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Softwaretechnik-Trends

Submillimeter Waveguide SIS Mixer with Full NbN Circuit (Late News Paper)

Alexandre Karpov, B. Plathner, J. Blondel, Matthias Schicke, K. H. Gundlach

Published Mar 1, 1996• 0 citations
OpenAlex

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•Jan 1, 2000•0 citations

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NbN/AIN/NbN Tunnel Junctions Applied as Terahertz SIS Mixers

Zhen Wang, Yoshinori Uzawa, Akira Kawakami

IEICE Transactions on Electronics•Oct 25, 1997•3 citations

0.5-THz waveguide SIS mixers with NbN/AlN/NbN technology - art. no. 684013

Jing Li, Takeda Masanon, Zhen Wang

Heterodyne mixers based on superconducting SIS (superconductor-insulator-superconductor) tunnel junctions have been demonstrated to be the most sensitive coherent detectors at millimeter and submillimeter wavelengths. In fact, conventional superconducting SIS mixers with Nb/AIO(x)/Nb junction and Nb/SiO2/Nb tuning circuit have shown good performances with the noise temperature reaching as low as three times the quantum limit below 0.7THz, which is the gap frequency of Nb-based SIS junctions. However, due to the large loss in Nb thin-film superconducting microstrip lines, the noise performance of Nb SIS mixers deteriorates significantly above 0.7THz. With a gap frequency double that of Nb-based SIS junctions, NbN-based SIS junctions are of particular interest for the development of heterodyne mixers in the terahertz region.

•Jan 1, 2008•0 citations
Heterodyne mixers based on superconducting SIS (superconductor-insulator-superconductor) tunnel junctions have been demonstrated to be the most sensitive coherent detectors at millimeter and submillimeter wavelengths. In fact, conventional superconducting SIS mixers with Nb/AIO(x)/Nb junction and Nb/SiO2/Nb tuning circuit have shown good performances with the noise temperature reaching as low as three times the quantum limit below 0.7THz, which is the gap frequency of Nb-based SIS junctions. However, due to the large loss in Nb thin-film superconducting microstrip lines, the noise performance of Nb SIS mixers deteriorates significantly above 0.7THz. With a gap frequency double that of Nb-based SIS junctions, NbN-based SIS junctions are of particular interest for the development of heterodyne mixers in the terahertz region.