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Charge qubit entanglement in double quantum dots

S. Weiss, Michael Thorwart, R. Egger

Published Jan 1, 2006• 10 citations
OpenAlex

Abstract

PACS. 73.23.-b – Electronic transport in mesoscopic systems. Abstract. – We study entanglement of charge qubits in a vertical tunnel-coupled double quantum dot containing two interacting electrons. Exact diagonalization is used to compute the negativity characterizing entanglement. We find that entanglement can be efficiently generated and controlled by sidegate voltages, and describe how it can be detected. For large enough tunnel coupling, the negativity shows a pronounced maximum at an intermediate interaction strength within the Wigner molecule regime. Semiconductor few-electron quantum dots (QDs) continue to attract a lot of interest, as it has now become possible to experimentally control both the electronic spin and charge in a condensed-phase environment in an unprecedented manner. In particular, double quantum dots (DQDs) can be fabricated in a well-controlled fashion in high-quality semiconductor devices, and are currently under intense study [1–9]. Vertical or lateral tunnel-coupled DQDs are among the most promising candidates for realizing spin or charge qubits in a quantum information processor [10–12]. Their main advantages are scalability, good control of physical properties via tunable external (sidegate-) voltages or magnetic fields, and spatial separation

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PACS. 73.23.-b – Electronic transport in mesoscopic systems. Abstract. – We study entanglement of charge qubits in a vertical tunnel-coupled double quantum dot containing two interacting electrons. Exact diagonalization is used to compute the negativity characterizing entanglement. We find that entanglement can be efficiently generated and controlled by sidegate voltages, and describe how it can be detected. For large enough tunnel coupling, the negativity shows a pronounced maximum at an intermediate interaction strength within the Wigner molecule regime. Semiconductor few-electron quantum dots (QDs) continue to attract a lot of interest, as it has now become possible to experimentally control both the electronic spin and charge in a condensed-phase environment in an unprecedented manner. In particular, double quantum dots (DQDs) can be fabricated in a well-controlled fashion in high-quality semiconductor devices, and are currently under intense study [1–9]. Vertical or lateral tunnel-coupled DQDs are among the most promising candidates for realizing spin or charge qubits in a quantum information processor [10–12]. Their main advantages are scalability, good control of physical properties via tunable external (sidegate-) voltages or magnetic fields, and spatial separation
Quantum information and quantum computation implementation in terms of electron charges and spin has attracted tremendous attention for the development of large-scale quantum information processing [1-5]. Artificial and tunable charge qubits fabricated in a semiconductor nanostructure are suitable for the purpose, since various parameters can be controlled by external gate voltages [6,7]. The rapid control of external gate voltage in two-electron double quantum dots has been demonstrated [8,9].Entanglement has recently emerged as a significant resource in quantum information and other applications. However an important problem is to ensure the robustness of this resource; that is, the ability to maintain it against decay. Decoherence is one of the fundamental limitation in quantum information science, and the understanding and the control of its dynamics appears as a crucial issue for the development of quantum information devices.For charge qubits in quantum dots, the effects of phonons and electromagnetic and background charge fluctuations are important in the decoherence process. The effect of phonons on the dynamics of two charge qubits has been examined [10,11].In this work, we analyze the effect of telegraph noise on the dynamical of two electrons in laterally coupled quantum dots. The resulting qubit is supposed to evolve in the basis spanned by the states |0〉 and |1〉 which describe the electron localized in the left and right dot respectively. We investigate theoretically the quantum dynamics of two interacting electrons driven by an oscillatory electric field. In order to study the effect of the telegraph noise on the entanglement we adopt the concurrence.
We report on our recent progress in applying semiconductor quantum dots for spin-based quantum computation, as proposed by Loss and DiVincenzo (1998 Phys. Rev. A 57 120). For the purpose of single-electron spin resonance, we study different types of single quantum dot devices that are designed for the generation of a local ac magnetic field in the vicinity of the dot. We observe photon-assisted tunnelling as well as pumping due to the ac voltage induced by the ac current driven through a wire in the vicinity of the dot, but no evidence for ESR so far. Analogue concepts for a double quantum dot and the hydrogen molecule are discussed in detail. Our experimental results in laterally coupled vertical double quantum dot device show that the Heitler–London model forms a good approximation of the two-electron wavefunction. The exchange coupling constant J is estimated. The relevance of this system for two-qubit gates, in particular the SWAP operation, is discussed. Density functional calculations reveal the importance of the gate electrode geometry in lateral quantum dots for the tunability of J in realistic two-qubit gates.
We investigate the electronic transport through two parallel double quantum dots coupled both capacitively and via a perpendicularly aligned charge qubit. The presence of the qubit leads to a modification of the coherent tunnel amplitudes of each double quantum dot. We study the influence of the qubit on the electronic steady-state currents through the system, the entanglement between the transport double quantum dots, and the back-action on the charge qubit. We use a Born-Markov secular quantum master equation for the system. The obtained currents show signatures of the qubit. The stationary qubit state may be tuned and even rendered pure by applying suitable voltages. In the Coulomb diamonds, it is also possible to stabilize pure entangled states of the transport double quantum dots.
A GaAs∕AlGaAs\mathrm{Ga}\mathrm{As}∕\mathrm{Al}\mathrm{Ga}\mathrm{As}GaAs∕AlGaAs based two-qubit quantum device that allows the controlled generation and straightforward detection of entanglement by measuring a stationary current-voltage characteristics is proposed. We have developed a two-particle Green's function method of open systems and calculate the properties of three-dimensional interacting entangled systems nonperturbatively. We present concrete device designs and detailed charge-self-consistent predictions. One of the qubits is an all-electric Mach-Zehnder interferometer that consists of two electrostatically defined quantum wires with coupling windows, whereas the second qubit is an electrostatically defined double quantum dot located in a second two-dimensional electron gas beneath the quantum wires. We find that the entanglement of the device can be controlled externally by tuning the tunneling coupling between the two quantum dots.