Abstract We are developing a single-ion optical clock based on a surface-electrode (SE) trap that we will operate with 171Yb+ ions on the electric quadrupole transition at 435.5 nm. We present heating rate measurements performed with a prototype SE trap. We also introduce a new, micro-fabricated SE trapping chip using silicon on insulator technology. Electric tests were performed under ultra-high vacuum using a testing chip, including breakdown voltages measurements and flashover detection. We present suitable trapping parameters for this chip, as well as a road-map for improving its design.Abstract We are developing a single-ion optical clock based on a surface-electrode (SE) trap that we will operate with 171Yb+ ions on the electric quadrupole transition at 435.5 nm. We present heating rate measurements performed with a prototype SE trap. We also introduce a new, micro-fabricated SE trapping chip using silicon on insulator technology. Electric tests were performed under ultra-high vacuum using a testing chip, including breakdown voltages measurements and flashover detection. We present suitable trapping parameters for this chip, as well as a road-map for improving its design.

arXiv:2410.06639Journal of Physics Conference SeriesNov 1, 20240 citations

Sympathetic cooling of molecular ions in a surface-electrode ion trap

Arezoo Mokhberi, Stefan Willitsch

We report the sympathetic cooling and Coulomb crystallization of molecular ions above the surface of an ion-trap chip. ${\mathrm{N}}_{2}^{+}$ and ${\mathrm{CaH}}^{+}$ ions were confined in a surface-electrode radio-frequency (rf) ion trap and cooled by the interaction with laser-cooled ${\mathrm{Ca}}^{+}$ ions to secular translational temperatures in the millikelvin range. The configuration of trapping potentials generated by the surface electrodes enabled the formation of planar bicomponent Coulomb crystals and the spatial separation of the molecular from the atomic ions on the chip. The structural and thermal properties of the Coulomb crystals were characterized using molecular dynamics simulations. The present study extends chip-based trapping techniques to cold molecular ions with potential applications in mass spectrometry, chemistry, quantum information science, and spectroscopy.We report the sympathetic cooling and Coulomb crystallization of molecular ions above the surface of an ion-trap chip. ${\mathrm{N}}_{2}^{+}$ and ${\mathrm{CaH}}^{+}$ ions were confined in a surface-electrode radio-frequency (rf) ion trap and cooled by the interaction with laser-cooled ${\mathrm{Ca}}^{+}$ ions to secular translational temperatures in the millikelvin range. The configuration of trapping potentials generated by the surface electrodes enabled the formation of planar bicomponent Coulomb crystals and the spatial separation of the molecular from the atomic ions on the chip. The structural and thermal properties of the Coulomb crystals were characterized using molecular dynamics simulations. The present study extends chip-based trapping techniques to cold molecular ions with potential applications in mass spectrometry, chemistry, quantum information science, and spectroscopy.

arXiv:1404.4292Physical Review AAug 4, 201410 citations

Fast Ion Transport in a Surface Electrode Trap

Susanna Todaro, D. H. Slichter, David J. Wineland +2 more

Bulletin of the American Physical SocietyMay 28, 20190 citations

Confining an ion in a surface electrode ion trap

Paige Robichaud

Bulletin of the American Physical SocietyJan 24, 20210 citations

A Silicon Surface Ion-Trap Chip with Dielectric Sidewalls Shielded by Metal Films

홍석준

An ion trap is a device to confine charged particles by utilizing electromagnetic fields.Since the trapped ions have a feasibility of the individual state manipulation, a long coherence time, and an ideal isolation from the surroundings, the ion-trap technology becomes one of the leading candidates for the physical implementation of quantum information processing.In order to build a large-scale integrated iontrap system for realizing complex quantum algorithms, microfabrication technologies have been applied to construct ion traps.The use of micro-electromechanical system (MEMS) ion-trap chip allows a scalable architecture of ion-trap arrays and integration of functional components to the trap chip, but a few side effects also arise.One of the most particular problems is stray fields generated by the charges accumulated on the sidewalls of thick dielectric pillars or the native oxide grown on metal surfaces, since the stray fields lead to ion micromotions which can cause heating and escape of the trapped ions.This dissertation presents a silicon surface ion-trap chip with dielectric sidewalls shielded by metal films.The oxide pillars supporting the top electrodes are fabricated to have overhang structures, and the upper and lower part of the pillars are coated by separate aluminum layers which are electrically isolated from each other.In order to evaluate the effects of the native ii metal oxide on the electrode surface to the charging phenomenon, a trap chip with an additional gold layer on the aluminum electrodes is also fabricated.An ultra-high vacuum (UHV) chamber, electrical connections, and an optical setup are prepared to trap 174 Yb + ions, and the ions are successfully trapped by using the experimental setup including the fabricated ion-trap chip.To evaluate the effectiveness of the proposed electrode structures, charging is intentionally induced on the chip surface by injecting a 355-nm pulse laser with 40-μW power perpendicularly to the chip surface.The intensity of the stray field is estimated by measuring the displacement of ion position after charging is induced.When the Al-based chips with exposed and Al-coated dielectric sidewalls are used, the standard deviation of the intensities of stray fields are 3.53, and 5.63 V/m, respectively.However, the standard deviation of the intensity of stray fields in the case of using Au-coated chip is 1.56 V/m, and any stray field is measured when the laser was injected on the surface or sidewalls of the gold-coated electrodes.These experimental results indicate that the gold coating on the surface of the aluminum electrodes and the sidewalls of dielectric pillars is effective for eliminating the generation of stray fields induced by static charges.An ion trap is a device to confine charged particles by utilizing electromagnetic fields.Since the trapped ions have a feasibility of the individual state manipulation, a long coherence time, and an ideal isolation from the surroundings, the ion-trap technology becomes one of the leading candidates for the physical implementation of quantum information processing.In order to build a large-scale integrated iontrap system for realizing complex quantum algorithms, microfabrication technologies have been applied to construct ion traps.The use of micro-electromechanical system (MEMS) ion-trap chip allows a scalable architecture of ion-trap arrays and integration of functional components to the trap chip, but a few side effects also arise.One of the most particular problems is stray fields generated by the charges accumulated on the sidewalls of thick dielectric pillars or the native oxide grown on metal surfaces, since the stray fields lead to ion micromotions which can cause heating and escape of the trapped ions.This dissertation presents a silicon surface ion-trap chip with dielectric sidewalls shielded by metal films.The oxide pillars supporting the top electrodes are fabricated to have overhang structures, and the upper and lower part of the pillars are coated by separate aluminum layers which are electrically isolated from each other.In order to evaluate the effects of the native ii metal oxide on the electrode surface to the charging phenomenon, a trap chip with an additional gold layer on the aluminum electrodes is also fabricated.An ultra-high vacuum (UHV) chamber, electrical connections, and an optical setup are prepared to trap 174 Yb + ions, and the ions are successfully trapped by using the experimental setup including the fabricated ion-trap chip.To evaluate the effectiveness of the proposed electrode structures, charging is intentionally induced on the chip surface by injecting a 355-nm pulse laser with 40-μW power perpendicularly to the chip surface.The intensity of the stray field is estimated by measuring the displacement of ion position after charging is induced.When the Al-based chips with exposed and Al-coated dielectric sidewalls are used, the standard deviation of the intensities of stray fields are 3.53, and 5.63 V/m, respectively.However, the standard deviation of the intensity of stray fields in the case of using Au-coated chip is 1.56 V/m, and any stray field is measured when the laser was injected on the surface or sidewalls of the gold-coated electrodes.These experimental results indicate that the gold coating on the surface of the aluminum electrodes and the sidewalls of dielectric pillars is effective for eliminating the generation of stray fields induced by static charges.

Jan 1, 20170 citations

We report the sympathetic cooling and Coulomb crystallization of molecular ions above the surface of an ion-trap chip.

{\mathrm{N}}_{2}^{+}

and

{\mathrm{CaH}}^{+}

ions were confined in a surface-electrode radio-frequency (rf) ion trap and cooled by the interaction with laser-cooled

{\mathrm{Ca}}^{+}

ions to secular translational temperatures in the millikelvin range. The configuration of trapping potentials generated by the surface electrodes enabled the formation of planar bicomponent Coulomb crystals and the spatial separation of the molecular from the atomic ions on the chip. The structural and thermal properties of the Coulomb crystals were characterized using molecular dynamics simulations. The present study extends chip-based trapping techniques to cold molecular ions with potential applications in mass spectrometry, chemistry, quantum information science, and spectroscopy.