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Proximity effect in superconducting Hot-Electron Bolometers

Axel Stockhausen, K. Ilin, M. Siegel, A. Yu. Semenov, A. V. Smirnov, Heinz‐Wilhelm Hübers, R. Schneider, Dagmar Gerthsen

Published Jan 1, 2008• 0 citations
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We present a model for the description of the resistive transition in hot-electron bolometer mixers. We show that the transition is a property of a superconducting microbridge connected to normal conducting cooling pads. Using the concepts of the superconducting proximity effect, charge-imbalance generation, and Andreev reflection, we have calculated the resistance versus temperature of the device and demonstrate its dependence on the length of the microbridge, both theoretically and experimentally. The analysis reopens the question of the relationship between the resistive transition and the situation in which the device is optimally operated as a heterodyne mixer.
To expand the intermediate frequency (IF) band and improve the sensitivity of a hot-electron bolometer mixer (HEBM), we proposed and examined a new HEBM structure using a magnetic thin film. We found that it was possible to suppress the superconductivity of the 5-nm-thick niobium nitride (NbN) thin film by the addition of a 1.8-nm-thick nickel (Ni) thin film. It was also confirmed that the superconductivity disappeared in the Au (70 nm)/Ni (1.8 nm)/NbN (5 nm) trilayer for forming the electrodes of the HEBM. By using the magnetic thin film for the electrodes, we suggested that the superconductivity of the HEBM strip would be affected and that hot spots would be formed near the electrodes. This approach is effective for shortening the hot-electron drift length and will lead to the expansion of the IF bandwidth. We think that the new structure lowers the required local oscillator power and improves the HEBM sensitivity by suppressing the proximity effect under the electrode. The IF bandwidth of the fabricated Ni-HEBMs was evaluated at 1.9 THz. We confirmed that the IF bandwidth expands, and the evaluated bandwidths were in the range of 5.1-5.7 GHz at 4 K. Ni-HEBMs with 0.1-μm strip length were also fabricated and evaluated. The IF bandwidth was about 6.9 GHz at 4 K.
We present a study of the resistive behavior of hot-electron bolometers in two different regimes. At bath temperatures near the critical temperature and under the condition of a low current density, the behavior can be understood in terms of charge-imbalance, Andreev reflection, and the superconducting proximity effect. At lower temperatures, a high current density and the application of LO power result in the formation of a resistive electronic hotspot. We propose to interpret heterodyne downconversion as the result of the length oscillation of the hotspot at the intermediate frequency.