Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

arXiv:1204.2978 · Physical Review B

Dynamics of interacting transport qubits

Christian Nietner, Gernot Schaller, Christina Pöltl, Tobias Brandes

Published Jun 15, 2012• 7 citations
arXivHTMLPDF

Abstract

We investigate the electronic transport through two parallel double quantum dots coupled both capacitively and via a perpendicularly aligned charge qubit. The presence of the qubit leads to a modification of the coherent tunnel amplitudes of each double quantum dot. We study the influence of the qubit on the electronic steady-state currents through the system, the entanglement between the transport double quantum dots, and the back-action on the charge qubit. We use a Born-Markov secular quantum master equation for the system. The obtained currents show signatures of the qubit. The stationary qubit state may be tuned and even rendered pure by applying suitable voltages. In the Coulomb diamonds, it is also possible to stabilize pure entangled states of the transport double quantum dots.

DOI
10.1103/physrevb.85.245431

Related papers

Time-dependent single-electron transport through quantum dots

T. Fujisawa, T. Hayashi, Satoshi Sasaki

We describe time-dependent single-electron transport through quantum dots in the Coulomb blockade regime. Coherent dynamics of a single charge qubit in a double quantum dot is discussed with full one-qubit manipulation. Strength of decoherence is controlled with the applied voltage, but uncontrolled decoherence arises from electron–phonon coupling and background fluctuations. Then energy-relaxation dynamics is discussed for orbital and spin degree of freedom in a quantum dot. The electron–phonon interaction and spin–orbit coupling can be investigated as the dissipation problem. Finally, charge detection measurement is presented for statistical analysis of single-electron tunnelling transitions and for a sensitive qubit read-out device.

Reports on Progress in Physics•Feb 20, 2006•111 citations

Charge qubit entanglement in double quantum dots

S. Weiss, Michael Thorwart, R. Egger

PACS. 73.23.-b – Electronic transport in mesoscopic systems. Abstract. – We study entanglement of charge qubits in a vertical tunnel-coupled double quantum dot containing two interacting electrons. Exact diagonalization is used to compute the negativity characterizing entanglement. We find that entanglement can be efficiently generated and controlled by sidegate voltages, and describe how it can be detected. For large enough tunnel coupling, the negativity shows a pronounced maximum at an intermediate interaction strength within the Wigner molecule regime. Semiconductor few-electron quantum dots (QDs) continue to attract a lot of interest, as it has now become possible to experimentally control both the electronic spin and charge in a condensed-phase environment in an unprecedented manner. In particular, double quantum dots (DQDs) can be fabricated in a well-controlled fashion in high-quality semiconductor devices, and are currently under intense study [1–9]. Vertical or lateral tunnel-coupled DQDs are among the most promising candidates for realizing spin or charge qubits in a quantum information processor [10–12]. Their main advantages are scalability, good control of physical properties via tunable external (sidegate-) voltages or magnetic fields, and spatial separation

•Jan 1, 2006•10 citations

Correlated Coherent Oscillations in Coupled Semiconductor Charge Qubits

Gou Shinkai, T. Hayashi, Takeshi Ota +1 more

We study coherent dynamics of two spatially separated electrons in a coupled semiconductor double quantum dot (DQD). Coherent oscillations in one DQD are strongly influenced by electronic states of the other DQD, or the two electrons simultaneously tunnel in a correlated manner. The observed coherent oscillations are interpreted as various two-qubit operations. The results encourage searching quantum entanglement in electronic devices.

arXiv:0905.0805•Physical Review Letters•Jul 28, 2009•167 citations

Quantum gates between capacitively coupled double quantum dot two-spin qubits

Dimitrije Stepanenko, Guido Burkard

We study the two-qubit controlled-NOT gate operating on qubits encoded in the spin state of a pair of electrons in a double quantum dot. We assume that the electrons can tunnel between the two quantum dots encoding a single qubit, while tunneling between the quantum dots that belong to different qubits is forbidden. Therefore, the two qubits interact exclusively through the direct Coulomb repulsion of the electrons. We find that entangling two-qubit gates can be performed by the electrical biasing of quantum dots and/or tuning of the tunneling matrix elements between the quantum dots within the qubits. The entangling interaction can be controlled by tuning the bias through the resonance between the singly occupied and doubly occupied singlet ground states of a double quantum dot.

arXiv:cond-mat/0610377•Physical Review B•Feb 27, 2007•57 citations

Nonequilibrium entanglement and noise in coupled qubits

Neill Lambert, Ramón Aguado, Tobias Brandes

We study the charge entanglement and noise spectrum of two Coulomb-coupled double quantum dots under stationary nonequilibrium transport conditions. In the transport regime, the entanglement exhibits a clear switching threshold and various limits due to suppression of tunneling by quantum Zeno localization or by an interaction-induced energy gap. We also discuss the interdot current correlation as a possible indicator of the entanglement in transport experiments.

arXiv:cond-mat/0602063•Physical Review B•Jan 26, 2007•78 citations

Measuring the entanglement between double quantum dot charge qubits

Clive Emary

We present a scheme for creating and measuring entanglement between two double quantum dot charge qubits in a transport setup in which voltage pulses can modify system parameters. Detection of entanglement is performed via the construction of a Bell inequality with current correlation measurements. An essential feature is the use of the internal dynamics of the qubits as the constituent electrons tunnel into the leads to give the single-particle rotations necessary for the Bell measurement.

arXiv:0905.2269•Physical Review B•Oct 22, 2009•17 citations
We investigate the electronic transport through two parallel double quantum dots coupled both capacitively and via a perpendicularly aligned charge qubit. The presence of the qubit leads to a modification of the coherent tunnel amplitudes of each double quantum dot. We study the influence of the qubit on the electronic steady-state currents through the system, the entanglement between the transport double quantum dots, and the back-action on the charge qubit. We use a Born-Markov secular quantum master equation for the system. The obtained currents show signatures of the qubit. The stationary qubit state may be tuned and even rendered pure by applying suitable voltages. In the Coulomb diamonds, it is also possible to stabilize pure entangled states of the transport double quantum dots.
We describe time-dependent single-electron transport through quantum dots in the Coulomb blockade regime. Coherent dynamics of a single charge qubit in a double quantum dot is discussed with full one-qubit manipulation. Strength of decoherence is controlled with the applied voltage, but uncontrolled decoherence arises from electron–phonon coupling and background fluctuations. Then energy-relaxation dynamics is discussed for orbital and spin degree of freedom in a quantum dot. The electron–phonon interaction and spin–orbit coupling can be investigated as the dissipation problem. Finally, charge detection measurement is presented for statistical analysis of single-electron tunnelling transitions and for a sensitive qubit read-out device.
PACS. 73.23.-b – Electronic transport in mesoscopic systems. Abstract. – We study entanglement of charge qubits in a vertical tunnel-coupled double quantum dot containing two interacting electrons. Exact diagonalization is used to compute the negativity characterizing entanglement. We find that entanglement can be efficiently generated and controlled by sidegate voltages, and describe how it can be detected. For large enough tunnel coupling, the negativity shows a pronounced maximum at an intermediate interaction strength within the Wigner molecule regime. Semiconductor few-electron quantum dots (QDs) continue to attract a lot of interest, as it has now become possible to experimentally control both the electronic spin and charge in a condensed-phase environment in an unprecedented manner. In particular, double quantum dots (DQDs) can be fabricated in a well-controlled fashion in high-quality semiconductor devices, and are currently under intense study [1–9]. Vertical or lateral tunnel-coupled DQDs are among the most promising candidates for realizing spin or charge qubits in a quantum information processor [10–12]. Their main advantages are scalability, good control of physical properties via tunable external (sidegate-) voltages or magnetic fields, and spatial separation
We study the two-qubit controlled-NOT gate operating on qubits encoded in the spin state of a pair of electrons in a double quantum dot. We assume that the electrons can tunnel between the two quantum dots encoding a single qubit, while tunneling between the quantum dots that belong to different qubits is forbidden. Therefore, the two qubits interact exclusively through the direct Coulomb repulsion of the electrons. We find that entangling two-qubit gates can be performed by the electrical biasing of quantum dots and/or tuning of the tunneling matrix elements between the quantum dots within the qubits. The entangling interaction can be controlled by tuning the bias through the resonance between the singly occupied and doubly occupied singlet ground states of a double quantum dot.