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Physical Review Applied

Characterizing Quantum Devices at Scale with Custom Cryo-CMOS

Sebastian Pauka, Kushal Das, J. M. Hornibrook, Geoffrey C. Gardner, Michael J. Manfra, Maja C. Cassidy, D. J. Reilly

Published May 28, 2020• 32 citations
Publisher

Abstract

We make use of a custom-designed cryo-CMOS multiplexer to enable multiple quantum devices to be characterized in a single cooldown of a dilution refrigerator. Combined with a packaging approach that integrates cryo-CMOS chips and a hot-swappable parallel-device test platform, we describe how this setup takes the standard wiring configuration of a dilution refrigerator as input and expands the capability for batch characterization of quantum devices at milli-Kelvin temperatures and high magnetic fields. The architecture of the cryo-CMOS multiplexer is discussed, and its performance is benchmarked using few-electron quantum dots and Hall mobility mapping measurements.

DOI
10.1103/physrevapplied.13.054072

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We make use of a custom-designed cryo-CMOS multiplexer to enable multiple quantum devices to be characterized in a single cooldown of a dilution refrigerator. Combined with a packaging approach that integrates cryo-CMOS chips and a hot-swappable parallel-device test platform, we describe how this setup takes the standard wiring configuration of a dilution refrigerator as input and expands the capability for batch characterization of quantum devices at milli-Kelvin temperatures and high magnetic fields. The architecture of the cryo-CMOS multiplexer is discussed, and its performance is benchmarked using few-electron quantum dots and Hall mobility mapping measurements.
Abstract Quantum computers based on solid state qubits have been a subject of rapid development in recent years. In current noisy intermediate-scale quantum technology, each quantum device is controlled and characterised through a dedicated signal line between room temperature and base temperature of a dilution refrigerator. This approach is not scalable and is currently limiting the development of large-scale quantum system integration and quantum device characterisation. Here we demonstrate a custom designed cryo-CMOS multiplexer operating at 32 mK. The multiplexer exhibits excellent microwave properties up to 10 GHz at room and millikelvin temperatures. We have increased the characterisation throughput with the multiplexer by measuring four high-quality factor superconducting resonators using a single input and output line in a dilution refrigerator. Our work lays the foundation for large-scale microwave quantum device characterisation and has the perspective to address the wiring problem of future large-scale quantum computers.
Most quantum computing platforms are nowadays operating at temperatures of a few Kelvin or lower, and their control and readout electronics are gradually brought close or to the same temperature stages. A pivotal step towards the design of such CMOS circuits is the NMOS and PMOS transistor characterization at cryogenic temperatures. While typically performed in cryogenic probe stations down to liquid helium temperature, the CMOS chip for quantum computing is cooled further along with the qubit sample in dilution refrigerators. Here we propose and discuss a wire-bonded and packaged CMOS characterization setup down to 10mK. Several NMOS and PMOS transistors with various aspect ratios of a 180nm CMOS series die were characterized, to develop a novel PDK model for circuit design.
Continuing advancements in quantum information processing have caused a paradigm shift from research mainly focused on testing the reality of quantum mechanics to engineering qubit devices with numbers required for practical quantum computation.One of the major challenges in scaling toward large-scale solid-state systems is the limited input/output (I/O) connectors present in cryostats operating at sub-kelvin temperatures required to execute quantum logic with high-fidelity.This interconnect bottleneck is equally present in the device fabrication-measurement cycle, which requires high-throughput and cryogenic characterization to develop quantum processors.Here we multiplex quantum transport of two-dimensional electron gases at sub-kelvin temperatures.We use commercial off-the-shelf CMOS multiplexers to achieve an order of magnitude increase in the number of wires.Exploiting this technology we advance 300 mm epitaxial wafers manufactured in an industrial CMOS fab to a record electron mobility of (3.9±0.6)×10 5 cm 2 /Vs and percolation density of (6.9±0.4)×10 10 cm -2 , representing a key step toward large silicon qubit arrays.We envision that the demonstration will inspire the development of cryogenic electronics for quantum information and because of the simplicity of assembly, low-cost, yet versatility, we foresee widespread use of similar cryo-CMOS circuits for high-throughput quantum measurements and control of quantum engineered systems.
Abstract Continuing advancements in quantum information processing have caused a paradigm shift from research mainly focused on testing the reality of quantum mechanics to engineering qubit devices with numbers required for practical quantum computation. One of the major challenges in scaling toward large-scale solid-state systems is the limited input/output (I/O) connectors present in cryostats operating at sub-kelvin temperatures required to execute quantum logic with high fidelity. This interconnect bottleneck is equally present in the device fabrication-measurement cycle, which requires high-throughput and cryogenic characterization to develop quantum processors. Here we multiplex quantum transport of two-dimensional electron gases at sub-kelvin temperatures. We use commercial off-the-shelf CMOS multiplexers to achieve an order of magnitude increase in the number of wires. Exploiting this technology, we accelerate the development of 300 mm epitaxial wafers manufactured in an industrial CMOS fab and report a remarkable electron mobility of (3.9 ± 0.6) × 105 cm2/Vs and percolation density of (6.9 ± 0.4) × 1010 cm−2, representing a key step toward large silicon qubit arrays. We envision that the demonstration will inspire the development of cryogenic electronics for quantum information, and because of the simplicity of assembly and versatility, we foresee widespread use of similar cryo-CMOS circuits for high-throughput quantum measurements and control of quantum engineered systems.
A scaled-up quantum computer will require a highly efficient control interface that autonomously manipulates and reads out large numbers of qubits, which for solid-state implementations are usually held at millikelvin (mK) temperatures. Advanced CMOS technology, tightly integrated with the quantum system, would be ideal for implementing such a control interface but is generally discounted on the basis of its power dissipation that leads to heating of the fragile qubits. Here, we demonstrate an ultra low power, CMOS-based quantum control platform that takes digital commands as input and generates many parallel qubit control signals. Realized using 100,000 transistors operating near 100 mK, our platform alleviates the need for separate control lines to every qubit by exploiting the low leakage of transistors at cryogenic temperatures to store charge on floating gate structures that are used to tune-up quantum devices. This charge can then be rapidly shuffled between on-chip capacitors to generate the fast voltage pulses required for dynamic qubit control. We benchmark this architecture on a quantum dot test device, showing that the control of thousands of gate electrodes is feasible within the cooling power of commercially available dilution refrigerators.
Rapid thermal cycling is a central bottleneck in the development of superconducting quantum devices: conventional dilution refrigerators require cooldowns of a day or more and substantial cryogenic infrastructure, which throttles the fabricate-measure-redesign loop. We present an ultracompact dilution refrigerator (3 kg in mass and 100 mm in diameter) that completes a full cooldown-warm-up cycle to a base temperature of 70 mK in 1.2 hours when unloaded, and in 2.1 hours when fully equipped with the microwave wiring required for qubit measurements, while delivering 20 microW of cooling power at 100 mK. We validate the platform through a complete characterization of a two-fluxonium device: we extract the full circuit Hamiltonian by two-tone spectroscopy, measure energy-relaxation and coherence times, and benchmark single-qubit control. Although the relaxation time is limited by the base temperature of the system, we reach a single-qubit gate fidelity of up to 99%, at the coherence limit set by our operating temperature. These results demonstrate that compact, fast-cycling dilution refrigeration can support state-of-the-art quantum-device characterization without sacrificing measurement quality, offering a practical route to high-throughput quantum-hardware development.