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Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics

Single photon response in GaAs quantum transport devices for photon‐spin quantum state transfer

Takeshi Kutsuwa, K. Arai, H. Shigyo, H. Kinjo, Keiji Ono, Yasuyoshi Mitsumori, Hideo Kosaka, Keiichi Edamatsu

Published Dec 1, 2006• 0 citations
Publisher

Abstract

Quantum information can be stored and manipulated by an electron spin if its state was faithfully transferred from messenger photon qubit. Such a quantum state transfer needs to have a function of conversion from photon polarization to electron spin state and flagging the safe conversion without destroying the spin state. We have achieved single photon response by using a quantum dot as an electron trap and a quantum point contact as a charge sensor on GaAs/AlGaAs-based modulation doped structure. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

DOI
10.1002/pssc.200672861

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Quantum information can be stored and manipulated by an electron spin if its state was faithfully transferred from messenger photon qubit. Such a quantum state transfer needs to have a function of conversion from photon polarization to electron spin state and flagging the safe conversion without destroying the spin state. We have achieved single photon response by using a quantum dot as an electron trap and a quantum point contact as a charge sensor on GaAs/AlGaAs-based modulation doped structure. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
There has been considerable progress in electro-statically emptying, and re-filling, quantum dots with individual electrons. Typically the quantum dot is defined by electrostatic gates on a GaAs/AlGaAs modulation doped heterostructure. We report the filling of such a quantum dot by a single photo-electron, originating from an individual photon. The electrostatic dot can be emptied and reset in a controlled fashion before the arrival of each photon. The trapped photo-electron is detected by a point contact transistor integrated adjacent to the electrostatic potential trap. Each stored photo-electron causes a persistent negative step in the transistor channel current. Such a controllable, benign, single photo-electron detector could allow for information transfer between flying photon qubits and stored electron qubits.
Spin is a quantum property of electrons. For spin‐based quantum information technology, preparation and read‐out of the electron spin state should be spin coherent. We demonstrate that the polarization coherence of light can be transferred to the spin coherence of electrons in a semiconductor quantum nanostructure, and the prepared coherence of the electron spin can also be read out with light by the developed tomographic Kerr rotation method. We also demonstrate that a single photon is efficiently converted (∼27%) into a single electron trapped in a gate‐defined quantum dot, where the g‐factor of electrons is tuned to zero, and the charge state is detected with an adjacent quantum point contact without destructing the spin state. We further demonstrate that the spin coherence of a single electron trapped in one of double quantum dots is electrically manipulated with a microwave applied to the gate and read out via the Pauli spin blockade phenomenon. All of these functions are needed to build all semiconductor quantum repeaters and distributed quantum computers.
Connecting quantum processors over long distances using photon qubits would enable more complex quantum computing architectures and quantum networks. Recently a protocol to transfer a quantum state from a photonic qubit to a singlet-triplet spin qubit in GaAs/AlGaAs heterostructure has been theoretically demonstrated. In practice, the coherent transfer is facilitated by a hybrid device where a GaAs/AlGaAs gate-defined quantum dot (GDQD) is tunnel coupled to a self-assembled quantum dot (SAQD), in which a conversion between a photon state and a spin state takes place. This work addressed the three requirements of the optical-interface devices based on tunnel coupling between the GDQD and the SAQD: (i) a properly designed GaAs/AlGaAs heterostructure where the two-dimensional electron gas (2DEG) can be electrically tuned into resonance with the InAs SAQD; (ii) high-mobility 2DEG to form and operate a GDQD; (iii) precise alignment between the SAQD and the GDQD. It is proven that the InAs SAQD can be tuned to be charged, discharged, and resonant with the 2DEG by applying a local electric field.
Spin is a quantum property of electrons. For spin-based quantum information technology, preparation and read-out of the electron spin state should be spin coherent. We demonstrate that the polarization coher ence of light can be transferred to the spin coherence of electrons in a semiconductor quantum nanostructure [1], and the prepared coherence of the electron spin can also be read out with light by the developed tomographic Kerr rotation method [2]. We also demonstrate that a single photon is efficiently converted (~27%) into a single electron trapped in a gate-defined quantum dot, where the g-factor of electrons is tuned to zero, and the charge state is detected with an adjacent quantum point contact without destructing the spin state [3]. We further demonstrate that the spin coherence of a single electron trapped in one of double quantum dots is electrically manipulated with a microwave applied to the gate and read out via the Pauli spin blockade phenomenon [4]. These demonstrations were carried out in a condition where the up/down spin basis states of electrons remain ed degenerated under an in-plain magnetic field. As this condition ensures the energy conservation between photons and electrons, the entire Poincare sphere representing polarization states of photons can be mapped onto the Bloch sphere representing spin polar ization states of electrons. We theoretically showed that relative spin coherence of two electrons can be also measured with the help of spin-flip tunneling of electrons between the dots [5]. Full Bell state measurement is also possible by the single -spin manipulation and Pauli spin blockade [6]. All of these functions are needed to build all semiconductor quantum repeaters and distributed quantum computers.
There has been considerable progress in electrostatically emptying, and refilling, quantum dots with individual electrons. Typically the quantum dot is defined by electrostatic gates on a GaAs∕AlyGa1−yAs modulation-doped heterostructure. We report the filling of such a quantum dot by a single photoelectron, originating from an individual photon. The electrostatic dot can be emptied and reset in a controlled fashion before the arrival of each photon. The trapped photoelectron is detected by a point contact transistor integrated adjacent to the electrostatic potential trap. Each stored photoelectron causes a persistent negative step in the transistor channel current. Such a controllable, benign, single photoelectron detector could allow for information transfer between flying photon qubits and stored electron qubits.