Despite tremendous progress of quantum computation with superconducting qubits, up-scaling for practical applications is hindered by decoherence and fluctuations induced by material defects. In this work, a qubit interface has been developed to study the microscopic nature of individual defects in a probe material. Further, a portable method has been developed to find locations of individual defects in ready-made qubit samples, which offers to test and improve micro-fabrication of qubits.
Despite tremendous progress of quantum computation with superconducting qubits, up-scaling for practical applications is hindered by decoherence and fluctuations induced by material defects. In this work, a qubit interface has been developed to study the microscopic nature of individual defects in a probe material. Further, a portable method has been developed to find locations of individual defects in ready-made qubit samples, which offers to test and improve micro-fabrication of qubits.
Solid-state quantum coherent devices are quickly progressing. Superconducting circuits, for instance, have already been used to demonstrate prototype quantum processors comprising a few tens of quantum bits. This development also revealed that a major part of decoherence and energy loss in such devices originates from a bath of parasitic material defects. However, neither the microscopic structure of defects nor the mechanisms by which they emerge during sample fabrication are understood. Here, we present a technique to obtain information on locations of defects relative to the thin film edge of the qubit circuit. Resonance frequencies of defects are tuned by exposing the qubit sample to electric fields generated by electrodes surrounding the chip. By determining the defect’s coupling strength to each electrode and comparing it to a simulation of the field distribution, we obtain the probability at which location and at which interface the defect resides. This method is applicable to already existing samples of various qubit types, without further on-chip design changes. It provides a valuable tool for improving the material quality and nano-fabrication procedures towards more coherent quantum circuits.
Abstract Superconducting integrated circuits have demonstrated a tremendous potential to realize integrated quantum computing processors. However, the downside of the solid-state approach is that superconducting qubits suffer strongly from energy dissipation and environmental fluctuations caused by atomic-scale defects in device materials. Further progress towards upscaled quantum processors will require improvements in device fabrication techniques, which need to be guided by novel analysis methods to understand and prevent mechanisms of defect formation. Here, we present a technique to analyse individual defects in superconducting qubits by tuning them with applied electric fields. This provides a spectroscopy method to extract the defects’ energy distribution, electric dipole moments, and coherence times. Moreover, it enables one to distinguish defects residing in Josephson junction tunnel barriers from those at circuit interfaces. We find that defects at circuit interfaces are responsible for about 60% of the dielectric loss in the investigated transmon qubit sample. About 40% of all detected defects are contained in the tunnel barriers of the large-area parasitic Josephson junctions that occur collaterally in shadow evaporation, and only ≈ ≈ 3% are identified as strongly coupled defects, which presumably reside in the small-area qubit tunnel junctions. The demonstrated technique provides a valuable tool to assess the decoherence sources related to circuit interfaces and to tunnel junctions that is readily applicable to standard qubit samples.
Solid-state quantum coherent devices are quickly progressing. Superconducting circuits, for instance, have already been used to demonstrate prototype quantum processors comprising a few tens of quantum bits. This development also revealed that a major part of decoherence and energy loss in such devices originates from a bath of parasitic material defects. However, neither the microscopic structure of defects nor the mechanisms by which they emerge during sample fabrication are understood. Here, we present a technique to obtain information on locations of defects relative to the thin film edge of the qubit circuit. Resonance frequencies of defects are tuned by exposing the qubit sample to electric fields generated by electrodes surrounding the chip. By determining the defect's coupling strength to each electrode and comparing it to a simulation of the field distribution, we obtain the probability at which location and at which interface the defect resides. This method is applicable to already existing samples of various qubit types, without further on-chip design changes. It provides a valuable tool for improving the material quality and nano-fabrication procedures towards more coherent quantum circuits.
In superconducting transmon qubits, macroscopic characterization is the primary method for probing performance metrics, such as relaxation T1 and dephasing T2 times, resonance frequency, and quality factor. While these measurements can aid our understanding of the dielectric loss of a transmon, they do not allow us to characterize the structural and chemical inhomogeneity of the interfaces which directly impacts this energy loss. These fundamental materials problems must be studied using transmission electron microscopy (TEM) to provide insight into these defects across different qubit interfaces at an atomic scale. In this contribution, we will examine qubits, such as those shown in Figure 1, fabricated at Fermi National Accelerator Laboratory (SQMS Center) [1]. The qubit devices consist of superconducting metal base layers, typically sputter deposited Nb or Ta, and Al/AlOx/Al junctions, where the AlOx barrier is roughly 3nm in thickness and prepared through in-situ oxidation [2]. Characterizing this system prior to its integration within a superconducting radio frequency cavity establishes a baseline for the system, allowing us to isolate fabrication-induced defects before they manifest in performance degradation during quantum measurements. With the samples and fabrication process well known on a macroscopic scale, we study the atomic structure and chemistry of different heterointerfaces within the Josephson junction (JJ) of the transmon qubit and between the sapphire substrate and Nb resonator pads to identify potential defects contributing to the decoherence for qubits constructed with particular geometries. To resolve these defects, atomic-resolution imaging, energy-dispersive X-ray spectroscopy (EDS), and electron-energy loss spectroscopy (EELS) are performed using the JEOL-ARM200CF, an aberration-corrected scanning transmission electron microscope (STEM). Figure 2 provides a clear image of the stacked layers formed as the JJ, but with the addition of a platinum and carbon protective coating added during the focus ion beam (FIB) milling process to preserve pristine Al/AlOx/Al interfaces. 4D-STEM approaches, such as ptychography, orientation mapping and nanoscale diffraction will be employed to further study the layered interfaces and defects in real space and reciprocal space. These techniques can also provide insight into any damage that incurs during lamella preparation using the FIB [3]. Magnetic field-free atomic resolution imaging, differential phase contrast mapping, and monochromated EELS can be achieved using the new MARS-MONO STEM (JEM-Z200MF) without inducing current fluctuations or magnetic field related distortions [4]. By integrating this work across the functional interfaces of the transmon qubits and their different geometries, we will identify possible structural and chemical defects which limit device performance using our multi-modal approach [5]. SQMS fabricated transmon qubits fabricated on HEMEX sapphire substrate imaged via a) ZEISS optical microscope, b) SEM and c) EDS. TEM image of Josephson Junction layered interface at on JEOL-ARM200CF on the ClearView camera with a 200kV accelerating voltage.
Despite mounting evidence that materials imperfections are a major obstacle to practical applications of superconducting qubits, connections between microscopic material properties and qubit coherence are poorly understood.Here, we combine measurements of transmon qubit relaxation times (T 1 ) with spectroscopy and microscopy of the polycrystalline niobium films used in qubit fabrication.By comparing films deposited using three different techniques, we reveal correlations between T 1 and intrinsic film properties such as grain size, enhanced oxygen diffusion along grain boundaries, and the concentration of suboxides near the surface.Qubit and resonator measurements show signatures of two-level system defects, which we propose to be hosted in the grain boundaries and surface oxides.We also show that the residual resistance ratio of the polycrystalline niobium films can be used as a figure of merit for qubit lifetime.This comprehensive approach to understanding qubit decoherence charts a pathway for materials-driven improvements of superconducting qubit performance.
Decoherence and parameter fluctuations are two of the mayor obstacles for solid-state quantum computing. In this work, decoherence in superconducting qubits of the transmon type is investigated. For this purpose, a time-multiplexed measurement protocol was developed and applied in long-term measurements. The resulting simultaneous measurement of the qubit's relaxation and dephasing rate, as well as its resonance frequency enables analysis of correlations between these parameters. A spectral noise analysis complements these measurements. Together, the results agree well with the interacting defect model of two-level-systems and yield information about the microscopic origin of the intrinsic decoherence mechanisms in Josephson qubits. Our measurements show inherent correlations between dephasing and fluctuations in qubit frequency on the timescale of seconds to days, which is attributed to the influence of individual defects, located close to conductor edges. Cross-correlation and spectral noise analysis confirm this interpretation and ascribe the source of fluctuation to interactions between thermal fluctuators and surface defects. Single defects reducing the coherence of qubits by up to one order of magnitude are a major challenge for future quantum computers. Non-tunable qubits are intrinsically insensitive to some decoherence channels and thus ideal for this fundamental analysis. However, to widen the focus and contrast the results of different material systems, we pursue the fabrication of voltage controlled gatemon qubits. In the course of this work, the theoretical foundation and technical implementation of transmon qubits based on regular Josephson weak links, and semiconducting nanowires is given. The experimental design and measurement setup are explained in detail. Our findings make continuous re-calibration a necessity in today's solid-state qubits, although new materials or processing techniques might mitigate the problem. However, the results of this work imply that fundamental improvements of qubit parameter stability are necessary in order to realize scalable and coherent qubit circuits.