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Physical review. B./Physical review. B

Bunching-antibunching crossover in a double S/N/N capacitively coupled single-electron transistor

Yukimi Kanai, Takeshi J. Inagaki, Megumu Mihata, Yuri Sawamura, Shuichi Iwabuchi

Published Jun 29, 2020• 0 citations
Publisher

Abstract

We present a Schwinger-Keldysh scheme theory for full counting statistics applicable to the solid-state entangler, which consists of two coupled superconducting/normal-conducting/normal-conducting capacitively coupled single-electron transistors (double S/N/N C-SET). We focus on the case when the superconducting gap energy is larger than the charging energy since flexible control of entanglement information can be expected by the charging effect for various bias conditions, and we study the double S/N/N C-SET with and without dissipative environment. We derive the cumulant generation function for the double S/N/N C-SET under current continuity conditions, from which arbitrary order of current noise cumulants are obtained. We explicitly show that the synchronized Coulomb oscillation, a celebrated experimental finding by Hofstetter et al. [Nature (London) 461, 960 (2009)], originate from the crossed Andreev current conveying quantum entanglement. We also investigate current in the double S/N/N C-SET, its current components, and the resulting cross-correlation of current noise ${S}_{\mathrm{LR}}(\ensuremath{\omega}=0)$ in the superconducting subgap region. It is shown that the bunching-antibunching nature strongly depends on the relative location of the Coulomb gap regions for the relevant current components since the bunching-antibunching nature is determined by the competition between the contributions of relevant current components. Depending on the bias conditions for each of the two C-SETs, ${S}_{\mathrm{LR}}(\ensuremath{\omega}=0)$ exhibits a sign crossover from positive (bunching) to negative (antibunching), which is followed by restoration to bunching correlations. The effect of the dissipative environment tends to reduce ${S}_{\mathrm{LR}}(\ensuremath{\omega}=0)$ because of a reduction in relevant currents. Although crossover and restoration become less conspicuous, the way the bunching-antibunching nature appears is essentially the same as in the case of the inductive environment.

DOI
10.1103/physrevb.101.245312

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We show how population inversion (PI) occurs in a two-level system (TLS) while measuring its charge using a capacitively coupled superconducting single-electron transistor (SSET), biased in the subgap regime, where the current through the SSET is carried by different cycles involving tunneling of both Cooper pairs and quasiparticles. The PI is directly associated with the resonant nature of the Cooper-pair tunneling. We also show how the SSET may strongly relax the TLS, although there is negligible current flowing through the SSET, i.e. it is turned off. The calculation of the quantum back-action noise is based on a real-time Keldysh approach. We specifically discuss the case of a Cooper Pair Box qubit with the SSET capacitively coupled as read-out device.
We calculate the full-frequency spectral density of voltage fluctuations in a single-electron transistor (SET), used as an electrometer biased above the Coulomb threshold so that the current through the SET is carried by sequential tunneling events. We consider both a normal-state SET and a superconducting SET. The whole spectrum, from low-frequency telegraph noise to quantum noise at frequencies comparable to the SET charging energy ${(E}_{C}/\ensuremath{\Elzxh})$ to high-frequency Nyquist noise, is described. We take the energy exchange between the SET and the measured system into account using a real-time diagrammatic Keldysh technique. The voltage fluctuations determine the backaction of the SET on the measured system, and we specifically discuss the case of superconducting charge qubit read-out and measuring the so-called Coulomb staircase of a single Cooper-pair box.
We investigate a superconducting single-electron transistor capacitively coupled to a nanomechanical oscillator and focus on the double Josephson quasiparticle resonance. The existence of two coherent Cooper-pair tunneling events is shown to lead to pronounced back action effects. Measuring the current and the shot noise provides a direct way of gaining information on the state of the oscillator. In addition to an analytical discussion of the linear-response regime, we discuss and compare results of higher-order approximation schemes and a fully numerical solution. We find that cooling of the mechanical resonator is possible and that there are driven and bistable oscillator states at low couplings. Finally, we also discuss the frequency dependence of the charge noise and the current noise of the superconducting single electron transistor.
We have directly measured the quantum noise of a superconducting single-electron transistor (S-SET) embedded in a microwave resonator consisting of a superconducting LC tank circuit. Using an effective bath description, we find that the S-SET provides damping of the resonator modes proportional to its differential conductance and has an effective temperature that depends strongly on the S-SET bias conditions. In the vicinity of a double Cooper pair resonance, when both resonances are red detuned the S-SET effective temperature can be well below both the ambient temperature and the energy scale of the bias voltage. When blue detuned, the S-SET shows negative differential conductivity,
Assuming the absence of 1/f noise, we have calculated the charge sensitivity (CS) of a capacitive-coupled double-junction single electron tunneling transistor (SETT) with a superconducting grain, operating at low temperature and low bias voltage such that the tunneling current is dominated by the Andreev process. In this case the effect of co-tunneling is suppressed without using the complicated fabrication method. We have used a realistic sample to demonstrate the procedure of optimizing the CS of a SETT with respect to relevant physical parameters and structure parameters. With the presently available fabrication technology, our theoretical analysis can serve as a guide for increasing the CS of a SETT beyond 10−6 e/√Hz.
We have developed a novel system consisting of a superconducting single-electron transistor (S-SET) coupled to a two-dimensional electron gas (2DEG), for which the dissipation can be tuned in the immediate vicinity of the S-SET. To analyze our results, we have developed a model of the environment for S-SET/2DEG systems that includes electromagnetic fluctuations coupled both through the S-SET leads and capacitively to the S-SET central island. We analyze this model, treating the leads as finite transmission lines, to find the probability function P(E) for exchanging energy E with the environment. We also allow for the possibility of low-frequency fluctuations of the S-SET offset charge. We compare our calculations with measurements of SET conductance versus 2DEG conductance and find good agreement for temperatures 100 mK, while unexplained discrepancies emerge for lower temperatures. By including the effects of charge averaging we are also able to predict the shape and evolution of IV curves as the 2DEG in the vicinity of the S-SET is changed.