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Laser Resonators, Microresonators, and Beam Control

Photonic crystal cavities with germanium vacancy color centers in diamond (Conference Presentation)

Alexey Akimov, Abdulrahman M. Alajlan

Published Mar 13, 2019• 0 citations
Publisher

Abstract

Development of quantum information processing requires realization of solid state structures able to manipulate light or matter quantum bits. One of the promising candidates for been active elements of such solid-state platform are color centers in diamond. The most famous nitrogen-vacancy color center has number of attractive features and found a lot of applications in sensing and imaging. Still, it has number of considerable disadvantages, among which it sensitivity to the surface damages and thus its incompatibility with nanostructures. On another side implementation of nano- and micro- structures enabled considerable progress in manipulation of light quanta. In particular photonic crystal cavities allowed to realize strong coupling of cavity and spin system. This led to demonstration of efficient light collection and realization of simple quantum gates with artificial or real atoms. Novel color centers such as silicon-vacancy or germanium-vacancy color center due to inversion symmetry of the electron structure are not sensitive to the surface damages and presence of surface nearby. Thus, those are perfect candidates for been combined with photonic crystal structures. Novel technologies enabled growing of the nanodiamonds of ultra-small size having well-defined color center inside. Along with techniques to position those precisely on the nano- and micro structures these achievements opened opportunity to integrate high-fines photonic-crystal cavities with the germanium-vacancy containing nanocrystals thus forming fully solid-state platform for quantum manipulation of light. In my talk I will describe our progress towards realization of this ambitious goal.

DOI
10.1117/12.2507722

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Development of quantum information processing requires realization of solid state structures able to manipulate light or matter quantum bits. One of the promising candidates for been active elements of such solid-state platform are color centers in diamond. The most famous nitrogen-vacancy color center has number of attractive features and found a lot of applications in sensing and imaging. Still, it has number of considerable disadvantages, among which it sensitivity to the surface damages and thus its incompatibility with nanostructures. On another side implementation of nano- and micro- structures enabled considerable progress in manipulation of light quanta. In particular photonic crystal cavities allowed to realize strong coupling of cavity and spin system. This led to demonstration of efficient light collection and realization of simple quantum gates with artificial or real atoms. Novel color centers such as silicon-vacancy or germanium-vacancy color center due to inversion symmetry of the electron structure are not sensitive to the surface damages and presence of surface nearby. Thus, those are perfect candidates for been combined with photonic crystal structures. Novel technologies enabled growing of the nanodiamonds of ultra-small size having well-defined color center inside. Along with techniques to position those precisely on the nano- and micro structures these achievements opened opportunity to integrate high-fines photonic-crystal cavities with the germanium-vacancy containing nanocrystals thus forming fully solid-state platform for quantum manipulation of light. In my talk I will describe our progress towards realization of this ambitious goal.
In recent years there has been substantial progress in solid-state quantum information demonstrations based on diamond. This ranges from room-temperature multi-qubit quantum registers to spin-photon entanglement to loophole-free Bell tests. Most of these demonstrations are done with the nitrogen-vacancy (NV) center. Recently however the silicon-vacancy (SiV) center has shown a much better coupling to photons, owing to the suppression of spectral diffusion. Still more recently the germanium-vacancy (GeV) has shown much higher quantum efficiency the SiV. However there are tradeoffs. In this talk I will review the various options for quantum information devices in diamond. I will also discuss new options for the future, including designer color centers made possible by novel diamond growth techniques.
Luminescent lattice defects (so called “color centers”) in diamond provide a robust, solid-state architecture for exploring quantum optics, with many facilitating direct access to highly coherent electron and nuclear spins. The past two decades have seen tremendous advances in our ability to prepare and control the quantum states of these atom-like systems. For instance, demonstrations that leverage the diamond nitrogen vacancy (NV–) center as a spin-photon interface have included the generation of indistinguishable photons, a quantum bit memory exceeding 1 second, entanglement of two distance solid-state qubits, and deterministic long distance quantum teleportation. While diamond color centers are an attractive platform for scalable quantum information processing, the diamond solid-state matrix, by its very nature, inhibits efficient photon collection into either free-space or fiber-optical systems. Due to its large refractive index, emitted photons are inevitably trapped within the diamond crystal by total internal reflection, limiting count rates and overall scalability of information processing via quantum optical protocols. To this end, there has been significant progress towards integrating individual diamond color centers within well-defined radiation channels: namely, those provided by monolithic diamond nanophotonic networks. Currently, on-chip low loss (~ few db/cm) diamond waveguide networks are available, as well as key passive photonic elements like micron scale ring and disk resonators and photonic crystal cavities, with high optical quality (Q) factors. Specifically, we recently demonstrated a scalable ‘angled-etching’ nanofabrication method for realizing nanophotonic networks starting from bulk single-crystal diamond substrates (MJ Burek et al., Nano Letters 2012, MJ Burek et al., Nat Comm. 2014). Angled-etching employs anisotropic oxygen-based plasma etching at an oblique angle to the substrate surface, resulting in suspended optical structures with triangular cross-sections. Using this approach, we demonstrated high Q-factor (> 10^5) optical nanocavities fabricated in bulk single-crystal diamond, operating over a wide wavelength range (visible to telecom). Beyond isolated photonic devices, we have further developed free-standing angled-etched waveguides which efficiently route photons between diamond optical nanocavities, while maintaining physical support through attachment to the bulk substrate. Although on-chip diamond nanophotonics realized by angled-etching continue to mature, efficient off-chip optical coupling schemes which provide near seamless transition of photons on-chip into commercial optical fibers remain an outstanding challenge. This is especially pertinent in applications involving single photons, such as quantum optics with diamond color centers. Herein, we demonstrate a high efficiency fiber-optical interface with aforementioned on-chip diamond nanophotonic networks, achieving > 90% power coupling at both telecom and visible wavelengths. The coupling scheme utilizes a single mode optical fiber, with one end fabricated into a conical taper, to adiabatically transition guided light between on-chip tapered diamond waveguides and off-chip optical fiber networks. Additionally, we develop techniques to robustly pigtail single-mode fibers with diamond waveguide couplers, yielding a packaged technology that may potentially enable deployment in harsh environments, including vacuum, sub-Kelvin cryogenics, or even liquid/biological environments. With these newly developed optical integration schemes, single-crystal diamond is now a viable integrated nanophotonics platform, servicing a range of applications, from non-linear optics and chemical sensing, to quantum science and cavity optomechanics.
Progress in controlling diamond synthesis has made it possible to produce very pure crystals and to incorporate and control atomic impurities and carbon vacancies in the crystal lattice. The appropriate impurity-vacancy combinations can give rise to special defects known as color centers, such as the nitrogen-vacancy (NV) or the silicon-vacancy (SiV), which exhibit exceptional quantum properties with spins that are optically addressable. The use of diamond containing color centers has paved the way for the development of innovative quantum technologies, such as very high-resolution magnetometry and quantum information processing. Nevertheless, the development of quantum sensors at the nanometric scale remains one of the most interesting challenges. In this context, the development of a reliable nanoparticle synthesis technique that allows the desired defects to be incorporated and their quantum optical properties to be modulated is crucial. In this seminar, an efficient and recent method to produce diamond nanoparticles containing NV, SiV and germanium-vacancy (GeV) centers is proposed through direct plasma assisted chemical vapour deposition (CVD) growth. This technique allows good control of both nanoparticle growth processes and color centers formation. The optimization of the CVD nanodiamond growth process is presented, showing the impact of different plasma parameters and gas phasecomposition on nanoparticle crystallinity, size and shape. Morphological characterizations reveal the production of small (around 100 nm) and well faceted nanodiamond particles. In addition, the SiV and GeV color centers incorporation can be tuned within this material by varying the gas phase composition which emphasizes the high flexibility of the CVD growth technique. Finally, the quantum properties of the incorporated color centers have been successfully investigated under extreme pressure conditions (up to ~ 180 GPa) showing a monotonic blue shift of their optical zero-phonon line. Since their luminescence remains stable, SiV and GeV centers emerge as high-pressure nanosensors.
Efficient interfaces between optical photons and quantum bits are fundamental building blocks for quantum networks and large-scale quantum computers. We demonstrate an integrated platform for scalable quantum optics based on color centers coupled to diamond nanodevices. First, we incorporate nitrogen-vacancy (NV) centers in diamond into hybrid nanophotonic crystal cavities. Despite our progress towards coupling the NV to cavity photons, we find that the NV-cavity interface is limited by the imperfections of the color center's properties and its local environment. We approach this challenge first by characterizing and modifying the diamond surface to reduce the environmental noise affecting the NV optical transition. Subsequently, we develop a new approach that makes use of a quantum emitter with intrinsic protection from this noise: the silicon-vacancy (SiV) center in diamond. We demonstrate that SiV centers introduced through ion implantation feature highly coherent optical transitions, even inside nanostructures. By placing SiV centers inside all-diamond photonic crystal cavities, we achieve strong SiV-photon coupling with a cooperativity of greater than 20. Using this platform, we realize a quantum-optical switch controlled by the spin degree of freedom of a single SiV. By measuring intensity correlations of indistinguishable Raman photons emitted into a single waveguide, we observe a quantum interference effect resulting from the superradiant emission of two probabilistically entangled SiV centers. Finally, we demonstrate controllable photon-mediated interactions between the spin degrees of freedom of two cavity-coupled SiV centers. When the optical transitions of the two SiV centers are tuned into resonance, the coupling of each SiV to the common cavity mode results in a coherent interaction between the two SiVs, leading to the observation of super- and sub-radiant two-SiV states.
Defect centers in diamond are regarded as a promising candidate for future solid state quantum technology. In particular the nitrogen vacancy (NV) center attracts researchers attention, as it promises to emit indistinguishable single photons and provides a triplet ground state with ultra long spin coherence times. In particular NV centers in nano diamonds are attractive, since they can be integrated into quantum photonic hybrid devices with nano manipulation techniques. We report on first demonstrations of the integration of NV-centers into photonic hybrid devices, and point out future applications. Beside the striking demonstrations of the integrability, nanodiamonds have several drawbacks. In particular the spectral diffusion of the zero-phonon line is addressed.
Recently, developments in novel and high-purity materials allow for the presence of a single, solitary crystalline defect to define the electronic, magnetic, and optical functionality of a device. The discrete nature of the active dopant, whose properties are defined by a quantum mechanical description of its structure, enables radically new quantum investigations and applications in these arenas. Finally,there has been significant development in large-scale device engineering due to mature semiconductor manufacturing techniques. The diverse set of photonic device architectures offering light confinement, guiding, and extraction is a prime example. These three paradigms – solitary dopant photonics and optoelectronics (solotronics), quantum science\tand technology, and device engineering – merge in the development of novel quantum photonic devices for the next generation of information processing systems. We present in this thesis a series of investigations of optical nanostructures for single optically active spins in single crystal diamond. Chapter 1 introduces the Nitrogen-Vacancy (NV) color center, summarizes its applications, and motivates the need for their integration into photonic structures. Chapter 2 describes two prototype nanobeam photonic crystal cavities for generating strong light-matter interactions with NV centers. The first device consists of a silicon nitride photonic crystal nanobeam cavity with high quality factor \\(Q \\sim 10^5\\) and small mode volume \\(V \\sim 0.5*(\\lambda/n)^3\\). The second device consists of a monolithic diamond nanobeam cavity fabricated with the focused ion beam (FIB) directly in a single crystal diamond sample. Chapter 3 presents a high-efficiency source of single photons consisting of a single NV center in a photonic diamond nanowire. Early FIB prototypes are described, as is the first successful realization of the device achieved via reactive ion etching nanowires in a single crystal diamond containing NV centers, and finally a variation of this approach based on incorporation of NV centers in pure diamond via ion implantation. In chapter 4 we consider the optimal design of photonic devices offering both collection efficiency and cavity-enhancements and extend the model of the NV center to include photonic effects. In chapter 5 we briefly introduce a novel optically active spin discovered in a diamond nanowire. Finally, in chapter 6 we conclude with several proposals to extend this research program.