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Optical and Quantum Sensing and Precision Metrology II

Engineering diamond color centers for quantum sensing and metrology (Conference Presentation)

Philip Hemmer

Published Mar 9, 2020• 0 citations
Publisher

Abstract

I discuss new ways to grow diamond that promise near-deterministic design of fluorescent color-centers, optimized for quantum sensing and metrology applications. The key is to grow diamond from organic molecules at a low enough temperature such that only some of the molecules decompose. This approach gives unprecedented control over the properties of diamond color centers by decoupling diamond-growth from color-center creation. In addition, low growth temperature produces high quality diamonds and allows a wider choice of growth pressures than is currently believed possible.

DOI
10.1117/12.2550410

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I discuss new ways to grow diamond that promise near-deterministic design of fluorescent color-centers, optimized for quantum sensing and metrology applications. The key is to grow diamond from organic molecules at a low enough temperature such that only some of the molecules decompose. This approach gives unprecedented control over the properties of diamond color centers by decoupling diamond-growth from color-center creation. In addition, low growth temperature produces high quality diamonds and allows a wider choice of growth pressures than is currently believed possible.
I discuss new ways to grow diamond that promise near-deterministic design of fluorescent color-centers, optimized for quantum sensing applications. Briefly diamonds are grown around diamond-like organic seed molecules that have the dopant atoms needed for specific color centers, located in the correct approximate locations. It can be seen that this approach can give unprecedented control over the number and placement of color centers. Complete quantum registers might also be fabricated, for example a nitrogen-vacancy and at 13C atom with a well-defined separation surrounded by only 12C diamond. In this talk I will discuss our first key success, which is growing diamonds under conditions where the seed molecules are stable, as well as current experiments.
The performance of diamond color centers for quantum information and sensing depends strongly on the quality of the material. Specifically, ultra-pure, low-strain diamond is preferred. However, in order to create color centers, non-carbon atoms must be incorporated into the lattice either by rapid growth or implantation. Both these techniques cause defects and lattice damage that degrades ultimate performance. To overcome these problems, we show a molecule-seeded growth technique that decouples the doping and growth processes. The result is near-deterministic creation of specific color centers in chemically pure, low-strain diamond. Data showing selective growth of H3 and NV centers will be presented, where the NV is used to verify that the crystals are low-strain. Future application to other color centers like silicon, germanium, and tin vacancies will be discussed. Also the possibility of direct growth of more complex quantum registers.
Diamond optical emitters have been explored extensively in recent years for applications to quantum information and processing. Recently they have also been considered for quantum sensing, especially as nanocrystals in biological systems. However, for most of these applications, the performance of the diamond optical emitters is sensitive to the quality of the material. However, there are still important problems that still must be solved in order to realize the full potential of diamond. For example, existing growth and processing techniques (including ion implantation) are fundamentally probabilistic in nature and so cannot easily produce scalable quantum systems. To overcome these problems, we show a molecule-seeded growth technique that decouples the doping and growth processes. The result is near-deterministic creation of specific color centers in chemically pure, low-strain diamond.
Diamond color centers like the nitrogen-vacancy (NV) have shown much promise for nanoscale sensing of magnetic and electric fields and temperature. So far however the quantum properties of the NV have not been used to full advantage, for example quantum entanglement of NV qubits has rarely been used for sensing. In this talk I will review recent advances in the fabrication of NVs, and other magnetic color centers in diamond, and in the growth of high quality nanodiamonds. Combining these advances, I will discuss the future prospects of engineering quantum-enhanced sensors in nanodiamonds.
New color centers are being discovered in diamond every year. For the most part these are guided by the desire to replace the silicon-vacancy (SiV) by emitters with higher quantum efficiency and longer storage times. I will discuss color centers produced by some of the most recently implanted elements into diamond including Ge, Sn, Pb, Mg. I will also discuss the rationale for elements to be implanted soon. Finally I will also discuss new options for the future, including designer color centers made possible by novel diamond growth techniques.
Progress in controlling diamond synthesis has made it possible to produce very pure crystals and to incorporate and control atomic impurities and carbon vacancies in the crystal lattice. The appropriate impurity-vacancy combinations can give rise to special defects known as color centers, such as the nitrogen-vacancy (NV) or the silicon-vacancy (SiV), which exhibit exceptional quantum properties with spins that are optically addressable. The use of diamond containing color centers has paved the way for the development of innovative quantum technologies, such as very high-resolution magnetometry and quantum information processing. Nevertheless, the development of quantum sensors at the nanometric scale remains one of the most interesting challenges. In this context, the development of a reliable nanoparticle synthesis technique that allows the desired defects to be incorporated and their quantum optical properties to be modulated is crucial. In this seminar, an efficient and recent method to produce diamond nanoparticles containing NV, SiV and germanium-vacancy (GeV) centers is proposed through direct plasma assisted chemical vapour deposition (CVD) growth. This technique allows good control of both nanoparticle growth processes and color centers formation. The optimization of the CVD nanodiamond growth process is presented, showing the impact of different plasma parameters and gas phasecomposition on nanoparticle crystallinity, size and shape. Morphological characterizations reveal the production of small (around 100 nm) and well faceted nanodiamond particles. In addition, the SiV and GeV color centers incorporation can be tuned within this material by varying the gas phase composition which emphasizes the high flexibility of the CVD growth technique. Finally, the quantum properties of the incorporated color centers have been successfully investigated under extreme pressure conditions (up to ~ 180 GPa) showing a monotonic blue shift of their optical zero-phonon line. Since their luminescence remains stable, SiV and GeV centers emerge as high-pressure nanosensors.