Additional data for the dissertation: Resolving locations of defects in superconducting transmon qubits

Alexander Bilmes, G. Weiß, R. Barends +5 more

Alexander Bilmes

Despite tremendous progress of quantum computation with superconducting qubits, up-scaling for practical applications is hindered by decoherence and fluctuations induced by material defects. In this work, a qubit interface has been developed to study the microscopic nature of individual defects in a probe material. Further, a portable method has been developed to find locations of individual defects in ready-made qubit samples, which offers to test and improve micro-fabrication of qubits.

David Schuster

Kassandra Weber, Jaeyel Lee, Akshay A. Murthy +1 more

In superconducting transmon qubits, macroscopic characterization is the primary method for probing performance metrics, such as relaxation T1 and dephasing T2 times, resonance frequency, and quality factor. While these measurements can aid our understanding of the dielectric loss of a transmon, they do not allow us to characterize the structural and chemical inhomogeneity of the interfaces which directly impacts this energy loss. These fundamental materials problems must be studied using transmission electron microscopy (TEM) to provide insight into these defects across different qubit interfaces at an atomic scale. In this contribution, we will examine qubits, such as those shown in Figure 1, fabricated at Fermi National Accelerator Laboratory (SQMS Center) [1]. The qubit devices consist of superconducting metal base layers, typically sputter deposited Nb or Ta, and Al/AlOx/Al junctions, where the AlOx barrier is roughly 3nm in thickness and prepared through in-situ oxidation [2]. Characterizing this system prior to its integration within a superconducting radio frequency cavity establishes a baseline for the system, allowing us to isolate fabrication-induced defects before they manifest in performance degradation during quantum measurements. With the samples and fabrication process well known on a macroscopic scale, we study the atomic structure and chemistry of different heterointerfaces within the Josephson junction (JJ) of the transmon qubit and between the sapphire substrate and Nb resonator pads to identify potential defects contributing to the decoherence for qubits constructed with particular geometries. To resolve these defects, atomic-resolution imaging, energy-dispersive X-ray spectroscopy (EDS), and electron-energy loss spectroscopy (EELS) are performed using the JEOL-ARM200CF, an aberration-corrected scanning transmission electron microscope (STEM). Figure 2 provides a clear image of the stacked layers formed as the JJ, but with the addition of a platinum and carbon protective coating added during the focus ion beam (FIB) milling process to preserve pristine Al/AlOx/Al interfaces. 4D-STEM approaches, such as ptychography, orientation mapping and nanoscale diffraction will be employed to further study the layered interfaces and defects in real space and reciprocal space. These techniques can also provide insight into any damage that incurs during lamella preparation using the FIB [3]. Magnetic field-free atomic resolution imaging, differential phase contrast mapping, and monochromated EELS can be achieved using the new MARS-MONO STEM (JEM-Z200MF) without inducing current fluctuations or magnetic field related distortions [4]. By integrating this work across the functional interfaces of the transmon qubits and their different geometries, we will identify possible structural and chemical defects which limit device performance using our multi-modal approach [5]. SQMS fabricated transmon qubits fabricated on HEMEX sapphire substrate imaged via a) ZEISS optical microscope, b) SEM and c) EDS. TEM image of Josephson Junction layered interface at on JEOL-ARM200CF on the ClearView camera with a 200kV accelerating voltage.

Shotaro Shirai, Shinichi Inoue, Shuhei Tamate +3 more

Entangling gates between neighboring physical qubits are essential for quantum error correction. Implementing them in an all-microwave manner simplifies signal routing and control apparatus of superconducting quantum processors. We propose and experimentally demonstrate an all-microwave controlled-Z (CZ) gate that achieves high fidelity while suppressing residual ZZ interactions. Our approach utilizes a fixed-frequency transmon coupler and multi-path coupling, thereby sufficiently reducing the net transverse interaction between data transmons to suppress residual ZZ interactions. The controlled phase arises from the dispersive frequency shift of the $|gf\rangle$$\unicode{x2013}$$|eg\rangle$ transition between the coupler and one of the data transmons conditioned on the state of the other data transmon. Driving the transitions at the midpoint of two dispersively shifted resonance frequencies induces state-dependent geometric phases to achieve the CZ gate. Crucially, with this scheme, we can maintain a small net transverse interaction between two data transmons while increasing the coupling between the data and coupler transmons to accelerate the CZ-gate speed. Additionally, we measure the coupler state after the gate to detect a subset of decoherence-induced failures that occur during the gate operation. These events constitute erasure errors with known locations, enabling erasure-aware quantum error-correcting codes to improve future logical qubit performance.

Stefano Olivares