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Bulletin of the American Physical Society

Origin of the Flux Noise in Superconducting Quantum Interference Devices

Hui Wang, Clare C. Yu, Ruqian Wu

Published Mar 3, 2014• 0 citations
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At temperatures below about 1 K, a series of dc superconducting quantum interference devices (SQUID’s) exhibited an apparent flux noise with a spectral density scaling as 1/f α, where 0.58<α<0.80. Typically, the magnitude of the noise increased as the temperature was lowered below 1 K, tending to flatten out at low temperatures with a value of 7±3 μΦ0Hz−1/2 at 1 Hz that was nearly independent of the parameters and materials of the SQUID’s. Although a large number of hypothetical sources of the noise have been eliminated, the origin remains unidentified.

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Superconducting Quantum Interference Devices (SQUIDs) are currently being used as flux qubits and read-out detectors in a variety of solid-state quantum computer architectures. The main limitation of SQUID qubits is that they have a coherence time of the order of 10 us, due to the presence of intrinsic flux noise that is not yet fully understood. The origin of flux noise is currently believed to be related to spin impurities present in the materials and interfaces that form the device. Here we present a novel numerical method that enables calculations of the flux produced by spin impurities even when they are located quite close to the SQUID wire. We show that the SQUID will be particularly sensitive to spins located at its wire edges, generating flux shifts of up to 4 nano flux quanta, much higher than previous calculations based on the software package FastHenry. This shows that spin impurities in a particular region along the wire's surface play a much more important role in producing flux noise than other spin impurities located elsewhere in the device.

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Bulletin of the American Physical Society•Mar 18, 2016•0 citations
At temperatures below about 1 K, a series of dc superconducting quantum interference devices (SQUID’s) exhibited an apparent flux noise with a spectral density scaling as 1/f α, where 0.58<α<0.80. Typically, the magnitude of the noise increased as the temperature was lowered below 1 K, tending to flatten out at low temperatures with a value of 7±3 μΦ0Hz−1/2 at 1 Hz that was nearly independent of the parameters and materials of the SQUID’s. Although a large number of hypothetical sources of the noise have been eliminated, the origin remains unidentified.
The origin of magnetic flux noise in superconducting quantum interference devices with a power spectrum scaling as 1/f (f is frequency) has been a puzzle for over 20 years. This noise limits the decoherence time of superconducting qubits. A consensus has emerged that the noise arises from fluctuating spins of localized electrons with an areal density of 5x10(17) m(-2). We show that, in the presence of potential disorder at the metal-insulator interface, some of the metal-induced gap states become localized and produce local moments. A modest level of disorder yields the observed areal density.
Superconducting Quantum Interference Devices (SQUIDs) are currently being used as flux qubits and read-out detectors in a variety of solid-state quantum computer architectures. The main limitation of SQUID qubits is that they have a coherence time of the order of 10 us, due to the presence of intrinsic flux noise that is not yet fully understood. The origin of flux noise is currently believed to be related to spin impurities present in the materials and interfaces that form the device. Here we present a novel numerical method that enables calculations of the flux produced by spin impurities even when they are located quite close to the SQUID wire. We show that the SQUID will be particularly sensitive to spins located at its wire edges, generating flux shifts of up to 4 nano flux quanta, much higher than previous calculations based on the software package FastHenry. This shows that spin impurities in a particular region along the wire's surface play a much more important role in producing flux noise than other spin impurities located elsewhere in the device.