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Physical Review Letters

Imaging and Quantum-Efficiency Measurement of Chromium Emitters in Diamond

Stefania Castelletto, Igor Aharonovich, Brant C. Gibson, Brett C. Johnson, Steven Prawer

Published Nov 16, 2010• 32 citations
Publisher

Abstract

We present direct imaging of the emission pattern of individual chromium-based single photon emitters in diamond and measure their quantum efficiency. By imaging the excited state transition dipole intensity distribution in the back focal plane of high numerical aperture objective, we determined its 3D orientation. Employing ion implantation techniques, the emitters were placed at various distances from the diamond-air interface. By comparing the decay rates from the single chromium emitters at different depths in the diamond crystal, we measured an average quantum efficiency of 28%.

DOI
10.1103/physrevlett.105.217403

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We present direct imaging of the emission pattern of individual chromium-based single photon emitters in diamond and measure their quantum efficiency. By imaging the excited state transition dipole intensity distribution in the back focal plane of high numerical aperture objective, we determined its 3D orientation. Employing ion implantation techniques, the emitters were placed at various distances from the diamond-air interface. By comparing the decay rates from the single chromium emitters at different depths in the diamond crystal, we measured an average quantum efficiency of 28%.
We present direct imaging of the emission pattern of individual chromium-based single photon emitters in diamond and measure their quantum efficiency. By imaging the excited state transition dipole intensity distribution in the back focal plane of high numerical aperture objective, we determined that the emission dipole is oriented nearly orthogonal to the diamond-air interface. Employing ion implantation techniques, the emitters were engineered with various proximities from the diamond-air interface. By comparing the decay rates from the single chromium emitters at different depths in the diamond crystal, an average quantum efficiency of 28% was measured.
Diamond is emerging as an optical supermaterial, due to its wide transparency bandwidth, excellent thermooptic properties and most notably its stable, large dipole moment, room temperature, single photon emitting colour centres. In this paper we present recent progress in the characterization of non radiative and radiative decay in single impurities and the fabrication of hybrid diamond-tellurite optical structures.. First, we present direct imaging of the emission pattern of individual ion implanted chromium-based single photon emitters in diamond and measure their quantum efficiency. By comparing the decay rates from the single chromium emitters at different depths in the diamond crystal, we measured an average quantum efficiency of 28%. Second, a hybrid approach involving a soft glass tellurite host material has been introduced, allowing nitrogen-vacancy (NV-) diamond emitters to be built into an optical fibre. The potential of integrating Cr-related centres in hybrid optical structures is also discussed.
Controlled fabrication and identification of bright single-photon emitters is at the heart of quantum optics. Here we demonstrate controlled engineering of a chromium bright single-photon source in bulk diamond by ion implantation. The Cr center has fully polarized emission with a zero-phonon line centered at 749 nm, full width at half maximum of 4 nm, an extremely short lifetime of $\ensuremath{\sim}1\text{ }\text{ns}$, and a count rate of $0.5\ifmmode\times\else\texttimes\fi{}{10}^{6}\text{ }\text{counts}/\text{s}$. By combining the polarization measurements and the vibronic spectra, a model of the center has been proposed consisting of one interstitial chromium atom with a transition dipole along one of the ⟨100⟩⟨100⟩⟨100⟩ directions.
Color centers in diamond, as single photon emitters, are leading candidates for future quantum devices due to their room temperature operation and photostability. The recently discovered chromium-related centers are particularly attractive because they possess narrow bandwidth emission and a very short lifetime. In this paper, we investigate the fabrication methodologies for engineering these centers in monolithic diamond. We show that the emitters can be successfully fabricated by ion implantation of chromium in conjunction with oxygen or sulfur. Furthermore, our results indicate that the background nitrogen concentration is an important parameter, which governs the probability of success in generating these centers.
Color centers in diamond—especially group IV defects—have been advanced as a viable solid-state platform for quantum photonics and information technologies. We investigate the photodynamics and characteristics of germanium-vacancy (GeV) centers hosted in high-pressure high-temperature diamond nanocrystals. Through back-focal plane imaging, we analyze the far-field radiation pattern of the investigated emitters and derive a crossed-dipole emission, which is strongly aligned along one axis. We use this information in combination with lifetime measurements to extract the decay rate statistics of the GeV emitters and determine their quantum efficiency, which we estimated to be ∼ ( 22 ± 2 ) % . Our results offer further insight into the photodynamic properties of the GeV center in nanodiamonds and confirm its suitability as a desirable system for quantum technologies.