Vertically coupled InGaAs quantum dots with electric field for quantum gate operations

Gabriel Bester, Alex Zunger

W. Ben Chouikha, S. Jaziri, R. Bennaceur

Chun-Hua Yuan, Ka‐Di Zhu, Yiwen Jiang

Tunneling-induced transparency in vertically coupled InGaAs/GaAs quantum dots using tunneling instead of pump laser, analogous to electromagnetically induced transparency in atomic systems, is studied. The interdot quantum coupling strength is tuned by static electric fields. The group velocity slow-down factor is theoretically analyzed as a function of electron tunneling at different broadened linewidths. For parameters appropriate to a 100 Gbits/s optical network, group velocities as low as 850 m/s are calculated. The scheme is expected to be useful to construct a variable semiconductor optical buffer based on electromagnetically induced transparency in vertically coupled InGaAs/GaAs quantum dots controlled by electric fields.

G. Ortner, M. Bayer, Yuli B. Lyanda-Geller +4 more

Controllable interactions that couple quantum dots are a key requirement in the search for scalable solid state implementations for quantum information technology. From optical studies of excitons and corresponding calculations, we demonstrate that an electric field on vertically coupled pairs of In(0.6)Ga(0.4)As/GaAs quantum dots controls the mixing of the exciton states on the two dots and also provides controllable coupling between carriers in the dots.

Tetsufumi Tanamoto

Marcinkevicius, Gusterov, Reithmaier