Absorption of light by a semiconductor quantum well in a static electric field

Sotirios Baskoutas, Christos S. Garoufalis, A. F. Terzis

V.A. Sinyak

Kazuhito Fujii, AKIRA SHIMIZU, Johan Bergquist +2 more

We have measured two-photon-absorption spectra of GaAs/Al 0.4 Ga 0.6 As quantum-well structures in a static electric field for photon energies near half the band gap energy, and found drastic field-induced-changes in the spectra. The two-photon-absorption peak at half the energy of the lowest light-hole exciton is induced by the static electric field normal to the quantum well layers, in agreement with a theory that takes account of quasi-two-dimensional exciton effects. With increasing the electric field, however, this peak grows more drastically than the theoretical prediction, and it approaches a large value predicted by another simplified theory based on a two-level model.

Ikonić, Z., Milanović, V.

I. G. Lang, L. I. Korovin, S. T. Pavlov

The cross section of light absorption by semiconductor quantum dots in the case of the resonance with excitons $Γ_6 \times Γ_7$ in cubical crystals $T_d$ is calculated. It is shown that an interference of stimulating and induced electric and magnetic fields must be taken into account. The absorption section is proportional to the exciton nonradiative damping $γ$.

Kazuhito Fujii, Akira Shimizu, Johan Bergquist +1 more

We have measured two-photon absorption spectra of quantum-well structures in static electric fields for photon energies close to half the band-gap energy, and found drastic static-field-induced changes in the spectra. Our experimental results agree with a theory based on an infinite-level model, the validity of which was previously established at zero bias, except that a field-induced growth of the two-photon absorption peak at half the lowest light-hole excitation energy is more drastic than the theoretical prediction. At high bias fields the peak height approaches a large value predicted by another simplified theory based on a two-level model.