Multiplexed quantum transport using commercial off-the-shelf CMOS at sub-kelvin temperatures
Brian Paquelet Wuetz, Peter L. Bavdaz, LaReine A. Yeoh, Raymond N. Schouten, H. van der Does, M. J. Tiggelman, Diego Sabbagh, Amir Sammak, C. G. Almudever, Fabio Sebastiano, J. S. Clarke, Menno Veldhorst, Giordano Scappucci
Abstract Continuing advancements in quantum information processing have caused a paradigm shift from research mainly focused on testing the reality of quantum mechanics to engineering qubit devices with numbers required for practical quantum computation. One of the major challenges in scaling toward large-scale solid-state systems is the limited input/output (I/O) connectors present in cryostats operating at sub-kelvin temperatures required to execute quantum logic with high fidelity. This interconnect bottleneck is equally present in the device fabrication-measurement cycle, which requires high-throughput and cryogenic characterization to develop quantum processors. Here we multiplex quantum transport of two-dimensional electron gases at sub-kelvin temperatures. We use commercial off-the-shelf CMOS multiplexers to achieve an order of magnitude increase in the number of wires. Exploiting this technology, we accelerate the development of 300 mm epitaxial wafers manufactured in an industrial CMOS fab and report a remarkable electron mobility of (3.9 ± 0.6) × 105 cm2/Vs and percolation density of (6.9 ± 0.4) × 1010 cm−2, representing a key step toward large silicon qubit arrays. We envision that the demonstration will inspire the development of cryogenic electronics for quantum information, and because of the simplicity of assembly and versatility, we foresee widespread use of similar cryo-CMOS circuits for high-throughput quantum measurements and control of quantum engineered systems.
Abstract Continuing advancements in quantum information processing have caused a paradigm shift from research mainly focused on testing the reality of quantum mechanics to engineering qubit devices with numbers required for practical quantum computation. One of the major challenges in scaling toward large-scale solid-state systems is the limited input/output (I/O) connectors present in cryostats operating at sub-kelvin temperatures required to execute quantum logic with high fidelity. This interconnect bottleneck is equally present in the device fabrication-measurement cycle, which requires high-throughput and cryogenic characterization to develop quantum processors. Here we multiplex quantum transport of two-dimensional electron gases at sub-kelvin temperatures. We use commercial off-the-shelf CMOS multiplexers to achieve an order of magnitude increase in the number of wires. Exploiting this technology, we accelerate the development of 300 mm epitaxial wafers manufactured in an industrial CMOS fab and report a remarkable electron mobility of (3.9 ± 0.6) × 105 cm2/Vs and percolation density of (6.9 ± 0.4) × 1010 cm−2, representing a key step toward large silicon qubit arrays. We envision that the demonstration will inspire the development of cryogenic electronics for quantum information, and because of the simplicity of assembly and versatility, we foresee widespread use of similar cryo-CMOS circuits for high-throughput quantum measurements and control of quantum engineered systems.
Continuing advancements in quantum information processing have caused a paradigm shift from research mainly focused on testing the reality of quantum mechanics to engineering qubit devices with numbers required for practical quantum computation.One of the major challenges in scaling toward large-scale solid-state systems is the limited input/output (I/O) connectors present in cryostats operating at sub-kelvin temperatures required to execute quantum logic with high-fidelity.This interconnect bottleneck is equally present in the device fabrication-measurement cycle, which requires high-throughput and cryogenic characterization to develop quantum processors.Here we multiplex quantum transport of two-dimensional electron gases at sub-kelvin temperatures.We use commercial off-the-shelf CMOS multiplexers to achieve an order of magnitude increase in the number of wires.Exploiting this technology we advance 300 mm epitaxial wafers manufactured in an industrial CMOS fab to a record electron mobility of (3.9±0.6)×10 5 cm 2 /Vs and percolation density of (6.9±0.4)×10 10 cm -2 , representing a key step toward large silicon qubit arrays.We envision that the demonstration will inspire the development of cryogenic electronics for quantum information and because of the simplicity of assembly, low-cost, yet versatility, we foresee widespread use of similar cryo-CMOS circuits for high-throughput quantum measurements and control of quantum engineered systems.
Abstract The most promising quantum algorithms require quantum processors that host millions of quantum bits when targeting practical applications1. A key challenge towards large-scale quantum computation is the interconnect complexity. In current solid-state qubit implementations, an important interconnect bottleneck appears between the quantum chip in a dilution refrigerator and the room-temperature electronics. Advanced lithography supports the fabrication of both control electronics and qubits in silicon using technology compatible with complementary metal oxide semiconductors (CMOS)2. When the electronics are designed to operate at cryogenic temperatures, they can ultimately be integrated with the qubits on the same die or package, overcoming the ‘wiring bottleneck’3–6. Here we report a cryogenic CMOS control chip operating at 3 kelvin, which outputs tailored microwave bursts to drive silicon quantum bits cooled to 20 millikelvin. We first benchmark the control chip and find an electrical performance consistent with qubit operations of 99.99 per cent fidelity, assuming ideal qubits. Next, we use it to coherently control actual qubits encoded in the spin of single electrons confined in silicon quantum dots7–9 and find that the cryogenic control chip achieves the same fidelity as commercial instruments at room temperature. Furthermore, we demonstrate the capabilities of the control chip by programming a number of benchmarking protocols, as well as the Deutsch–Josza algorithm10, on a two-qubit quantum processor. These results open up the way towards a fully integrated, scalable silicon-based quantum computer.
Quantum computing holds the potential to solve problems beyond the capabilities of classical computers. However, realizing practical large-scale quantum computers faces critical challenges, including the key bottleneck in wiring quantum processors operating at cryogenic temperatures to their room temperature control electronics. This article explores cryo-CMOS ICs as an enabling technology to circumvent such a wiring bottleneck. After reviewing the basics of quantum computing and the behavior of CMOS devices at cryogenic temperatures, the requirements for the interface electronics for superconducting and semiconductor qubits are discussed, and state-of-the-art cryo-CMOS circuit solutions are briefly described, including a few hints to other qubit platforms. Finally, the article concludes with an overview of future challenges to be addressed to realize the vision of cryo-CMOS technology as an enabler of large-scale quantum computers with practical applications.
Quantum computers1 could revolutionize computing in a profound way due to the massive speedup they promise. A quantum computer comprises a cryogenic quantum processor and a classical electronic controller. When scaling up the cryogenic quantum processor to at least a few thousands, and possibly millions, of qubits required for any practical quantum algorithm, cryogenic CMOS (cryo-CMOS) electronics is required to allow feasible and compact interconnections between the controller and the quantum processor. Cryo-CMOS leverages the CMOS fabrication infrastructure while exploiting the continuous improvement of performance and miniaturization guaranteed by Moore's law, in order to enable the fabrication of a cost-effective practical quantum computer. However, designing cryo-CMOS integrated circuits requires a new set of CMOS device models, their embedding in design and verification tools, and the possibility to co-simulate the cryo-CMOS/quantum-processor architecture for full-system optimization. In this paper, we address these challenges by focusing on their impact on the design of complex cryo-CMOS systems.
Solid-state quantum computers require classical electronics to control and readout individual qubits and to enable fast classical data processing [1-3]. Integrating both subsystems at deep cryogenic temperatures [4], where solid-state quantum processors operate best, may solve some major scaling challenges, such as system size and input/output (I/O) data management [5]. Spin qubits in silicon quantum dots (QDs) could be monolithically integrated with complementary metal-oxide-semiconductor (CMOS) electronics using very-large-scale integration (VLSI) and thus leveraging over wide manufacturing experience in the semiconductor industry [6]. However, experimental demonstrations of integration using industrial CMOS at mK temperatures are still in their infancy. Here we present a cryogenic integrated circuit (IC) fabricated using industrial CMOS technology that hosts three key ingredients of a silicon-based quantum processor: QD arrays (arranged here in a non-interacting 3x3 configuration), digital electronics to minimize control lines using row-column addressing and analog LC resonators for multiplexed readout, all operating at 50 mK. With the microwave resonators (6-8 GHz range), we show dispersive readout of the charge state of the QDs and perform combined time- and frequency-domain multiplexing, enabling scalable readout while reducing the overall chip footprint. This modular architecture probes the limits towards the realization of a large-scale silicon quantum computer integrating quantum and classical electronics using industrial CMOS technology.
Abstract Realizing a practically useful superconducting quantum computer will require a dramatic scale-up of quantum control electronics to meet the growth in required qubit counts. Conventional rack-based room-temperature control electronics impose severe constraints on wiring density, cost, and system footprint, creating a barrier to large-scale and fault-tolerant quantum computing. Here we demonstrate a hybrid quantum control architecture that combines cryogenic complementary metal-oxide semiconductor (cryo‑CMOS) application-specific integrated circuits (ASICs) for two‑qubit flux control with room‑temperature radio‑frequency electronics for single‑qubit control and readout. The resulting system achieves high density and scalable quantum control without compromising two‑qubit gate fidelity. Deployed on a 156‑qubit quantum processor, the cryo-CMOS subsystem achieves two‑qubit gate errors at the {10}^{-3} level, with a best randomized benchmarking error per gate of 8.4\times{10}^{-4}, stable operation over multi‑day timescales, and no measurable performance degradation as we increase the temperature of the cryo-CMOS ASICs from 7 to 20 K. Thermal analysis identifies cryo-CMOS chip operation near 20 K as a favorable regime, enabling efficient cooling of a large number of channels per cryostat. Compared against rack‑based flux-control, the cryo-CMOS subsystem achieves statistically indistinguishable two-qubit gate fidelities under matched gate settings and enables a tenfold improvement in system spatial footprint. These results establish cryo‑CMOS flux control as a practical and scalable foundation for large‑scale and fault-tolerant superconducting quantum systems.