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New insights in low-frequency excess flux noise of superconducting quantum devices

Sebastian Kempf, Anna Ferring, David Uhrig, A. Fleischmann, C. Enss

Published Jan 1, 2016• 0 citations
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Related papers

Recent insights in low-frequency excess flux noise of superconducting quantum devices

Sebastian Kempf, Anna Ferring, David Uhrig +2 more

•Jan 1, 2017•0 citations

Towards noise engineering: Recent insights in low-frequency excess flux noise of superconducting quantum devices

Sebastian Kempf, Anna Ferring, C. Enss

The comprehensive analysis of low-frequency excess flux noise both in terms of magnetic flux noise SΦ,1/f and energy sensitivity ϵ1∕f of 84 superconducting quantum devices studied at temperatures below 1 K reveals a universal behavior. When analyzing data in terms of ϵ1∕f, we find that noise spectra of independent devices cross each other all at certain crossing frequencies fc. Besides this main result of our paper, we further show that superconducting quantum interference device (SQUID) arrays systematically feature higher noise exponents than single SQUIDs and give evidence for a material and device type dependence of low-frequency excess flux noise. The latter results facilitate to engineer the shape of magnetic flux noise spectra and thus to experimentally modify key properties such as coherence or measurement times of superconducting quantum devices.

Applied Physics Letters•Oct 17, 2016•7 citations

Origin of the Flux Noise in Superconducting Quantum Interference Devices

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Bulletin of the American Physical Society•Mar 3, 2014•0 citations

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Investigation and reduction of excess low-frequency noise in rf superconducting quantum interference devices

Michael Mück, Christoph Heiden, John L. Clarke

A detailed study has been made of the low-frequency excess noise of rf superconducting quantum interference devices (SQUIDs), fabricated from thin niobium films and operated at 4.2 K, with rf bias frequencies of 0.15, 1.7, and 3 GHz. When the SQUIDs were operated in an open-loop configuration in the absence of low-frequency flux modulation, the demodulated rf voltage exhibited a substantial level 1/f noise, which was essentially independent of the rf bias frequency. As the rf bias frequency was increased, the crossover frequency at which the 1/f noise power was equal to the white noise power moved to higher frequencies, because of the reduction in white noise. On the other hand, when the SQUID was flux modulated at 50 kHz and operated in a flux locked loop, no 1/f noise was observed at frequencies above 0.5 Hz. A detailed description of how the combination of rf bias and flux modulation removes 1/f noise due to critical current fluctuations is given. Thus, the results demonstrate that the 1/f noise observed in these SQUIDs is generated by critical current fluctuations, rather than by the hopping of flux vortices in the niobium films.

Journal of Applied Physics•May 1, 1994•26 citations

Investigation of Low-Frequency Excess Flux Noise in DC SQUIDs at mK Temperatures

D. Drung, J. Beyer, Jan-Hendrik Storm +2 more

The excess low-frequency flux noise in dc superconducting quantum interference devices (SQUIDs) operated at ultra-low temperatures was studied. A large number of single SQUIDs as well as SQUID arrays from 16 wafers fabricated over a period of six years were characterized at 4.2 K and1/fon the SQUID design or fabrication parameters. In contrast, below 4.2 K the low-frequency noise changed moderately or increased strongly depending on whether the bottom Nb or the insulation layer were fabricated in our newer sputter system instead of the older one. The corresponding excess noise levels ε1/fat1/f∝ f-αwith α typically around 0.6 for good devices. For devices with strong low-frequency excess noise, α increases up to about 0.9. The best energy resolution ε achieved so far with a 50 pH test SQUID operated at 16 mK is 0.62 h at 100 kHz, increasing to 1.64 h at 1 kHz and 14 h at 10 Hz.

IEEE Transactions on Applied Superconductivity•Nov 10, 2010•25 citations
The comprehensive analysis of low-frequency excess flux noise both in terms of magnetic flux noise SΦ,1/f and energy sensitivity ϵ1∕f of 84 superconducting quantum devices studied at temperatures below 1 K reveals a universal behavior. When analyzing data in terms of ϵ1∕f, we find that noise spectra of independent devices cross each other all at certain crossing frequencies fc. Besides this main result of our paper, we further show that superconducting quantum interference device (SQUID) arrays systematically feature higher noise exponents than single SQUIDs and give evidence for a material and device type dependence of low-frequency excess flux noise. The latter results facilitate to engineer the shape of magnetic flux noise spectra and thus to experimentally modify key properties such as coherence or measurement times of superconducting quantum devices.
A detailed study has been made of the low-frequency excess noise of rf superconducting quantum interference devices (SQUIDs), fabricated from thin niobium films and operated at 4.2 K, with rf bias frequencies of 0.15, 1.7, and 3 GHz. When the SQUIDs were operated in an open-loop configuration in the absence of low-frequency flux modulation, the demodulated rf voltage exhibited a substantial level 1/f noise, which was essentially independent of the rf bias frequency. As the rf bias frequency was increased, the crossover frequency at which the 1/f noise power was equal to the white noise power moved to higher frequencies, because of the reduction in white noise. On the other hand, when the SQUID was flux modulated at 50 kHz and operated in a flux locked loop, no 1/f noise was observed at frequencies above 0.5 Hz. A detailed description of how the combination of rf bias and flux modulation removes 1/f noise due to critical current fluctuations is given. Thus, the results demonstrate that the 1/f noise observed in these SQUIDs is generated by critical current fluctuations, rather than by the hopping of flux vortices in the niobium films.
The excess low-frequency flux noise in dc superconducting quantum interference devices (SQUIDs) operated at ultra-low temperatures was studied. A large number of single SQUIDs as well as SQUID arrays from 16 wafers fabricated over a period of six years were characterized at 4.2 K and1/fon the SQUID design or fabrication parameters. In contrast, below 4.2 K the low-frequency noise changed moderately or increased strongly depending on whether the bottom Nb or the insulation layer were fabricated in our newer sputter system instead of the older one. The corresponding excess noise levels ε1/fat1/f∝ f-αwith α typically around 0.6 for good devices. For devices with strong low-frequency excess noise, α increases up to about 0.9. The best energy resolution ε achieved so far with a 50 pH test SQUID operated at 16 mK is 0.62 h at 100 kHz, increasing to 1.64 h at 1 kHz and 14 h at 10 Hz.