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International Journal of Infrared and Millimeter Waves

A Tuning Circuit with Two Half-Wave Distributed Junctions for All-NbN SIS Mixers

Yoshinori Uzawa, Mahoto Takeda, Akira Kawakami, Z. Wang

Published Oct 1, 2003• 8 citations
Publisher
DOI
10.1023/a:1026051805130

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Design and analysis of an All-NbN SIS mixer using a tuning circuit with two half-wavelength distributed junctions

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We have designed an all-NbN superconductor-insulator-superconductor mixer with a broadband tuning circuit for the terahertz band, which enables the use of junctions with a lower current density. It uses the reactance compensation efficiently produced by two half-wavelength distributed junctions connected by a half-wavelength microstripline. Based on the design and simulated noise performance, a tuning circuit using NbN junctions with a current density of 25 kA/cm/sup 2/ should be able to cover the 780-950 GHz band with an SSB receiver noise temperature below 4hfk/sub B/.

IEEE Transactions on Applied Superconductivity•Jun 1, 2003•7 citations
We have designed an all-NbN superconductor-insulator-superconductor mixer with a broadband tuning circuit for the terahertz band, which enables the use of junctions with a lower current density. It uses the reactance compensation efficiently produced by two half-wavelength distributed junctions connected by a half-wavelength microstripline. Based on the design and simulated noise performance, a tuning circuit using NbN junctions with a current density of 25 kA/cm/sup 2/ should be able to cover the 780-950 GHz band with an SSB receiver noise temperature below 4hfk/sub B/.