Solid-state quantum coherent devices are quickly progressing. Superconducting circuits, for instance, have already been used to demonstrate prototype quantum processors comprising a few tens of quantum bits. This development also revealed that a major part of decoherence and energy loss in such devices originates from a bath of parasitic material defects. However, neither the microscopic structure of defects nor the mechanisms by which they emerge during sample fabrication are understood. Here, we present a technique to obtain information on locations of defects relative to the thin film edge of the qubit circuit. Resonance frequencies of defects are tuned by exposing the qubit sample to electric fields generated by electrodes surrounding the chip. By determining the defect's coupling strength to each electrode and comparing it to a simulation of the field distribution, we obtain the probability at which location and at which interface the defect resides. This method is applicable to already existing samples of various qubit types, without further on-chip design changes. It provides a valuable tool for improving the material quality and nano-fabrication procedures towards more coherent quantum circuits.Solid-state quantum coherent devices are quickly progressing. Superconducting circuits, for instance, have already been used to demonstrate prototype quantum processors comprising a few tens of quantum bits. This development also revealed that a major part of decoherence and energy loss in such devices originates from a bath of parasitic material defects. However, neither the microscopic structure of defects nor the mechanisms by which they emerge during sample fabrication are understood. Here, we present a technique to obtain information on locations of defects relative to the thin film edge of the qubit circuit. Resonance frequencies of defects are tuned by exposing the qubit sample to electric fields generated by electrodes surrounding the chip. By determining the defect's coupling strength to each electrode and comparing it to a simulation of the field distribution, we obtain the probability at which location and at which interface the defect resides. This method is applicable to already existing samples of various qubit types, without further on-chip design changes. It provides a valuable tool for improving the material quality and nano-fabrication procedures towards more coherent quantum circuits.

arXiv:1911.08246Scientific ReportsFeb 20, 202055 citations

Design improvements for superconducting qubits

Matthias Steffen

Bulletin of the American Physical SocietyMar 18, 20100 citations

Adaptive Spectroscopy of Fast Two-Level-System Dynamics in Superconducting Qubits

Fabrizio Berritta, David Pahl, Lukas Pahl +15 more

Parasitic two-level-system (TLS) defects are a major source of energy relaxation and temporal instability in superconducting quantum processors. Our sub-second adaptive spectroscopy reveals telegraphic switching of TLSs with a characteristic timescale of a few seconds and spectral diffusion with diffusivity $D \approx 0.9~\mathrm{MHz}^2/\mathrm{s}$ . These timescales are about $3 \times 10^2$ times faster than what is observed in conventional nonadaptive spectroscopy, which typically requires hours of measurement time. We resolve such fast dynamics on a field-programmable gate array (FPGA)-based controller that enables measurement of frequency- and time-resolved relaxations with sub-second temporal resolution in flux-tunable superconducting qubits. We observe similar defect dynamics across multiple qubits in independently fabricated devices measured in different laboratories. We correlate TLS-induced fluctuations with gate-level errors using randomized benchmarking. Our results reveal a previously inaccessible regime of frequency-resolved TLS dynamics and redefine the timescales relevant to TLS-aware characterization and calibration of superconducting quantum processors.Parasitic two-level-system (TLS) defects are a major source of energy relaxation and temporal instability in superconducting quantum processors. Our sub-second adaptive spectroscopy reveals telegraphic switching of TLSs with a characteristic timescale of a few seconds and spectral diffusion with diffusivity $D \approx 0.9~\mathrm{MHz}^2/\mathrm{s}$. These timescales are about $3 \times 10^2$ times faster than what is observed in conventional nonadaptive spectroscopy, which typically requires hours of measurement time. We resolve such fast dynamics on a field-programmable gate array (FPGA)-based controller that enables measurement of frequency- and time-resolved relaxations with sub-second temporal resolution in flux-tunable superconducting qubits. We observe similar defect dynamics across multiple qubits in independently fabricated devices measured in different laboratories. We correlate TLS-induced fluctuations with gate-level errors using randomized benchmarking. Our results reveal a previously inaccessible regime of frequency-resolved TLS dynamics and redefine the timescales relevant to TLS-aware characterization and calibration of superconducting quantum processors.

quant-pharXiv:2608.02086Aug 4, 20260 citations

Resolving the positions of defects in superconducting quantum bits

Alexander Bilmes, A. Megrant, Paul V. Klimov +4 more

Solid-state quantum coherent devices are quickly progressing. Superconducting circuits, for instance, have already been used to demonstrate prototype quantum processors comprising a few tens of quantum bits. This development also revealed that a major part of decoherence and energy loss in such devices originates from a bath of parasitic material defects. However, neither the microscopic structure of defects nor the mechanisms by which they emerge during sample fabrication are understood. Here, we present a technique to obtain information on locations of defects relative to the thin film edge of the qubit circuit. Resonance frequencies of defects are tuned by exposing the qubit sample to electric fields generated by electrodes surrounding the chip. By determining the defect’s coupling strength to each electrode and comparing it to a simulation of the field distribution, we obtain the probability at which location and at which interface the defect resides. This method is applicable to already existing samples of various qubit types, without further on-chip design changes. It provides a valuable tool for improving the material quality and nano-fabrication procedures towards more coherent quantum circuits.Solid-state quantum coherent devices are quickly progressing. Superconducting circuits, for instance, have already been used to demonstrate prototype quantum processors comprising a few tens of quantum bits. This development also revealed that a major part of decoherence and energy loss in such devices originates from a bath of parasitic material defects. However, neither the microscopic structure of defects nor the mechanisms by which they emerge during sample fabrication are understood. Here, we present a technique to obtain information on locations of defects relative to the thin film edge of the qubit circuit. Resonance frequencies of defects are tuned by exposing the qubit sample to electric fields generated by electrodes surrounding the chip. By determining the defect’s coupling strength to each electrode and comparing it to a simulation of the field distribution, we obtain the probability at which location and at which interface the defect resides. This method is applicable to already existing samples of various qubit types, without further on-chip design changes. It provides a valuable tool for improving the material quality and nano-fabrication procedures towards more coherent quantum circuits.

Jan 1, 202043 citations

D \approx 0.9~\mathrm{MHz}^2/\mathrm{s}

. These timescales are about

3 \times 10^2

times faster than what is observed in conventional nonadaptive spectroscopy, which typically requires hours of measurement time. We resolve such fast dynamics on a field-programmable gate array (FPGA)-based controller that enables measurement of frequency- and time-resolved relaxations with sub-second temporal resolution in flux-tunable superconducting qubits. We observe similar defect dynamics across multiple qubits in independently fabricated devices measured in different laboratories. We correlate TLS-induced fluctuations with gate-level errors using randomized benchmarking. Our results reveal a previously inaccessible regime of frequency-resolved TLS dynamics and redefine the timescales relevant to TLS-aware characterization and calibration of superconducting quantum processors.