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Multilayer ion trap technology for scalable quantum computing and quantum simulation

A. Bautista-Salvador, Giorgio Zarantonello, H. Hahn, A Preciado-Grijalva, Jonathan Morgner, M. Wahnschaffe, C. Ospelkaus

Published Jan 1, 2019• 22 citations
Publisher

Abstract

We present a novel ion trap fabrication method enabling the realization of multilayer ion traps scalable to an in principle arbitrary number of metal-dielectric levels. We benchmark our method by fabricating a multilayer ion trap with integrated three-dimensional microwave circuitry. We demonstrate ion trapping and microwave control of the hyperfine states of a laser cooled 9Be+ ion held at a distance of 35 above the trap surface. This method can be used to implement large-scale ion trap arrays for scalable quantum information processing and quantum simulation.

DOI
10.15488/10409

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Microfabricated ion traps are an important tool in the development of scalable quantum systems. Tremendous advancements towards an ion quantum computer were made in the past decade and most requirements for a quantum computer have been fulfilled in individual experiments. Incorporating all essential capabilities in a fully scalable system will require the further advancement of established quantum information technologies and development of new trap fabrication techniques. In my thesis I will discuss the theoretical background and experimental setup required for the operation of ion traps. Measurement of the important ion trap heating rate was performed in the setup and I will discuss the results in more detail. I will give a review of microfabrication processes used for the fabrication of traps, outlining advantages, disadvantages and issues inherent to the processes. Following the review I will present my work on a concept for a scalable ion trap quantum system based on microwave quantum gates and shuttling through X-junctions. Many of the required building blocks, including ion trap structures with current-carrying wires intended to create strong magnetic field gradients for microwave gates were investigated further. A novel fabrication process was developed to combine current-carrying wires with advanced multilayered ion trap structures. Several trap designs intended for proof of principle experiments of high fidelity microwave gates, advanced detection techniques and shuttling between electrically disconnected ion traps will be presented. Also the electrode geometry of an optimized X-junction design with strongly suppressed rf barrier height will be presented. Further, I developed several modifications for the experimental setup to extend the existing capabilities. A plasma source capable of performing in-situ cleans of the trap electrode surfaces, which has been demonstrated to dramatically reduce the heating rate in ion traps, was incorporated. I will also present a vacuum system modification designed to cool ion traps with current-carrying wires and transport the generated heat out of the vacuum system. In addition a novel low-noise, high-speed, multichannel voltage control system was developed by me. The device can be used in future experiments to precisely shuttle ions from one trapping zone to another and also to shuttle ions through ion trap junctions. Lastly I will outline the process optimization and microfabrication of my ion trap designs. A novel fabrication process which makes use of the extremely high thermal conductivity of diamond substrates and combines it with thick copper tracks embedded in the substrate was developed. Large currents will be passed through the wires creating a strong and controllable magnetic field gradient. Ion trap designs with isolated electrodes connected via buried wires can be placed on top of the current-carrying wires, allowing the most advanced electrode designs to be fabricated with current-carrying wires.

•May 18, 2015•0 citations
We present a novel ion trap fabrication method enabling the realization of multilayer ion traps scalable to an in principle arbitrary number of metal-dielectric levels. We benchmark our method by fabricating a multilayer ion trap with integrated three-dimensional microwave circuitry. We demonstrate ion trapping and microwave control of the hyperfine states of a laser cooled 9Be+ ion held at a distance of 35 above the trap surface. This method can be used to implement large-scale ion trap arrays for scalable quantum information processing and quantum simulation.
We present a novel ion trap fabrication method enabling the realization of multilayer ion traps scalable to an in principle arbitrary number of metal-dielectric levels. We benchmark our method by fabricating a multilayer ion trap with integrated three-dimensional microwave circuitry. We demonstrate ion trapping and microwave control of the hyperfine states of a laser cooled 9 Be + ion held at a distance of 35 above the trap surface. This method can be used to implement large-scale ion trap arrays for scalable quantum information processing and quantum simulation.
The major challenges in trapped-ion quantum computation are to scale up few-ion experiments to many qubits and to improve control techniques so that quantum logic gates can be carried out with higher fidelities. This thesis reports experimental progress in both of these areas. In the early part of the thesis we describe the fabrication of a surface-electrode ion trap, the development of the apparatus and techniques required to operate it and the successful trapping of 40Ca+ ions. Notably we developed methods to control the orientation of the principal axes and to minimise ion micromotion. We propose a repumping scheme that simplifies heating rate measurements for ions with low-lying D levels, and use it to characterise the electric field noise in the trap. Surface-electrode traps are important because they offer a route to dense integration of electronic and optical control elements using existing microfabrication technology. We explore this scaling route by testing a series of three traps that were microfabricated at Sandia National Laboratories. Investigations of micromotion and charging of the surface by laser beams were carried out and improvements to future traps are suggested. Using one of these traps we also investigated anomalous electrical noise from the electrode surfaces and discovered that it can be reduced by cleaning with a pulsed laser. A factor of two decrease was observed; this represents the first in situ removal of this noise source, an important step towards higher gate fidelities. In the second half of the thesis we describe the design and construction of an experiment for the purpose of replacing laser-driven multi-qubit quantum logic gates with microwave-driven ones. We investigate magnetic-field-independent hyperfine qubits in 40Ca+ as suitable qubits for this scheme. We make a design study of how best to integrate an ion trap with the microwave conductors required to implement the gate and propose a novel integrated resonant structure. The trap was fabricated and ions were successfully loaded. Single-qubit experiments show that the microwave fields above the trap are in excellent agreement with software simulations. There are good prospects for demonstrating a multi-qubit gate in the near future. We conclude by discussing the possibilities for larger-scale quantum computation by combining microfabricated traps and microwave control.
The electromagnetic confinement of atomic ions has provided a useful testbed for many different applications in atomic physics, including laser cooling {1}, mass spectrometry {2}, and precision control of nearly-pure quantum states {3}. Recently, ion traps have been effectively applied to the growing field of quantum computation {4}, where the ability to isolate a single ion from its environment has made it an attractive architecture for a large-scale quantum information processor {5, 6, 7}. While many of the fundamental quantum computing building blocks have been demonstrated with trapped ions {8}, the technology for scaling to large numbers of ion quantum bits (qubits) is just beginning to develop. In this paper, we describe an important milestone on this path with the successful operation of an ion trap fabricated on an integrated gallium arsenide (GaAs) heterostructure, which could in principal scale to host a large array of ions.
We describe the design, fabrication, and testing of a surface-electrode ion trap, which incorporates microwave waveguides, resonators, and coupling elements for the manipulation of trapped ion qubits using near-field microwaves. The trap is optimised to give a large microwave field gradient to allow state-dependent manipulation of the ions' motional degrees of freedom, the key to multi-qubit entanglement. The microwave field near the centre of the trap is characterised by driving hyperfine transitions in a single laser-cooled 43Ca+ ion.
Multilayer surface-electrode ion traps provide a scalable platform for quantum processors. In this paper we present a demonstrator chip designed to implement an 8-qubit shuttling-based quantum processor with chip-integrated microwave control for quantum gates. The design is based on a linear Paul trap geometry. All-to-all connectivity will be implemented through ion swapping. The production of the trap chip is carried out with multistep microfabrication. The 2-layer ion trap chip with two storage registers and an interaction zone has a size of 5 mm x 10 mm . Flexibility in signal routing is improved through the use of thick and planarised metal–dielectric layers. • Fabrication of multilayer asymmetric ion trap chip aiming to enable an 8-qubit quantum computer. • Brief insight into the linear trap chip design with quantum charged-coupled device architecture. • Wafer level multistep microfabrication procedure of the chip production. • Chip characterisation with respect to the target design features and trapping readiness.
Microfabricated ion traps are an important tool in the development of scalable quantum systems. Tremendous advancements towards an ion quantum computer were made in the past decade and most requirements for a quantum computer have been fulfilled in individual experiments. Incorporating all essential capabilities in a fully scalable system will require the further advancement of established quantum information technologies and development of new trap fabrication techniques. In my thesis I will discuss the theoretical background and experimental setup required for the operation of ion traps. Measurement of the important ion trap heating rate was performed in the setup and I will discuss the results in more detail. I will give a review of microfabrication processes used for the fabrication of traps, outlining advantages, disadvantages and issues inherent to the processes. Following the review I will present my work on a concept for a scalable ion trap quantum system based on microwave quantum gates and shuttling through X-junctions. Many of the required building blocks, including ion trap structures with current-carrying wires intended to create strong magnetic field gradients for microwave gates were investigated further. A novel fabrication process was developed to combine current-carrying wires with advanced multilayered ion trap structures. Several trap designs intended for proof of principle experiments of high fidelity microwave gates, advanced detection techniques and shuttling between electrically disconnected ion traps will be presented. Also the electrode geometry of an optimized X-junction design with strongly suppressed rf barrier height will be presented. Further, I developed several modifications for the experimental setup to extend the existing capabilities. A plasma source capable of performing in-situ cleans of the trap electrode surfaces, which has been demonstrated to dramatically reduce the heating rate in ion traps, was incorporated. I will also present a vacuum system modification designed to cool ion traps with current-carrying wires and transport the generated heat out of the vacuum system. In addition a novel low-noise, high-speed, multichannel voltage control system was developed by me. The device can be used in future experiments to precisely shuttle ions from one trapping zone to another and also to shuttle ions through ion trap junctions. Lastly I will outline the process optimization and microfabrication of my ion trap designs. A novel fabrication process which makes use of the extremely high thermal conductivity of diamond substrates and combines it with thick copper tracks embedded in the substrate was developed. Large currents will be passed through the wires creating a strong and controllable magnetic field gradient. Ion trap designs with isolated electrodes connected via buried wires can be placed on top of the current-carrying wires, allowing the most advanced electrode designs to be fabricated with current-carrying wires.