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DC AND TERAHERTZ RESPONSE IN Nb SIS MIXERS WITH NbTiN STRIPLINES

Brian D. Jackson, N. N. Iosad, W. M. Laauwen, G. Delange, J. R. Gao, Herman van de Stadt, T. M. Klapwijk

Published Mar 1, 1999• 4 citations
OpenAlex

Abstract

It is expected that the integration of NbTiN striplines with Nb-based SIS junctions will extend the range of operation of sensitive SIS mixers up to the energy gap of NbTiN (— 1.2-1.25 THz) to meet the requirements of the HIFI instrument for the Far-Infrared Space Telescope (FIRST). We have fabricated prototype RS waveguide mixers in which Nb/A1-A10,INb SIS junctions are integrated with NbTiN and Al wiring layers. DC current-voltage measurements of these devices show that the voltage gap is somewhat lower and the sub-gap current is somewhat higher for devices with two NbTiN wiring layers in comparison with those in which the top wiring layer is Al (Vgap = 2.7 mV vs. 2.8 mV, and R 2.0/RN — 32 vs. 35). Additionally, the gap voltage of the NbTiN stripline devices is further suppressed by the application of 890-1040 GHz local oscillator power during heterodyne measurements. These effects are attributed to the trapping of heat in the Nb junction electrodes due primarily to quasi-particle trapping at the Nb/NbTiN interface. FTS measurements result in what is believed to be the first reported observation of direct detection response in a NbTiN stripline device above 1.1 'THz. From an analysis of the resonance frequencies of several devices, it appears that the frequency response of the NbTiN striplines is predicted reasonably well by the MattisBardeen theory for the conductivity of a superconductor in the extreme anomalous limit. Furthermore, we present what is believed to be the first reported heterodyne measurements of NbTiN stripline devices in the 0.9-1 THz range. These measurements yield a receiver sensitivity of TN = 830 K at 930 GHz at a bath temperature of 3.3 K, after correction for beamsplitter losses.

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Low-noise THz Niobium SIS Mixers

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This thesis describes the development of low-noise heterodyne receivers at THz frequencies for submillimeter astronomy using Nb-based superconductor-insulator-superconductor (SIS) tunneling junctions. The mixers utilize a quasi-optical configuration which consists of a planar twin-slot antenna and antisymmetrically-fed two-junctions on an antireflection-coated silicon hyperhemispherical lens. On-chip integrated tuning circuits, in the form of microstrip lines, are used to obtain maximum coupling efficiency in the designed frequency band. To reduce the rf losses in the integrated tuning circuits above the superconducting Nb gap frequency (~ 700 GHz), normal-metal Al is used to replace Nb as the tuning circuits. To account the rf losses in the micros trip lines, we calculated the surface impedance of the AI films using the nonlocal anomalous skin effect for finite thickness films. Nb films were calculated using the Mattis-Bardeen theory in the extreme anomalous limit. Our calculations show that the losses of the Al and Nb microstrip lines are about equal at 830 GHz. For Al-wiring and Nb-wiring mixers both optimized at 1050 GHz, the RF coupling efficiency of Al-wiring mixer is higher than that of Nb-wiring one by almost 50%. We have designed both Nb-wiring and Al-wiring mixers below and above the gap frequency. A Fourier transform spectrometer (FTS) has been constructed especially for the study of the frequency response of SIS receivers. This FTS features large aperture size (10 inch) and high frequency resolution (114 MHz). The FTS spectra, obtained using the SIS receivers as direct detectors on the FTS, agree quite well with our theoretical simulations. We have also, for the first time, measured the FTS heterodyne response of an SIS mixer at sufficiently high resolution to resolve the LO and the sidebands. Heterodyne measurements of our SIS receivers with Nb-wiring or Al-wiring have yielded results which arc among the best reported to date for broadband heterodyne receivers. The Nb-wiring mixers, covering 400 - 850 GHz band with four separate fixed-tuned mixers, have uncorrected DSB receiver noise temperature around 5hv/kb to 700 GHz, and better than 540 K at 808 GHz. An Al-wiring mixer designed for 1050 GHz band has an uncorrected DSB receiver noise temperature 840 K at 1042 GHz and 2.5 K bath temperature. Mixer performance analysis shows that Nb junctions can work well up to twice the gap frequency and the major cause of loss above the gap frequency is the rf losses in the microstrip tuning structures. Further advances in THz SIS mixers may be possible using circuits fabricated with higher-gap superconductors such as NbN. However, this will require high-quality films with low RF surface resistance at THz frequencies.

•Sep 1, 1997•8 citations

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There are great interests in developing Nb SIS mixers because of the extremely low noise temperatures and because of the need of low local oscillator (LO) power. Several groups have demonstrated experimentally that Nb SIS mixers with integrated tuning elements can perform near the quantum noise limit up to the Nb gap frequency (/spl sim/700 GHz). Beyond this frequency, a major loss will take place in the tuning elements, which are Nb-SiO/sub 2/-Nb micro-striplines, because the incoming photons can break the Cooper-pairs, thus increasing the surface resistance of the Nb strips. Applying highly conductive Al instead of Nb for a stripline can reduce the loss since the former has a lower surface resistance at higher frequencies. In this work, we report the fabrication of waveguide Nb SIS mixers with Al striplines and heterodyne measurement results around 1 THz.

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We have designed superconductor-insulator-superconductor (SIS) mixers using Nb/AlN/Nb tunnel junctions integrated with NbTiN/SiO2/NbTiN microstrip tuning circuits for the Atacama Large Millimeter/submillimeter Array (ALMA) Band 10 (0.78-0.95 THz). In order to design the tuning circuits, we used terahertz time domain spectroscopy to experimentally derive the complex conductivity of relatively thick NbTiN films deposited on quartz substrate directly as a ground plane and on RF-sputtered SiO2as a microstrip. Results showed that the conductivities of both films can be described by a modified Mattis-Bardeen theory. We also investigated the junction heating effects originating from quasi-particle trapping in the Nb electrodes embedded in NbTiN circuits by varying the volume of the electrodes. It was confirmed that current-voltage curves of Nb/AlN/Nb tunnel junctions with thick (~200 nm) counter electrodes contacting NbTiN wirings showed higher gap voltages as well as reduced back-bending than those with thin (~50 nm) electrodes. Making use of these findings, our designed SIS mixers employing Nb/AlN/Nb junctions with a current density of 15 kA/cm2and all-NbTiN tuning circuits may cover the Band 10 with good sensitivity.

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Nb-based superconductor - insulator - superconductor (SIS) mixers with Nb tuning circuits have demonstrated good results up to the Nb gap frequency. Above the gap frequency the performance is expected to degrade quickly because RF loss in Nb becomes significant. In this paper we present the results of an effort to extend Nb-based SIS mixers to THz frequencies by employing lower-loss normal-metal Al wiring and tuning structures. The SIS mixer has two Nb/Al-oxide/Nb junctions connected by an Al microstrip inductor. The direct detection response of the device was measured by a Fourier transform spectrometer. A double-side-band receiver noise temperature of 840 K was obtained at 1042 GHz when the device was operated at 2.5 K.

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We present the development of a low noise 1.2 THz and 1.4 THz SIS mixers for heterodyne spectrometry on the Stratospheric Observatory For Infrared Astronomy (SOFIA) and Herschel Space Observatory. This frequency range is above the limit for the commonly used Nb quasi particle SIS junctions, and a special type of hybrid Nb/AlN/NbTiN junctions has been developed for this project. We are using a quasi-optical mixer design with two Nb/AlN/NbTiN junctions with an area of 0.25. The SIS junction tuning circuit is made of Nb and gold wire layers. At 1.13 THz the minimum SIS receiver uncorrected noise temperature is 450 K. The SIS receiver noise corrected for the loss in the LO coupler and in the cryostat optics is 350-450 K across 1.1-1.25 THz band. The receiver has a uniform sensitivity in a full 4-8 GHz IF band. The 1.4 THz SIS receiver test at 1.33-1.35 THz gives promising results, although limited by the level of available LO power. Extrapolation of the data obtained with low LO power level shows a possibility to reach 500 K DSB receiver noise using already existing SIS mixer.

IEEE Transactions on Applied Superconductivity•Jun 1, 2007•59 citations
It is expected that the integration of NbTiN striplines with Nb-based SIS junctions will extend the range of operation of sensitive SIS mixers up to the energy gap of NbTiN (— 1.2-1.25 THz) to meet the requirements of the HIFI instrument for the Far-Infrared Space Telescope (FIRST). We have fabricated prototype RS waveguide mixers in which Nb/A1-A10,INb SIS junctions are integrated with NbTiN and Al wiring layers. DC current-voltage measurements of these devices show that the voltage gap is somewhat lower and the sub-gap current is somewhat higher for devices with two NbTiN wiring layers in comparison with those in which the top wiring layer is Al (Vgap = 2.7 mV vs. 2.8 mV, and R 2.0/RN — 32 vs. 35). Additionally, the gap voltage of the NbTiN stripline devices is further suppressed by the application of 890-1040 GHz local oscillator power during heterodyne measurements. These effects are attributed to the trapping of heat in the Nb junction electrodes due primarily to quasi-particle trapping at the Nb/NbTiN interface. FTS measurements result in what is believed to be the first reported observation of direct detection response in a NbTiN stripline device above 1.1 'THz. From an analysis of the resonance frequencies of several devices, it appears that the frequency response of the NbTiN striplines is predicted reasonably well by the MattisBardeen theory for the conductivity of a superconductor in the extreme anomalous limit. Furthermore, we present what is believed to be the first reported heterodyne measurements of NbTiN stripline devices in the 0.9-1 THz range. These measurements yield a receiver sensitivity of TN = 830 K at 930 GHz at a bath temperature of 3.3 K, after correction for beamsplitter losses.
This thesis describes the development of low-noise heterodyne receivers at THz frequencies for submillimeter astronomy using Nb-based superconductor-insulator-superconductor (SIS) tunneling junctions. The mixers utilize a quasi-optical configuration which consists of a planar twin-slot antenna and antisymmetrically-fed two-junctions on an antireflection-coated silicon hyperhemispherical lens. On-chip integrated tuning circuits, in the form of microstrip lines, are used to obtain maximum coupling efficiency in the designed frequency band. To reduce the rf losses in the integrated tuning circuits above the superconducting Nb gap frequency (~ 700 GHz), normal-metal Al is used to replace Nb as the tuning circuits. To account the rf losses in the micros trip lines, we calculated the surface impedance of the AI films using the nonlocal anomalous skin effect for finite thickness films. Nb films were calculated using the Mattis-Bardeen theory in the extreme anomalous limit. Our calculations show that the losses of the Al and Nb microstrip lines are about equal at 830 GHz. For Al-wiring and Nb-wiring mixers both optimized at 1050 GHz, the RF coupling efficiency of Al-wiring mixer is higher than that of Nb-wiring one by almost 50%. We have designed both Nb-wiring and Al-wiring mixers below and above the gap frequency. A Fourier transform spectrometer (FTS) has been constructed especially for the study of the frequency response of SIS receivers. This FTS features large aperture size (10 inch) and high frequency resolution (114 MHz). The FTS spectra, obtained using the SIS receivers as direct detectors on the FTS, agree quite well with our theoretical simulations. We have also, for the first time, measured the FTS heterodyne response of an SIS mixer at sufficiently high resolution to resolve the LO and the sidebands. Heterodyne measurements of our SIS receivers with Nb-wiring or Al-wiring have yielded results which arc among the best reported to date for broadband heterodyne receivers. The Nb-wiring mixers, covering 400 - 850 GHz band with four separate fixed-tuned mixers, have uncorrected DSB receiver noise temperature around 5hv/kb to 700 GHz, and better than 540 K at 808 GHz. An Al-wiring mixer designed for 1050 GHz band has an uncorrected DSB receiver noise temperature 840 K at 1042 GHz and 2.5 K bath temperature. Mixer performance analysis shows that Nb junctions can work well up to twice the gap frequency and the major cause of loss above the gap frequency is the rf losses in the microstrip tuning structures. Further advances in THz SIS mixers may be possible using circuits fabricated with higher-gap superconductors such as NbN. However, this will require high-quality films with low RF surface resistance at THz frequencies.
There are great interests in developing Nb SIS mixers because of the extremely low noise temperatures and because of the need of low local oscillator (LO) power. Several groups have demonstrated experimentally that Nb SIS mixers with integrated tuning elements can perform near the quantum noise limit up to the Nb gap frequency (/spl sim/700 GHz). Beyond this frequency, a major loss will take place in the tuning elements, which are Nb-SiO/sub 2/-Nb micro-striplines, because the incoming photons can break the Cooper-pairs, thus increasing the surface resistance of the Nb strips. Applying highly conductive Al instead of Nb for a stripline can reduce the loss since the former has a lower surface resistance at higher frequencies. In this work, we report the fabrication of waveguide Nb SIS mixers with Al striplines and heterodyne measurement results around 1 THz.
We have designed superconductor-insulator-superconductor (SIS) mixers using Nb/AlN/Nb tunnel junctions integrated with NbTiN/SiO2/NbTiN microstrip tuning circuits for the Atacama Large Millimeter/submillimeter Array (ALMA) Band 10 (0.78-0.95 THz). In order to design the tuning circuits, we used terahertz time domain spectroscopy to experimentally derive the complex conductivity of relatively thick NbTiN films deposited on quartz substrate directly as a ground plane and on RF-sputtered SiO2as a microstrip. Results showed that the conductivities of both films can be described by a modified Mattis-Bardeen theory. We also investigated the junction heating effects originating from quasi-particle trapping in the Nb electrodes embedded in NbTiN circuits by varying the volume of the electrodes. It was confirmed that current-voltage curves of Nb/AlN/Nb tunnel junctions with thick (~200 nm) counter electrodes contacting NbTiN wirings showed higher gap voltages as well as reduced back-bending than those with thin (~50 nm) electrodes. Making use of these findings, our designed SIS mixers employing Nb/AlN/Nb junctions with a current density of 15 kA/cm2and all-NbTiN tuning circuits may cover the Band 10 with good sensitivity.
Heterodyne mixers incorporating Nb SIS junctions and NbTiN-SiO/sub 2/-Al microstrip tuning circuits offer the lowest reported receiver noise temperatures to date in the 0.8-0.96- and 0.96-1.12-THz frequency bands. In particular, improvements in the quality of the NbTiN ground plane of the SIS devices' on-chip microstrip tuning circuits have yielded significant improvements in the sensitivity of the 0.96-1.12-THz mixers relative to previously presented results. Additionally, an optimized RF design incorporating a reduced-height waveguide and suspended stripline RF choke filter offers significantly larger operating bandwidths than were obtained with mixers that incorporated full-height waveguides near 1 THz. Finally, the impact of junction current density and quality on the performance of the 0.8-0.96-THz mixers is discussed and compared with measured mixer sensitivities, as are the relative sensitivities of the 0.8-0.96- and 0.96-1.12-THz mixers.
Nb-based superconductor - insulator - superconductor (SIS) mixers with Nb tuning circuits have demonstrated good results up to the Nb gap frequency. Above the gap frequency the performance is expected to degrade quickly because RF loss in Nb becomes significant. In this paper we present the results of an effort to extend Nb-based SIS mixers to THz frequencies by employing lower-loss normal-metal Al wiring and tuning structures. The SIS mixer has two Nb/Al-oxide/Nb junctions connected by an Al microstrip inductor. The direct detection response of the device was measured by a Fourier transform spectrometer. A double-side-band receiver noise temperature of 840 K was obtained at 1042 GHz when the device was operated at 2.5 K.
We present the development of a low noise 1.2 THz and 1.4 THz SIS mixers for heterodyne spectrometry on the Stratospheric Observatory For Infrared Astronomy (SOFIA) and Herschel Space Observatory. This frequency range is above the limit for the commonly used Nb quasi particle SIS junctions, and a special type of hybrid Nb/AlN/NbTiN junctions has been developed for this project. We are using a quasi-optical mixer design with two Nb/AlN/NbTiN junctions with an area of 0.25. The SIS junction tuning circuit is made of Nb and gold wire layers. At 1.13 THz the minimum SIS receiver uncorrected noise temperature is 450 K. The SIS receiver noise corrected for the loss in the LO coupler and in the cryostat optics is 350-450 K across 1.1-1.25 THz band. The receiver has a uniform sensitivity in a full 4-8 GHz IF band. The 1.4 THz SIS receiver test at 1.33-1.35 THz gives promising results, although limited by the level of available LO power. Extrapolation of the data obtained with low LO power level shows a possibility to reach 500 K DSB receiver noise using already existing SIS mixer.