Metallic state in a strongly interacting spinless two-valley electron system in 2D

Myriam P. Sarachik

A. A. Shashkin, S. V. Kravchenko

Abstract Using several independent methods, we find that the metal-insulator transition occurs in the strongly-interacting two-valley two-dimensional electron system in ultra-high mobility SiGe/Si/SiGe quantum wells in zero magnetic field. The transition survives in this system in parallel magnetic fields strong enough to completely polarize the electrons’ spins, thus making the electron system “spinless.” In both cases, the resistivity on the metallic side near the transition increases with decreasing temperature, reaches a maximum at a temperature Tmax, and then decreases. The decrease reaches more than an order of magnitude in zero magnetic field. The value of Tmax in zero magnetic field is found to be close to the renormalized Fermi temperature. However, rather than increasing along with the Fermi temperature, the value Tmax decreases appreciably for spinless electrons in spin-polarizing magnetic fields. The observed behavior of Tmax cannot be described by existing theories. The results indicate the spin-related origin of the effect. At the same time, the low-temperature resistivity drop in both spin-unpolarized and spinless electron systems is described quantitatively by the dynamical mean-field theory.

Geneviève Fleury, Xavier Waintal

Using a combination of ground state quantum Monte Carlo and finite size scaling techniques, we perform a systematic study of the effect of Coulomb interaction on the localization length of a disordered two-dimensional electron gas. We find that correlations delocalize the 2D system. In the absence of valley degeneracy (as in GaAs heterostructures), this delocalization effect corresponds to a finite increase of the localization length. The delocalization is much more dramatic in the presence of valley degeneracy [as in Si metal-oxide-semiconductor field-effect transistors], where the localization length increases drastically. We find that a simple mechanism accounts for the main features of the metallic behavior observed in two-dimensional gases. Our findings support the claim that this behavior is a genuine effect of the presence of interactions, yet that the system is not a "true" metal in the thermodynamic sense.

Cyrus F. Hirjibehedin

Hideki Matsumoto, Ferdinando Mancini

Xavier Waintal, Giuliano Benenti, Jean‐Louis Pichard

(received; accepted) PACS. 71.30+h – Metal-insulator transitions and other electronic transitions. PACS. 72.15Rn – Quantum localization. PACS. 71.27+a – Strongly correlated electron systems. Abstract. – Extending finite size scaling theory to the many body ground state, one finds that Coulomb repulsion can drive a system of spinless fermions in a random potential from the Anderson insulator (Fermi glass of localized states) towards a new extended phase in dimension d = 2. The transition occurs at a Coulomb energy to Fermi energy ratio rs ≈ 4, where a change in the nature of the persistent currents has been previously observed. Relevance to the recently observed 2d metallic phase is suggested. Following the scaling theory of localization [1], all 2d systems of electrons (or holes) are localized when electron-electron interaction is negligible. This absence of metals in two dimensions is nowadays questioned after the observation of a transition towards a metallic behavior in silicon based 2d electron gases [2, 3, 4] when the carrier density is varied. This unexpected phenomenon occurs also for hole gases in GaAs heterostructures [5, 6], SiGe [7]