Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Conference on Lasers and Electro-Optics

EO Integration of Planar Ion Trap and Silicon Photonics for Optical Addressing in Quantum Computing

Yu Dian Lim, Jing Tao, Peng Zhao, Hong Yu Li, Anak Agung Alit Apriyana, Luca Guidoni, Chuan Seng Tan

Published Jan 1, 2020• 8 citations
Publisher

Abstract

Feasibilities of Electro-Optical integration for ion-trapping in quantum computing are demonstrated. Photonics devices exhibit ~33% coupling efficiency and 1.12 dB/cm propagation loss. Wide positional tolerance of ± 10 pm is obtained for optical addressing of trapped ion.
DOI
10.1364/cleo_at.2020.ath1i.3

Related papers

Development and Integration of Silicon Photonics Interposer for Quantum Computing System

Yu Dian Lim, Jing Tao, Peng Zhao +2 more

In this work, we report the design and optimization of photonics interposer for addressing trapped ion in a quantum computing system. The interposer is built on commercial SOI platform comprising of grating couplers and waveguide. 1,092 nm light beam can be coupled into the input coupler and propagates along the waveguide, which is eventually directed towards the trapped 88Sr+ ion qubit. Considering the coupling efficiency of both input and output coupler, the power efficiency reaching the trapped ion can be estimated to be ∼ 16%, and the output 1,092 nm light can be coupled onto the trapped ion qubit for addressing.

IEEE International Conference on Group IV Photonics (GFP)•Aug 1, 2019•1 citation

Development and Integration of Silicon Photonics Interposer for Quantum Computing System

Anak Agung Alit Apriyana, Yu Dian Lim, Chuan Seng Tan +2 more

In this work, we report the design and optimization of photonics interposer for addressing trapped ion in a quantum computing system. The interposer is built on commercial SOI platform comprising of grating couplers and waveguide. 1,092 nm light beam can be coupled into the input coupler and propagates along the waveguide, which is eventually directed towards the trapped 88Sr+ ion qubit. Considering the coupling efficiency of both input and output coupler, the power efficiency reaching the trapped ion can be estimated to be ∼ 16%, and the output 1,092 nm light can be coupled onto the trapped ion qubit for addressing.

IEEE International Conference on Group IV Photonics (GFP)•Aug 1, 2019•3 citations

Multi-level photonics for trapped-ion quantum computing

Dave Kharas, Cheryl M. Sorace-Agaskar, Suraj Bramhavar +4 more

A scalable trapped-ion-based quantum-computing architecture requires the capability to optically address individual ions at several wavelengths. We demonstrate a dual-layered silicon nitride photonic platform for integration into planar ion traps designed for trapped-ion control in a 400 to 1100 nm wavelength range.

IEEE/LEOS Summer Topical Meetings•Jul 1, 2017•5 citations

Individual trapped-ion addressing with adjoint-optimized multimode photonic circuits

Melika Momenzadeh, Ke Sun, Qiming Wu +4 more

Trapped-ion quantum computing requires precise optical control for individual qubit manipulation. However, conventional free-space optics face challenges in alignment stability and scalability as the number of qubits increases. Integrated photonics offers a promising alternative, providing miniaturized optical systems on a chip. Here, we propose a design for a multimode photonic circuit integrated with a surface-electrode ion trap capable of targeted and reconfigurable light delivery. Three closely positioned ions can be addressed using a focusing grating coupler that emits multimode light through electrode openings to ions trapped 68 μm above the chip. Simulations show that the couplers achieve a diffraction-limited spot with a 4.3 μm beam waist along the trap axis and 2.2 μm perpendicular to the trap axis. Controlled interference of the TE 00 and TE 10 modes results in crosstalk of –20 dB to –30 dB at ion separations of 5–8 μm when addressing ions individually, and down to –60 dB when two of the three ions are addressed simultaneously. Additionally, the higher-order TE modes can offer a novel mechanism for driving spin-motion coupling transitions, potentially enabling alternative approaches to quantum gates and simulations. The proposed integrated platform offers a viable path for constructing large-scale trapped-ion systems, leveraging the benefits of nanophotonic design for precise and reliable ion manipulation.

npj Nanophotonics•Jan 27, 2026•3 citations

A broadband, individually addressing two- and three-dimensional photonic integrated circuit for trapped-ion qubit control

Daniel Klawson, Yiyang Zhi, Bingran You +21 more

Trapped ions provide a high-fidelity platform for quantum information processing, yet delivery of multiple, distinct wavelengths across large networks of interaction zones remains a bottleneck. Conventional free-space light delivery lacks scalability, while on-chip grating couplers suffer from narrow operational bandwidth that increases circuit footprint and optical interfacing complexity. Here we show a broadband photonic integrated circuit capable of addressing individual ions. The circuit combines a planar waveguide lens with a micromirror fabricated using two-photon polymerization at wafer scale. This implementation can address three individual ions from $λ$ = 405 - 880 nm with -27 dB average intensity crosstalk at $5\,μ\mathrm{m}$ pitch. We trap $^{40}\mathrm{Ca}^{+}$ and $^{138}\mathrm{Ba}^{+}$ ions above such devices, characterize optical crosstalk with barium ions, and demonstrate individual repumping of calcium ions. This monolithic photonic architecture brings broadband addressing in an on-chip modality to trapped-ion technology. More generally, integrating additive manufacturing into quantum devices is poised to unlock expanded design space for implementing novel quantum architectures.

quant-pharXiv:2607.25062•Jul 29, 2026•0 citations

Scalable Trapped Ion Addressing with Adjoint-optimized Multimode Photonic Circuits

Melika Momenzadeh, Ke Sun, Qing Yun Wu +4 more

Trapped-ion quantum computing requires precise optical control for individual qubit manipulation. However, conventional free-space optics face challenges in alignment stability and scalability as the number of qubits increases. Integrated photonics offers a promising alternative, providing miniaturized optical systems on a chip. Here, we propose a design for a multimode photonic circuit integrated with a surface-electrode ion trap capable of targeted and reconfigurable light delivery. Three closely positioned ions can be addressed using a focusing grating coupler that emits multimode light through electrode openings to ions trapped 80 $μ$m above the chip. Simulations show that the couplers achieve diffraction-limited spot with a 4.3 $μ$m beam waist along the trap axis and 2.2 $μ$m perpendicular to the trap axis. Controlled interference of the TE$_{\text{10}}$ and TE$_{\text{20}}$ modes results in crosstalk of -20 dB to -30 dB at ion separations of 5-8 $μ$m when addressing ions individually, and down to -60 dB when two of the three ions are addressed simultaneously. Additionally, the higher-order TE modes can offer a novel mechanism for driving spin-motion coupling transitions, potentially enabling alternative approaches to quantum gates and simulations. The proposed integrated platform offers a viable path for constructing large-scale trapped-ion systems, leveraging the benefits of nanophotonic design for precise and reliable ion manipulation.

arXiv:2505.08997•May 13, 2025•0 citations
In this work, we report the design and optimization of photonics interposer for addressing trapped ion in a quantum computing system. The interposer is built on commercial SOI platform comprising of grating couplers and waveguide. 1,092 nm light beam can be coupled into the input coupler and propagates along the waveguide, which is eventually directed towards the trapped 88Sr+ ion qubit. Considering the coupling efficiency of both input and output coupler, the power efficiency reaching the trapped ion can be estimated to be ∼ 16%, and the output 1,092 nm light can be coupled onto the trapped ion qubit for addressing.
In this work, we report the design and optimization of photonics interposer for addressing trapped ion in a quantum computing system. The interposer is built on commercial SOI platform comprising of grating couplers and waveguide. 1,092 nm light beam can be coupled into the input coupler and propagates along the waveguide, which is eventually directed towards the trapped 88Sr+ ion qubit. Considering the coupling efficiency of both input and output coupler, the power efficiency reaching the trapped ion can be estimated to be ∼ 16%, and the output 1,092 nm light can be coupled onto the trapped ion qubit for addressing.
Trapped-ion quantum computing requires precise optical control for individual qubit manipulation. However, conventional free-space optics face challenges in alignment stability and scalability as the number of qubits increases. Integrated photonics offers a promising alternative, providing miniaturized optical systems on a chip. Here, we propose a design for a multimode photonic circuit integrated with a surface-electrode ion trap capable of targeted and reconfigurable light delivery. Three closely positioned ions can be addressed using a focusing grating coupler that emits multimode light through electrode openings to ions trapped 68 μm above the chip. Simulations show that the couplers achieve a diffraction-limited spot with a 4.3 μm beam waist along the trap axis and 2.2 μm perpendicular to the trap axis. Controlled interference of the TE 00 and TE 10 modes results in crosstalk of –20 dB to –30 dB at ion separations of 5–8 μm when addressing ions individually, and down to –60 dB when two of the three ions are addressed simultaneously. Additionally, the higher-order TE modes can offer a novel mechanism for driving spin-motion coupling transitions, potentially enabling alternative approaches to quantum gates and simulations. The proposed integrated platform offers a viable path for constructing large-scale trapped-ion systems, leveraging the benefits of nanophotonic design for precise and reliable ion manipulation.
Trapped ions provide a high-fidelity platform for quantum information processing, yet delivery of multiple, distinct wavelengths across large networks of interaction zones remains a bottleneck. Conventional free-space light delivery lacks scalability, while on-chip grating couplers suffer from narrow operational bandwidth that increases circuit footprint and optical interfacing complexity. Here we show a broadband photonic integrated circuit capable of addressing individual ions. The circuit combines a planar waveguide lens with a micromirror fabricated using two-photon polymerization at wafer scale. This implementation can address three individual ions from λλλ = 405 - 880 nm with -27 dB average intensity crosstalk at 5 μm5\,μ\mathrm{m}5μm pitch. We trap 40Ca+^{40}\mathrm{Ca}^{+}40Ca+ and 138Ba+^{138}\mathrm{Ba}^{+}138Ba+ ions above such devices, characterize optical crosstalk with barium ions, and demonstrate individual repumping of calcium ions. This monolithic photonic architecture brings broadband addressing in an on-chip modality to trapped-ion technology. More generally, integrating additive manufacturing into quantum devices is poised to unlock expanded design space for implementing novel quantum architectures.
Trapped-ion quantum computing requires precise optical control for individual qubit manipulation. However, conventional free-space optics face challenges in alignment stability and scalability as the number of qubits increases. Integrated photonics offers a promising alternative, providing miniaturized optical systems on a chip. Here, we propose a design for a multimode photonic circuit integrated with a surface-electrode ion trap capable of targeted and reconfigurable light delivery. Three closely positioned ions can be addressed using a focusing grating coupler that emits multimode light through electrode openings to ions trapped 80 μμμm above the chip. Simulations show that the couplers achieve diffraction-limited spot with a 4.3 μμμm beam waist along the trap axis and 2.2 μμμm perpendicular to the trap axis. Controlled interference of the TE10_{\text{10}}10​ and TE20_{\text{20}}20​ modes results in crosstalk of -20 dB to -30 dB at ion separations of 5-8 μμμm when addressing ions individually, and down to -60 dB when two of the three ions are addressed simultaneously. Additionally, the higher-order TE modes can offer a novel mechanism for driving spin-motion coupling transitions, potentially enabling alternative approaches to quantum gates and simulations. The proposed integrated platform offers a viable path for constructing large-scale trapped-ion systems, leveraging the benefits of nanophotonic design for precise and reliable ion manipulation.