Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

arXiv:cond-mat/0205382

Superconducting single-electron transistor coupled to a two dimensional electron gas: Transmission lines, dissipation, and charge averaging

A. J. Rimberg, Wei Dong Lu

Published May 17, 2002• 0 citations
arXivHTMLPDF

Abstract

We have developed a novel system consisting of a superconducting single-electron transistor (S-SET) coupled to a two-dimensional electron gas (2DEG), for which the dissipation can be tuned in the immediate vicinity of the S-SET. To analyze our results, we have developed a model of the environment for S-SET/2DEG systems that includes electromagnetic fluctuations coupled both through the S-SET leads and capacitively to the S-SET central island. We analyze this model, treating the leads as finite transmission lines, to find the probability function P(E) for exchanging energy E with the environment. We also allow for the possibility of low-frequency fluctuations of the S-SET offset charge. We compare our calculations with measurements of SET conductance versus 2DEG conductance and find good agreement for temperatures 100 mK, while unexplained discrepancies emerge for lower temperatures. By including the effects of charge averaging we are also able to predict the shape and evolution of IV curves as the 2DEG in the vicinity of the S-SET is changed.

DOI
10.48550/arxiv.cond-mat/0205382

Related papers

Superconducting Single-Electron Transistor in a Locally Tunable Electromagnetic Environment: Dissipation and Charge Fluctuations

Wei Dong Lu, Kevin D. Maranowski, A. J. Rimberg

We have developed a novel system consisting of a superconducting single-electron transistor (S-SET) coupled to a two-dimensional electron gas (2DEG), for which the dissipation can be tuned in the immediate vicinity of the S-SET. Within linear response, the S-SET conductance varies nonmonotonically with increasing 2DEG impedance. We find good agreement between our experimental results and a model incorporating electromagnetic fluctuations in both the S-SET leads and the 2DEG, as well as low-frequency switching of the S-SET offset charge.

arXiv:cond-mat/0204287•Apr 12, 2002•0 citations

Superconducting single-electron transistor coupled to a locally tunable electromagnetic environment

Wei Dong Lu, A. J. Rimberg, Kevin D. Maranowski

We have developed a system consisting of a superconducting single-electron transistor (S-SET) coupled to a two-dimensional electron gas (2DEG), for which the dissipation can be tuned in the immediate vicinity of the S-SET. Such tuning can be performed easily, and provides access to a significant range of environmental impedances. For temperatures above 100 mK, we find qualitative agreement between measured changes in the S-SET conductance versus dissipation and a model incorporating electromagnetic fluctuations in both the S-SET leads and the 2DEG.

Applied Physics Letters•Dec 19, 2002•5 citations

Effects of Dissipation on a Superconducting Single Electron Transistor

Jan B. Kycia, J. Chen, R. Therrien +4 more

We measure the effect of dissipation on the minimum zero-bias conductance, G(min)0, of a superconducting single electron transistor (sSET) capacitively coupled to a two-dimensional electron gas (2DEG) in a GaAs/AlGaAs heterostructure. Depleting the 2DEG with a back gate voltage decreases the dissipation experienced by the sSET in situ. We find that G(min)0 increases as the dissipation is increased or the temperature is reduced; the functional forms of these dependences are compared with the model of Wilhelm et al. in which the leads coupled to the sSET are represented by lossy transmission lines.

Physical Review Letters•Jun 13, 2001•28 citations

Electrical transport in a single-electron transistor coupled to a tunable environment

Wei Dong Lu

A novel model system is developed to study the effects of the environment on transport properties of a superconducting single-electron transistor (S-SET). The impedance of a two-dimensional electron gas (2DEG) 50 nm below the sample surface serving as the environment can be tuned in situ. A quantum dot is readily formed in the 2DEG. Josephson tunneling processes in the SET are suppressed and quasiparticle tunneling processes are enhanced as the 2DEG is confined. Important energetic parameters of the SET such as the charging energy $E\\sb{c}$ and superconducting energy gap $\\triangle$ remain almost unchanged in this process.

•Jan 1, 1999•0 citations

Charge transport processes in a superconducting single-electron transistor coupled to a microstrip transmission line

Wei Dong Lu, Kevin D. Maranowski, A. J. Rimberg

We have investigated charge transport processes in a superconducting single-electron transistor (S-SET) fabricated in close proximity to a two-dimensional electron gas (2DEG) in a GaAs/AlGaAs heterostructure. The macroscopic bonding pads of the S-SET along with the 2DEG form a microstrip transmission line. We observe a variety of current-carrying cycles in the S-SET which we attribute to simultaneous tunneling of Cooper pairs and emission of photons into the microstrip. We find good agreement between these experimental results and simulations including both photon emission and photon-assisted tunneling due to the electromagnetic environment.

arXiv:cond-mat/0110093•Physical review. B, Condensed matter•Jan 9, 2002•13 citations

Single-electron transistor: Effects of the environment and detecting electron motion in real time

Wei Dong Lu

This thesis will be divided into two parts. In the first part, theory and results of a novel system in which a superconducting single-electron transistor (S-SET) coupled to a two-dimensional electron gas (2DEG) serving as a tunable electromagnetic environment for the S-SET will be discussed, including effects of dissipation, resonant tunneling with photon emission, and photon-assisted tunneling. In the second part, we discuss the techniques for which the SET is incorporated in an RF resonant circuit, resulting in an ultra high charge sensitivity and bandwidth. After the 2DEG is confined into a quantum dot, random telegraph signals (RTS) caused by individual electrons tunneling on and off the dot have been observed. In the equilibrium configuration, the occupational probabilities of the charge states of the dot can be directly measured from the RTS and were found to follow a Fermi distribution. In the non-equilibrium configuration, the RTS correctly detected the onset of the current through the dot.

•Jan 1, 2003•0 citations
We have developed a novel system consisting of a superconducting single-electron transistor (S-SET) coupled to a two-dimensional electron gas (2DEG), for which the dissipation can be tuned in the immediate vicinity of the S-SET. To analyze our results, we have developed a model of the environment for S-SET/2DEG systems that includes electromagnetic fluctuations coupled both through the S-SET leads and capacitively to the S-SET central island. We analyze this model, treating the leads as finite transmission lines, to find the probability function P(E) for exchanging energy E with the environment. We also allow for the possibility of low-frequency fluctuations of the S-SET offset charge. We compare our calculations with measurements of SET conductance versus 2DEG conductance and find good agreement for temperatures 100 mK, while unexplained discrepancies emerge for lower temperatures. By including the effects of charge averaging we are also able to predict the shape and evolution of IV curves as the 2DEG in the vicinity of the S-SET is changed.
We have developed a novel system consisting of a superconducting single-electron transistor (S-SET) coupled to a two-dimensional electron gas (2DEG), for which the dissipation can be tuned in the immediate vicinity of the S-SET. Within linear response, the S-SET conductance varies nonmonotonically with increasing 2DEG impedance. We find good agreement between our experimental results and a model incorporating electromagnetic fluctuations in both the S-SET leads and the 2DEG, as well as low-frequency switching of the S-SET offset charge.
We have developed a system consisting of a superconducting single-electron transistor (S-SET) coupled to a two-dimensional electron gas (2DEG), for which the dissipation can be tuned in the immediate vicinity of the S-SET. Such tuning can be performed easily, and provides access to a significant range of environmental impedances. For temperatures above 100 mK, we find qualitative agreement between measured changes in the S-SET conductance versus dissipation and a model incorporating electromagnetic fluctuations in both the S-SET leads and the 2DEG.
We measure the effect of dissipation on the minimum zero-bias conductance, G(min)0, of a superconducting single electron transistor (sSET) capacitively coupled to a two-dimensional electron gas (2DEG) in a GaAs/AlGaAs heterostructure. Depleting the 2DEG with a back gate voltage decreases the dissipation experienced by the sSET in situ. We find that G(min)0 increases as the dissipation is increased or the temperature is reduced; the functional forms of these dependences are compared with the model of Wilhelm et al. in which the leads coupled to the sSET are represented by lossy transmission lines.
A novel model system is developed to study the effects of the environment on transport properties of a superconducting single-electron transistor (S-SET). The impedance of a two-dimensional electron gas (2DEG) 50 nm below the sample surface serving as the environment can be tuned in situ. A quantum dot is readily formed in the 2DEG. Josephson tunneling processes in the SET are suppressed and quasiparticle tunneling processes are enhanced as the 2DEG is confined. Important energetic parameters of the SET such as the charging energy EsbcE\\sb{c}Esbc and superconducting energy gap triangle\\triangletriangle remain almost unchanged in this process.
We have investigated charge transport processes in a superconducting single-electron transistor (S-SET) fabricated in close proximity to a two-dimensional electron gas (2DEG) in a GaAs/AlGaAs heterostructure. The macroscopic bonding pads of the S-SET along with the 2DEG form a microstrip transmission line. We observe a variety of current-carrying cycles in the S-SET which we attribute to simultaneous tunneling of Cooper pairs and emission of photons into the microstrip. We find good agreement between these experimental results and simulations including both photon emission and photon-assisted tunneling due to the electromagnetic environment.
This thesis will be divided into two parts. In the first part, theory and results of a novel system in which a superconducting single-electron transistor (S-SET) coupled to a two-dimensional electron gas (2DEG) serving as a tunable electromagnetic environment for the S-SET will be discussed, including effects of dissipation, resonant tunneling with photon emission, and photon-assisted tunneling. In the second part, we discuss the techniques for which the SET is incorporated in an RF resonant circuit, resulting in an ultra high charge sensitivity and bandwidth. After the 2DEG is confined into a quantum dot, random telegraph signals (RTS) caused by individual electrons tunneling on and off the dot have been observed. In the equilibrium configuration, the occupational probabilities of the charge states of the dot can be directly measured from the RTS and were found to follow a Fermi distribution. In the non-equilibrium configuration, the RTS correctly detected the onset of the current through the dot.