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Single photo-electron trapping, storage, and detection in a one-electron quantum dot

Rao, D S, Szkopek, T, Hans D. Robinson, Yablonovitch, E B, H. W. Jiang

Published Oct 13, 2004• 20 citations
OpenAlex

Abstract

There has been considerable progress in electro-statically emptying, and re-filling, quantum dots with individual electrons. Typically the quantum dot is defined by electrostatic gates on a GaAs/AlGaAs modulation doped heterostructure. We report the filling of such a quantum dot by a single photo-electron, originating from an individual photon. The electrostatic dot can be emptied and reset in a controlled fashion before the arrival of each photon. The trapped photo-electron is detected by a point contact transistor integrated adjacent to the electrostatic potential trap. Each stored photo-electron causes a persistent negative step in the transistor channel current. Such a controllable, benign, single photo-electron detector could allow for information transfer between flying photon qubits and stored electron qubits.

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There has been considerable progress in electro-statically emptying, and re-filling, quantum dots with individual electrons. Typically the quantum dot is defined by electrostatic gates on a GaAs/AlGaAs modulation doped heterostructure. We report the filling of such a quantum dot by a single photo-electron, originating from an individual photon. The electrostatic dot can be emptied and reset in a controlled fashion before the arrival of each photon. The trapped photo-electron is detected by a point contact transistor integrated adjacent to the electrostatic potential trap. Each stored photo-electron causes a persistent negative step in the transistor channel current. Such a controllable, benign, single photo-electron detector could allow for information transfer between flying photon qubits and stored electron qubits.
There has been considerable progress in electrostatically emptying, and refilling, quantum dots with individual electrons. Typically the quantum dot is defined by electrostatic gates on a GaAs∕AlyGa1−yAs modulation-doped heterostructure. We report the filling of such a quantum dot by a single photoelectron, originating from an individual photon. The electrostatic dot can be emptied and reset in a controlled fashion before the arrival of each photon. The trapped photoelectron is detected by a point contact transistor integrated adjacent to the electrostatic potential trap. Each stored photoelectron causes a persistent negative step in the transistor channel current. Such a controllable, benign, single photoelectron detector could allow for information transfer between flying photon qubits and stored electron qubits.
We demonstrate single-shot detection of single electrons generated by single photons using an electrically tunable quantum dot and a quantum point contact charge detector. By tuning the quantum dot in a Coulomb blockade before the photoexcitation, we observe the trapping and subsequent resetting of single photogenerated electrons. The photogenerated electrons can be stored in the dot for a tunable time range from shorter to longer than the spin-flip time T1. We combine this trap-reset technique with spin-dependent tunneling under magnetic fields to observe the spin-dependent photon detection within the T1.
Quantum information can be stored and manipulated by an electron spin if its state was faithfully transferred from messenger photon qubit. Such a quantum state transfer needs to have a function of conversion from photon polarization to electron spin state and flagging the safe conversion without destroying the spin state. We have achieved single photon response by using a quantum dot as an electron trap and a quantum point contact as a charge sensor on GaAs/AlGaAs-based modulation doped structure. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
In this article, we studied the effect of a single charge trap on the charge stability diagram of a quantum dot-based single electron transistor. The anomalies in the Coulomb characteristic diagram of the quantum dot, system energy, occupation probabilities, and conductivity of the quantum dot have been investigated. These anomalies are caused by the electrostatic interaction of the quantum dot with the charge trap. The trap is capacitively connected to the quantum dot and can be empty or occupied by an electron; considering a few quantum states of the system, we solved the master equation using Fermi's golden rule to obtain the tunneling rates and the matrix of tunneling coefficients. Then, calculating the inverse of the matrix of coefficients, the probability of each quantum state has been obtained. Validation of the analysis is performed by comparing the simulation results with the experimental data. Finally, we have demonstrated that our study provides a tool to detect the charge presence in a trap near a quantum dot, which can potentially be used for the readout of quantum gates.
Low-noise single-photon detectors that can resolve photon numbers are used to monitor the operation of quantum gates in linear-optical quantum computation. Exactly 0, 1 or 2 photons registered in a detector should be distinguished especially in long-distance quantum communication and quantum computation. Here we demonstrate a photon-number-resolving detector based on quantum dot coupled resonant tunneling diodes (QD-cRTD). Individual quantum-dots (QDs) coupled closely with adjacent quantum well (QW) of resonant tunneling diode operate as photon-gated switches- which turn on (off) the RTD tunneling current when they trap photon-generated holes (recombine with injected electrons). Proposed electron-injecting operation fills electrons into coupled QDs which turn "photon-switches" to "OFF" state and make the detector ready for multiple-photons detection. With proper decision regions defined, 1-photon and 2-photon states are resolved in 4.2 K with excellent propabilities of accuracy of 90% and 98% respectively. Further, by identifying step-like photon responses, the photon-number-resolving capability is sustained to 77 K, making the detector a promising candidate for advanced quantum information applications where photon-number-states should be accurately distinguished.