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Advanced Photonics

Photodynamics and quantum efficiency of germanium vacancy color centers in diamond

Minh Nguyen, Niko Nikolay, Carlo Bradac, Mehran Kianinia, Евгений Алексеевич Екимов, Noah Mendelson, Oliver J. Benson, Igor Aharonovich

Published Dec 26, 2019• 28 citations
Publisher

Abstract

Color centers in diamond—especially group IV defects—have been advanced as a viable solid-state platform for quantum photonics and information technologies. We investigate the photodynamics and characteristics of germanium-vacancy (GeV) centers hosted in high-pressure high-temperature diamond nanocrystals. Through back-focal plane imaging, we analyze the far-field radiation pattern of the investigated emitters and derive a crossed-dipole emission, which is strongly aligned along one axis. We use this information in combination with lifetime measurements to extract the decay rate statistics of the GeV emitters and determine their quantum efficiency, which we estimated to be ∼ ( 22 ± 2 ) % . Our results offer further insight into the photodynamic properties of the GeV center in nanodiamonds and confirm its suitability as a desirable system for quantum technologies.

DOI
10.1117/1.ap.1.6.066002

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Color centers in diamond—especially group IV defects—have been advanced as a viable solid-state platform for quantum photonics and information technologies. We investigate the photodynamics and characteristics of germanium-vacancy (GeV) centers hosted in high-pressure high-temperature diamond nanocrystals. Through back-focal plane imaging, we analyze the far-field radiation pattern of the investigated emitters and derive a crossed-dipole emission, which is strongly aligned along one axis. We use this information in combination with lifetime measurements to extract the decay rate statistics of the GeV emitters and determine their quantum efficiency, which we estimated to be ∼ ( 22 ± 2 ) % . Our results offer further insight into the photodynamic properties of the GeV center in nanodiamonds and confirm its suitability as a desirable system for quantum technologies.
Atomic-sized fluorescent defects in diamond are widely recognized as a promising solid state platform for quantum cryptography and quantum information processing. For these applications, single photon sources with a high intensity and reproducible fabrication methods are required. In this study, we report a novel color center in diamond, composed of a germanium (Ge) and a vacancy (V) and named the GeV center, which has a sharp and strong photoluminescence band with a zero-phonon line at 602 nm at room temperature. We demonstrate this new color center works as a single photon source. Both ion implantation and chemical vapor deposition techniques enabled fabrication of GeV centers in diamond. A first-principles calculation revealed the atomic crystal structure and energy levels of the GeV center.
Color centers in diamond are widely recognized as a promising solid state platform for quantum cryptography and quantum information processing. For these applications, single photon sources with a high intensity and reproducible fabrication methods are required. Here, we report a novel color center in diamond, composed of a germanium (Ge) and a vacancy (V) and named the GeV center, which has a sharp and strong photoluminescence band with a zero-phonon line at 602 nm at room temperature. We demonstrate this new color center works as a single photon source. Both ion implantation and chemical vapor deposition techniques enabled fabrication of GeV centers in diamond. A first-principles calculation revealed the atomic crystal structure and energy levels of the GeV center.
Progress in controlling diamond synthesis has made it possible to produce very pure crystals and to incorporate and control atomic impurities and carbon vacancies in the crystal lattice. The appropriate impurity-vacancy combinations can give rise to special defects known as color centers, such as the nitrogen-vacancy (NV) or the silicon-vacancy (SiV), which exhibit exceptional quantum properties with spins that are optically addressable. The use of diamond containing color centers has paved the way for the development of innovative quantum technologies, such as very high-resolution magnetometry and quantum information processing. Nevertheless, the development of quantum sensors at the nanometric scale remains one of the most interesting challenges. In this context, the development of a reliable nanoparticle synthesis technique that allows the desired defects to be incorporated and their quantum optical properties to be modulated is crucial. In this seminar, an efficient and recent method to produce diamond nanoparticles containing NV, SiV and germanium-vacancy (GeV) centers is proposed through direct plasma assisted chemical vapour deposition (CVD) growth. This technique allows good control of both nanoparticle growth processes and color centers formation. The optimization of the CVD nanodiamond growth process is presented, showing the impact of different plasma parameters and gas phasecomposition on nanoparticle crystallinity, size and shape. Morphological characterizations reveal the production of small (around 100 nm) and well faceted nanodiamond particles. In addition, the SiV and GeV color centers incorporation can be tuned within this material by varying the gas phase composition which emphasizes the high flexibility of the CVD growth technique. Finally, the quantum properties of the incorporated color centers have been successfully investigated under extreme pressure conditions (up to ~ 180 GPa) showing a monotonic blue shift of their optical zero-phonon line. Since their luminescence remains stable, SiV and GeV centers emerge as high-pressure nanosensors.
Motivated by the success of group IV color centers in nanodiamonds (NDs) for hybrid technology requiring a single photon source, the authors study single germanium-vacancy (GeV−) centers in NDs at room temperature with size ranging from 10 to 50 nm and with remarkable spectral properties. The authors characterize their zero-phonon line, study their internal population dynamics, and compare their emission properties in the framework of a three level model with intensity dependent de-shelving. Furthermore, the authors characterize their lifetime, polarization, and brightness. The authors find a maximum photon emission count rate of 1.6 MHz at saturation. The authors also report a polarization visibility of 92% from the fluorescence light, which potentially makes GeV− centers good candidates for quantum key distribution requiring polarized single photons. The authors show that GeV− centers in NDs presented in this work have a comparable spectral stability compared to their bulk counterpart, which is needed for future applications using nanodiamonds.
Development of quantum information processing requires realization of solid state structures able to manipulate light or matter quantum bits. One of the promising candidates for been active elements of such solid-state platform are color centers in diamond. The most famous nitrogen-vacancy color center has number of attractive features and found a lot of applications in sensing and imaging. Still, it has number of considerable disadvantages, among which it sensitivity to the surface damages and thus its incompatibility with nanostructures. On another side implementation of nano- and micro- structures enabled considerable progress in manipulation of light quanta. In particular photonic crystal cavities allowed to realize strong coupling of cavity and spin system. This led to demonstration of efficient light collection and realization of simple quantum gates with artificial or real atoms. Novel color centers such as silicon-vacancy or germanium-vacancy color center due to inversion symmetry of the electron structure are not sensitive to the surface damages and presence of surface nearby. Thus, those are perfect candidates for been combined with photonic crystal structures. Novel technologies enabled growing of the nanodiamonds of ultra-small size having well-defined color center inside. Along with techniques to position those precisely on the nano- and micro structures these achievements opened opportunity to integrate high-fines photonic-crystal cavities with the germanium-vacancy containing nanocrystals thus forming fully solid-state platform for quantum manipulation of light. In my talk I will describe our progress towards realization of this ambitious goal.
Negatively charged germanium vacancy centers (GeV) in diamond are a promising platform for quantum computing and quantum communication. However, these applications require the precise incorporation of GeV centers with good optical properties inside of nanophotonic structures. In this work, we demonstrate the highly efficient local creation of GeV centers in diamond via focused-ion-beam implantation, followed by high-temperature annealing. We report the successful creation of GeV centers over the depth range of 5.5 - 30 nm. Implantation at low fluence enables the creation of single GeV centers. The formation yield strongly depends on implantation energy and fluence, reaching up to 33% at energies of 35 and 70 keV. This method, therefore, enables the efficient creation of GeV centers within a small, well-defined local sample volume and offers a potential means of incorporating them into photonic structures.