and quantum information processing. However, these are traditionally doped in bulk crystals which hinder their scalability. We demonstrate an integrated photonic interface for rare earth ions in thin film lithium niobate that preserves the optical and coherence properties of the ions. This combination of rare earth ions with the chip-scale active interface of thin film lithium niobate opens a plethora of opportunities for compact optoelectronic devices. As an immediate application we demonstrate an integrated optical quantum memory with a rare earth atomic ensemble in the thin film. The new light matter interface in thin film lithium niobate acts as a key enabler in an already rich optical platform representing a significant advancement in the field of integrated quantum photonics.