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Suppression of Mott-Hubbard states and metal-insulator transitions in the two-band Hubbard model

Hague, J. P.

Published Jan 1, 2005• 1 citation
OpenAlex

Abstract

I investigate band and Mott insulating states in a two-band Hubbard model, with the aim of understanding the differences between the idealised one-orbital model and the more realistic multi-band case. Using a projection ansatz I show that additional orbitals suppress the metal-insulator transition, leading to a critical coupling of approximately eight times the bare band-width. I also demonstrate the effects of orbital ordering, which hinder Mott-Hubbard states and open a band gap. Since multi-band correlations are common in real materials, this work suggests that the existence of very strongly correlated band insulators may be more common than Mott-Hubbard insulators.

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Suppression of Mott–Hubbard states and metal–insulator transitions in the two-band Hubbard model

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I investigate band and Mott insulating states in a two-band Hubbard model, with the aim of understanding the differences between the idealised one-orbital model and the more realistic multi-band case. Using a projection ansatz I show that additional orbitals suppress the metal-insulator transition, leading to a critical coupling of approximately eight times the bare band-width. I also demonstrate the effects of orbital ordering, which hinder Mott-Hubbard states and open a band gap. Since multi-band correlations are common in real materials, this work suggests that the existence of very strongly correlated band insulators may be more common than Mott-Hubbard insulators.

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The orbital degrees of freedom are of vital importance in explanation of various phenomena. Among them is the orbital-selective Mott transition (OSMT), which is thought to occur in several materials as Ca 2− x Sr x RuO 4 and La n+1 Ni n O 3 n +1 . OSMT is usually studied in the infinite-dimension limit, and for the time being, it is not clear if it could survive in one-dimensional (1D) case. There exist two scenarios for the OSMT: upon increasing the interaction in a two-band system i) one of the bands becomes insulating, while the other remains metallic and ii) one of the bands becomes empty, while the other may eventually undergo a single-band Mott insulator transition. In this work, we present a preliminary study of the two-orbital Hubbard model by means of Density Matrix Renormalization Group in 1D at quarter-filling, where the second scenario seems to be realized. In particular, we study the orbital densities, double occupancies and form-factors also in the case of finite inter-orbital inter-site hopping.

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I investigate band and Mott insulating states in a two-band Hubbard model, with the aim of understanding the differences between the idealised one-orbital model and the more realistic multi-band case. Using a projection ansatz I show that additional orbitals suppress the metal-insulator transition, leading to a critical coupling of approximately eight times the bare band-width. I also demonstrate the effects of orbital ordering, which hinder Mott-Hubbard states and open a band gap. Since multi-band correlations are common in real materials, this work suggests that the existence of very strongly correlated band insulators may be more common than Mott-Hubbard insulators.
I investigate band and Mott insulating states in a two-band Hubbard model, with the aim of understanding the differences between the idealised one-orbital model and the more realistic multi-band case. Using a projection ansatz I show that additional orbitals suppress the metal-insulator transition, leading to a critical coupling of approximately eight times the bare band-width. I also demonstrate the effects of orbital ordering, which hinder Mott-Hubbard states and open a band gap. Since multi-band correlations are common in real materials, this work suggests that the existence of very strongly correlated band insulators may be more common than Mott-Hubbard insulators.
The orbital degrees of freedom are of vital importance in explanation of various phenomena. Among them is the orbital-selective Mott transition (OSMT), which is thought to occur in several materials as Ca 2− x Sr x RuO 4 and La n+1 Ni n O 3 n +1 . OSMT is usually studied in the infinite-dimension limit, and for the time being, it is not clear if it could survive in one-dimensional (1D) case. There exist two scenarios for the OSMT: upon increasing the interaction in a two-band system i) one of the bands becomes insulating, while the other remains metallic and ii) one of the bands becomes empty, while the other may eventually undergo a single-band Mott insulator transition. In this work, we present a preliminary study of the two-orbital Hubbard model by means of Density Matrix Renormalization Group in 1D at quarter-filling, where the second scenario seems to be realized. In particular, we study the orbital densities, double occupancies and form-factors also in the case of finite inter-orbital inter-site hopping.
We present the influence of spin correlation on the metal-insulator transitions (MIT) in two-orbital Hubbard models by the Kotliar-Ruckenstein slave-boson approach. In the asymmetric half-filling situation, the two orbits simultaneously transit from conducting to insulating states with the increase of Coulomb correlation, accompanied by a paramagnetic (PM)-antiferromagnetic (AFM) transition. The orbital selective Mott transition found in the PM condition is completely suppressed over a wide correlation range, though it may exist in the systems away from half-filling. In the insulating state, the system crosses over from a partially-polarized spin-gapped phase in the intermediate correlation regime to an almost fully-polarized Mott insulating phase in the strong correlation regime. These results demonstrate that the spin modulation to the quasiparticle spectra brings much rich and more interesting MIT scenario in multi-orbital correlated systems.
Electronic states of the two-orbital Hubbard model are investigated by means of the composite opeator method. In addition to the transfer within the same kind of orbital, we introduce the off-diagonal transfer t ', which provides the mixing of orbitals. In the t ' = 0 case, the system shows the orbital selective Mott transition at U = 4. Upon adding t ', the band gap goes wider. This increase of the gap originates from the crossover between the Mott-insulator and the band-insulator.
We study the Mott transition in the three-orbital Hubbard model. To investigate how the orbital level splitting and the Ising-type Hund's coupling affect the Mott transition in the case of two electrons per site, we use the dynamical mean-field theory combined with continuous-time quantum Monte Carlo simulations. The calculation of the double occupancy reveals that the critical interaction strength separating a metallic phase and two kinds of insulating phases shows a nonmonotonic behavior as a function of the level splitting. We find that this behavior is characteristic for 1/31/31/3 filling, in comparison with the preceding results for different fillings and for two-orbital models. Strong competition between the two insulators results in an intriguing first-order transition to an insulating phase having intermediate characters between Mott and band insulators. It is also found that the two insulators show different behaviors in the phase boundary with the metallic phase in the interaction-temperature plane, which is reflected in a difference in the quasiparticle behavior around the transition. We also discuss the orbital selective Mott transition for larger Hund's coupling, which is compared with previous study at zero temperature.
We investigate a quarter-filled two-band Hubbard model involving a crystal-field splitting, which lifts the orbital degeneracy as well as an interorbital hopping (interband hybridization). Both terms are relevant to the realistic description of correlated materials such as transition-metal oxides. The nature of the Mott metal-insulator transition is clarified and is found to depend on the magnitude of the crystal-field splitting. At large values of the splitting, a transition from a two-band to a one-band metal is first found as the on-site repulsion is increased and is followed by a Mott transition for the remaining band, which follows the single-band (Brinkman-Rice) scenario well documented previously within dynamical mean-field theory. At small values of the crystal-field splitting, a direct transition from a two-band metal to a Mott insulator with partial orbital polarization is found, which takes place simultaneously for both orbitals. This transition is characterized by a vanishing of the quasiparticle weight for the majority orbital but has a first-order character for the minority orbital. It is pointed out that finite-temperature effects may easily turn the metallic regime into a bad metal close to the orbital polarization transition in the metallic phase.