Decoherence and parameter fluctuations are two of the mayor obstacles for solid-state quantum computing. In this work, decoherence in superconducting qubits of the transmon type is investigated. For this purpose, a time-multiplexed measurement protocol was developed and applied in long-term measurements. The resulting simultaneous measurement of the qubit's relaxation and dephasing rate, as well as its resonance frequency enables analysis of correlations between these parameters. A spectral noise analysis complements these measurements. Together, the results agree well with the interacting defect model of two-level-systems and yield information about the microscopic origin of the intrinsic decoherence mechanisms in Josephson qubits. Our measurements show inherent correlations between dephasing and fluctuations in qubit frequency on the timescale of seconds to days, which is attributed to the influence of individual defects, located close to conductor edges. Cross-correlation and spectral noise analysis confirm this interpretation and ascribe the source of fluctuation to interactions between thermal fluctuators and surface defects. Single defects reducing the coherence of qubits by up to one order of magnitude are a major challenge for future quantum computers. Non-tunable qubits are intrinsically insensitive to some decoherence channels and thus ideal for this fundamental analysis. However, to widen the focus and contrast the results of different material systems, we pursue the fabrication of voltage controlled gatemon qubits. In the course of this work, the theoretical foundation and technical implementation of transmon qubits based on regular Josephson weak links, and semiconducting nanowires is given. The experimental design and measurement setup are explained in detail. Our findings make continuous re-calibration a necessity in today's solid-state qubits, although new materials or processing techniques might mitigate the problem. However, the results of this work imply that fundamental improvements of qubit parameter stability are necessary in order to realize scalable and coherent qubit circuits.
Introducing disorder in the superconducting materials has been considered promising to enhance the electromagnetic impedance and realize noise-resilient superconducting qubits. Despite a number of pioneering implementations, the understanding of the correlation between the material disorder and the qubit coherence is still developing. Here, we demonstrate a systematic characterization of fluxonium qubits with the superinductors made by spinodal titanium-aluminum-nitride with varied disorder. From qubit noise spectroscopy, the flux noise and the dielectric loss are extracted as a measure of the coherence properties. Our results reveal that the 1/f α flux noise dominates the qubit decoherence around the flux-frustration point, strongly correlated with the material disorder; while the dielectric loss are largely similar under a wide range of material properties. From the flux-noise amplitudes, the areal density (σ) of the phenomenological spin defects and material disorder are found to be approximately correlated by
σ∝ρxx3 , or effectively
(kFl)−3 . This work has provided new insights on the origin of decoherence channels beyond surface defects and within the superconductors, and could serve as a useful guideline for material design and optimization. Disorder has emerged as a promising tool to manipulate properties of superconducting circuits. Here the authors demonstrate the use of disordered spinodal superconductor for fluxonium qubit fabrication and reveal an interesting correlation between the material disorder and the 1/f-type flux noise.
Superconducting quantum circuits are promising platforms for scalable quantum computing, where qubit coherence is critically determined by microscopic defects in the oxide tunneling barrier of Josephson junctions. Amorphous Al
2O
3 is widely used as a barrier material, but under irradiation, oxygen vacancy (V
O) defects are readily generated, introducing noise sources that accelerate qubit decoherence. We systematically investigate the structural characteristics and electronic impact of V
O defects in amorphous Al
2O
3 using first-principles calculations and \textit{ab initio} molecular dynamics. Our results show that both the coordination environment and concentration of V
Os strongly influence electrical conductivity. In particular, two- and three-coordinated V
Os, unique to the amorphous structure, enhance conductivity more than conventional four-coordinated vacancies. Increasing V
O concentration amplifies conductivity fluctuations, which we link to critical current noise in Josephson junctions. Using a noise model, we estimate that higher V
O densities lead to shorter qubit coherence times. These findings provide insights for radiation-hard design of superconducting quantum devices.