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IEEE International Conference on Group IV Photonics (GFP)

Development and Integration of Silicon Photonics Interposer for Quantum Computing System

Yu Dian Lim, Jing Tao, Peng Zhao, Anak Agung Alit Apriyana, Chuan Seng Tan

Published Aug 1, 2019• 1 citation
Publisher

Abstract

In this work, we report the design and optimization of photonics interposer for addressing trapped ion in a quantum computing system. The interposer is built on commercial SOI platform comprising of grating couplers and waveguide. 1,092 nm light beam can be coupled into the input coupler and propagates along the waveguide, which is eventually directed towards the trapped 88Sr+ ion qubit. Considering the coupling efficiency of both input and output coupler, the power efficiency reaching the trapped ion can be estimated to be ∼ 16%, and the output 1,092 nm light can be coupled onto the trapped ion qubit for addressing.

DOI
10.1109/group4.2019.8925952

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•Jun 26, 2026•0 citations
In this work, we report the design and optimization of photonics interposer for addressing trapped ion in a quantum computing system. The interposer is built on commercial SOI platform comprising of grating couplers and waveguide. 1,092 nm light beam can be coupled into the input coupler and propagates along the waveguide, which is eventually directed towards the trapped 88Sr+ ion qubit. Considering the coupling efficiency of both input and output coupler, the power efficiency reaching the trapped ion can be estimated to be ∼ 16%, and the output 1,092 nm light can be coupled onto the trapped ion qubit for addressing.
In this work, we report the design and optimization of photonics interposer for addressing trapped ion in a quantum computing system. The interposer is built on commercial SOI platform comprising of grating couplers and waveguide. 1,092 nm light beam can be coupled into the input coupler and propagates along the waveguide, which is eventually directed towards the trapped 88Sr+ ion qubit. Considering the coupling efficiency of both input and output coupler, the power efficiency reaching the trapped ion can be estimated to be ∼ 16%, and the output 1,092 nm light can be coupled onto the trapped ion qubit for addressing.
Trapped-ion quantum computers, leveraging a quantum charge-coupled device (QCCD) architecture, have world-class performance in the field of quantum computing, offering high fidelities and all-to-all connectivity [1]. While systems have advanced over the last decade, much work remains to scale quantum computers to fault-tolerance. Providing scalable light delivery is one key challenge. Current systems utilize engineered bulk- and fiber-optic-based light delivery systems, external to the vacuum chamber, to deliver arrays of beams to ions. However, fundamental optical limitations preclude the use of such systems when scaling beyond thousands of qubits. Integrated photonic-based beam delivery offers a potential solution, with encouraging proof-of-concept demonstrations from the photonics and quantum communities [2]–[5]. Quantinuum and Sandia National Labs have partnered to accelerate the development of integrated photonics for trapped-ion quantum computing applications, working towards photonic components supporting high-fidelity operations. Here, we present development of photonic integrated components designed to deliver laser light toBa+\text{Ba}^{+}Ba+qubits, utilizing a low-loss, high-confinement, trap-integrable PECVD SiN platform. In order to demonstrate two-qubit gates at 532 nm, we developed low loss, tight bend waveguides, efficient edge couplers, and asymmetric multimode interference (MMI) splitters, along with beam-forming grating out-couplers delivering gaussian beams at the ion plane. For quantum state preparation and measurement (SPAM) applications at4 9 3   n m\text{4 9 3 ~ n m}4 9 3   n m, we demonstrate fabrication-tolerant splitters and low-crosstalk gratings. Measured component performance shows promise for future trap-integrated demonstrations.
Trapped-ion qubits have been advantageous in quantum information processing due to their long coherence times and high-fidelity state preparation, logic gate operation, and readout. In recent years, we have fabricated chips with electrodes – for generating the electric field for trapping ions – and photonic waveguides and grating out-couplers – for delivering light to the ions. The integrated photonics can potentially lower the laser power requirement and lead to faster gates; however, there are challenges that need to be overcome for the platform to be beneficial. Here, we demonstrate single and two qubit gates with Sr+ trapped ion qubits, driven by delivering light to the ions both via free space and integrated photonics. We show that robust quantum logic is within reach using the integrated photonic platform, and the approaches we are taking in mitigating current challenges.
Trapped-ion quantum computing requires precise optical control for individual qubit manipulation. However, conventional free-space optics face challenges in alignment stability and scalability as the number of qubits increases. Integrated photonics offers a promising alternative, providing miniaturized optical systems on a chip. Here, we propose a design for a multimode photonic circuit integrated with a surface-electrode ion trap capable of targeted and reconfigurable light delivery. Three closely positioned ions can be addressed using a focusing grating coupler that emits multimode light through electrode openings to ions trapped 80 μμμm above the chip. Simulations show that the couplers achieve diffraction-limited spot with a 4.3 μμμm beam waist along the trap axis and 2.2 μμμm perpendicular to the trap axis. Controlled interference of the TE10_{\text{10}}10​ and TE20_{\text{20}}20​ modes results in crosstalk of -20 dB to -30 dB at ion separations of 5-8 μμμm when addressing ions individually, and down to -60 dB when two of the three ions are addressed simultaneously. Additionally, the higher-order TE modes can offer a novel mechanism for driving spin-motion coupling transitions, potentially enabling alternative approaches to quantum gates and simulations. The proposed integrated platform offers a viable path for constructing large-scale trapped-ion systems, leveraging the benefits of nanophotonic design for precise and reliable ion manipulation.
Trapped-ion quantum computing requires precise optical control for individual qubit manipulation. However, conventional free-space optics face challenges in alignment stability and scalability as the number of qubits increases. Integrated photonics offers a promising alternative, providing miniaturized optical systems on a chip. Here, we propose a design for a multimode photonic circuit integrated with a surface-electrode ion trap capable of targeted and reconfigurable light delivery. Three closely positioned ions can be addressed using a focusing grating coupler that emits multimode light through electrode openings to ions trapped 68 μm above the chip. Simulations show that the couplers achieve a diffraction-limited spot with a 4.3 μm beam waist along the trap axis and 2.2 μm perpendicular to the trap axis. Controlled interference of the TE 00 and TE 10 modes results in crosstalk of –20 dB to –30 dB at ion separations of 5–8 μm when addressing ions individually, and down to –60 dB when two of the three ions are addressed simultaneously. Additionally, the higher-order TE modes can offer a novel mechanism for driving spin-motion coupling transitions, potentially enabling alternative approaches to quantum gates and simulations. The proposed integrated platform offers a viable path for constructing large-scale trapped-ion systems, leveraging the benefits of nanophotonic design for precise and reliable ion manipulation.
Trapped ions are one of the most advanced platforms for quantum technologies, with applications ranging from quantum computing to precision timekeeping. A crucial step towards more compact and scalable systems involves integrating photonic integrated circuits (PICs) into surface ion traps to enable on-chip light delivery and optical addressing of individual ions. Currently, most implementations rely solely on transverse-electric (TE) mode grating couplers, where the emitted light is polarized in the plane of the chip. In this work, we design, fabricate and characterize key silicon nitride (Si3N4) PIC components required for scaling trapped-ion based quantum systems to multiple operating zones, including incoupling structures, splitters, and grating couplers that support both TE and transverse-magnetic (TM) modes with comparable optical losses. We benchmark the PIC at 760 nm, which is a typical wavelength for Yb+-applications. The fabricated grating couplers enable the outcoupling of collimated free-space beams for both polarizations, exhibiting distinct emission angles. This dual-polarization capability gives more flexibility in polarization control and expands the accessible optical design space for trapped-ion quantum technologies.