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Anomalous Pumped and Unpumped I-V Characteristics of Nb SIS Terahertz Mixers with NbTiN Striplines

Bruno Leone, Brian D. Jackson, J. R. Gao, T. M. Klapwijk, W. M. Laauwen, Gert J. de Lange

Published May 1, 2000• 0 citations
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It is expected that the integration of NbTiN striplines with Nb-based SIS junctions will extend the range of operation of sensitive SIS mixers up to the energy gap of NbTiN (— 1.2-1.25 THz) to meet the requirements of the HIFI instrument for the Far-Infrared Space Telescope (FIRST). We have fabricated prototype RS waveguide mixers in which Nb/A1-A10,INb SIS junctions are integrated with NbTiN and Al wiring layers. DC current-voltage measurements of these devices show that the voltage gap is somewhat lower and the sub-gap current is somewhat higher for devices with two NbTiN wiring layers in comparison with those in which the top wiring layer is Al (Vgap = 2.7 mV vs. 2.8 mV, and R 2.0/RN — 32 vs. 35). Additionally, the gap voltage of the NbTiN stripline devices is further suppressed by the application of 890-1040 GHz local oscillator power during heterodyne measurements. These effects are attributed to the trapping of heat in the Nb junction electrodes due primarily to quasi-particle trapping at the Nb/NbTiN interface. FTS measurements result in what is believed to be the first reported observation of direct detection response in a NbTiN stripline device above 1.1 'THz. From an analysis of the resonance frequencies of several devices, it appears that the frequency response of the NbTiN striplines is predicted reasonably well by the MattisBardeen theory for the conductivity of a superconductor in the extreme anomalous limit. Furthermore, we present what is believed to be the first reported heterodyne measurements of NbTiN stripline devices in the 0.9-1 THz range. These measurements yield a receiver sensitivity of TN = 830 K at 930 GHz at a bath temperature of 3.3 K, after correction for beamsplitter losses.

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We analyse both the direct current and submillimeter pumped current-voltage characteristics of a hybrid superconductor-insulator-superconductor terahertz mixer consisting of a Nb tunnel junction integrated with NbTiN tuning striplines. We find that the presence of the Nb/NbTiN interface gives rise to a hot electron effect. The assumption of an equilibrium electron temperature, as distinct from the phonon temperature, allows a complete understanding of the processes involved. The impact of the hot electron effect on superconducting terahertz detectors is discussed.

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The current status of low-noise THz mixers based on SIS junctions

Brian D. Jackson, T. M. Klapwijk

Physica C Superconductivity•Aug 1, 2002•9 citations
It is expected that the integration of NbTiN striplines with Nb-based SIS junctions will extend the range of operation of sensitive SIS mixers up to the energy gap of NbTiN (— 1.2-1.25 THz) to meet the requirements of the HIFI instrument for the Far-Infrared Space Telescope (FIRST). We have fabricated prototype RS waveguide mixers in which Nb/A1-A10,INb SIS junctions are integrated with NbTiN and Al wiring layers. DC current-voltage measurements of these devices show that the voltage gap is somewhat lower and the sub-gap current is somewhat higher for devices with two NbTiN wiring layers in comparison with those in which the top wiring layer is Al (Vgap = 2.7 mV vs. 2.8 mV, and R 2.0/RN — 32 vs. 35). Additionally, the gap voltage of the NbTiN stripline devices is further suppressed by the application of 890-1040 GHz local oscillator power during heterodyne measurements. These effects are attributed to the trapping of heat in the Nb junction electrodes due primarily to quasi-particle trapping at the Nb/NbTiN interface. FTS measurements result in what is believed to be the first reported observation of direct detection response in a NbTiN stripline device above 1.1 'THz. From an analysis of the resonance frequencies of several devices, it appears that the frequency response of the NbTiN striplines is predicted reasonably well by the MattisBardeen theory for the conductivity of a superconductor in the extreme anomalous limit. Furthermore, we present what is believed to be the first reported heterodyne measurements of NbTiN stripline devices in the 0.9-1 THz range. These measurements yield a receiver sensitivity of TN = 830 K at 930 GHz at a bath temperature of 3.3 K, after correction for beamsplitter losses.
We analyse both the direct current and submillimeter pumped current-voltage characteristics of a hybrid superconductor-insulator-superconductor terahertz mixer consisting of a Nb tunnel junction integrated with NbTiN tuning striplines. We find that the presence of the Nb/NbTiN interface gives rise to a hot electron effect. The assumption of an equilibrium electron temperature, as distinct from the phonon temperature, allows a complete understanding of the processes involved. The impact of the hot electron effect on superconducting terahertz detectors is discussed.
We have designed superconductor-insulator-superconductor (SIS) mixers using Nb/AlN/Nb tunnel junctions integrated with NbTiN/SiO2/NbTiN microstrip tuning circuits for the Atacama Large Millimeter/submillimeter Array (ALMA) Band 10 (0.78-0.95 THz). In order to design the tuning circuits, we used terahertz time domain spectroscopy to experimentally derive the complex conductivity of relatively thick NbTiN films deposited on quartz substrate directly as a ground plane and on RF-sputtered SiO2as a microstrip. Results showed that the conductivities of both films can be described by a modified Mattis-Bardeen theory. We also investigated the junction heating effects originating from quasi-particle trapping in the Nb electrodes embedded in NbTiN circuits by varying the volume of the electrodes. It was confirmed that current-voltage curves of Nb/AlN/Nb tunnel junctions with thick (~200 nm) counter electrodes contacting NbTiN wirings showed higher gap voltages as well as reduced back-bending than those with thin (~50 nm) electrodes. Making use of these findings, our designed SIS mixers employing Nb/AlN/Nb junctions with a current density of 15 kA/cm2and all-NbTiN tuning circuits may cover the Band 10 with good sensitivity.