Abstract Using several independent methods, we find that the metal-insulator transition occurs in the strongly-interacting two-valley two-dimensional electron system in ultra-high mobility SiGe/Si/SiGe quantum wells in zero magnetic field. The transition survives in this system in parallel magnetic fields strong enough to completely polarize the electrons’ spins, thus making the electron system “spinless.” In both cases, the resistivity on the metallic side near the transition increases with decreasing temperature, reaches a maximum at a temperature Tmax, and then decreases. The decrease reaches more than an order of magnitude in zero magnetic field. The value of Tmax in zero magnetic field is found to be close to the renormalized Fermi temperature. However, rather than increasing along with the Fermi temperature, the value Tmax decreases appreciably for spinless electrons in spin-polarizing magnetic fields. The observed behavior of Tmax cannot be described by existing theories. The results indicate the spin-related origin of the effect. At the same time, the low-temperature resistivity drop in both spin-unpolarized and spinless electron systems is described quantitatively by the dynamical mean-field theory.
Abstract Using several independent methods, we find that the metal-insulator transition occurs in the strongly-interacting two-valley two-dimensional electron system in ultra-high mobility SiGe/Si/SiGe quantum wells in zero magnetic field. The transition survives in this system in parallel magnetic fields strong enough to completely polarize the electrons’ spins, thus making the electron system “spinless.” In both cases, the resistivity on the metallic side near the transition increases with decreasing temperature, reaches a maximum at a temperature Tmax, and then decreases. The decrease reaches more than an order of magnitude in zero magnetic field. The value of Tmax in zero magnetic field is found to be close to the renormalized Fermi temperature. However, rather than increasing along with the Fermi temperature, the value Tmax decreases appreciably for spinless electrons in spin-polarizing magnetic fields. The observed behavior of Tmax cannot be described by existing theories. The results indicate the spin-related origin of the effect. At the same time, the low-temperature resistivity drop in both spin-unpolarized and spinless electron systems is described quantitatively by the dynamical mean-field theory.
The increase in the resistivity with decreasing temperature followed by a drop by more than one order of magnitude is observed on the metallic side near the zero-magnetic-field metal-insulator transition in a strongly interacting two-dimensional electron system in ultra-clean SiGe/Si/SiGe quantum wells. We find that the temperature [Formula: see text], at which the resistivity exhibits a maximum, is close to the renormalized Fermi temperature. However, rather than increasing along with the Fermi temperature, the value [Formula: see text] decreases appreciably for spinless electrons in spin-polarizing (parallel) magnetic fields. The observed behaviour of [Formula: see text] cannot be described by existing theories. The results indicate the spin-related origin of the effect.
The fate of the metallic phase in parallel magnetic fields represents one of the major open issues in the studies of dilute, strongly interacting systems in two dimensions (2D). In this experiment, the temperature dependence of conductivity σ(T) of a 2D electron system in silicon has been studied in parallel magnetic fields B. At B = 0, the system displays a new and unexpected kind of metallic behavior with dσ/dT > 0, and a novel type of a metal-insulator transition,1 which occurs at a critical electron density nc(0). At low fields (B ≤ 2 T ), nc increases as nc(B) - nc(0) ∝ Bβ(β ≈ 0.9), and the zero-temperature conductivity scales as σ(ns, B, 0)/σ (ns, 0, 0) = f(Bβ/δn) (where δn = (ns - nc(0))/nc(0), and ns is electron density) as expected for a quantum phase transition. The metallic phase persists in fields up to 18 T, consistent with the saturation of nc at high fields. These results strongly suggest that the 2D metal may exist even for spinless electrons.
The resistivities of the dilute, strongly interacting two-dimensional electron systems in the insulating phase of a silicon MOSFET are the same for unpolarized electrons in the absence of magnetic field and for electrons that are fully spin polarized by the presence of an in-plane magnetic field. In both cases the resistivity obeys Efros-Shklovskii variable range hopping $\ensuremath{\rho}(T)={\ensuremath{\rho}}_{0}\text{exp}[{({T}_{ES}/T)}^{1/2}]$, with TES and $1/{\ensuremath{\rho}}_{0}$ mapping onto each other if one applies a shift of the critical density nc reported earlier. With and without magnetic field, the parameters TES and $1/{\ensuremath{\rho}}_{0}={\ensuremath{\sigma}}_{0}$ exhibit scaling consistent with critical behavior approaching a metal-insulator transition.
This chapter focuses on experimental results obtained in low-disordered strongly interacting two-dimensional (2D) electron systems; in particular in (100)-silicon metal-oxide-semiconductor field-effect transistors (MOSFET). It describes the additional confirmation in favor of zero-temperature zero-field metal-insulator transition is provided by magnetic and thermopower measurements. The chapter argues that the metal-insulator transition in silicon samples with very low level of disorder is driven by interactions. In a low-disordered 2D electron system in silicon MOSFETs, the resistivity at a certain "critical" electron density shows virtually no temperature dependence over a wide range of temperatures. In 2000, it was experimentally found that the ratio between the spin and the cyclotron splittings in silicon MOSFETs strongly increases at low electron densities. The strong enhancement of the spin susceptibility has indicated that at low electron densities, the system behaves well beyond the weakly interacting Fermi liquid.
We report temperature and density dependences of the spin susceptibility of strongly interacting electrons in Si inversion layers. We measured (i) the itinerant electron susceptibility ${\ensuremath{\chi}}^{*}$ from the Shubnikov-de Haas oscillations in crossed magnetic fields and (ii) thermodynamic susceptibility ${\ensuremath{\chi}}_{\mathrm{T}}$ sensitive to all the electrons in the layer. Both ${\ensuremath{\chi}}^{*}$ and ${\ensuremath{\chi}}_{\mathrm{T}}$ are strongly enhanced with lowering the electron density in the metallic phase. However, there is no sign of divergency of either quantity at the density of the metal-insulator transition nc. Moreover, the value of ${\ensuremath{\chi}}_{\mathrm{T}}$, which can be measured across the transition down to very low densities deep in the insulating phase, increases with density at n<nc, as expected. In the absence of magnetic field, we found the temperature dependence of ${\ensuremath{\chi}}^{*}$ to be consistent with Fermi-liquid-based predictions, and to be much weaker than the power law predicted by non-Fermi-liquid models. We attribute a much stronger temperature dependence of ${\ensuremath{\chi}}_{\mathrm{T}}$ to localized spin droplets. In strong enough in-plane magnetic field, we found the temperature dependence of ${\ensuremath{\chi}}^{*}$ to be stronger than that expected for the Fermi liquid interaction corrections.
Alexander Shashkin Institute of Solid State Physics, Chernogolovka, Moscow District 142432, Russia Sergey Kravchenko Physics Department, Northeastern University, Boston, Massachusetts 02115, U.S.A. Two-dimensional (2D) electron systems are realized when the electrons are free to move in a plane but their motion perpendicular to the plane is quantized in a confining potential well. Quantum phase transitions realized experimentally in such systems so far include metal-insulator transitions in perpendicular magnetic fields, metal-insulator transition in zero magnetic field, and a possible transition to a Wigner crystal. The first transition is governed by the externally controlled electron density or magnetic field, while the other two are governed by the electron density. At low electron densities in 2D systems, the strongly-interacting limit is reached because the kinetic energy is overwhelmed by the energy of electron-electron interactions. The interaction strength is characterized by the ratio between the Coulomb energy and the Fermi energy, r∗s = Eee/EF . Assuming that the effective electron mass is equal to the band mass, the interaction parameter r∗s in the single-valley case reduces to the Wigner-Seitz radius, rs = 1/(πns)1/2aB, and therefore increases as the electron density, ns, decreases (here aB is the Bohr radius in the semiconductor). Possible candidates for the ground state of the system include a Wigner crystal characterized by spatial and spin ordering [1], a ferromagnetic Fermi liquid with spontaneous spin ordering [2], a paramagnetic Fermi liquid [3], etc. In the strongly-interacting limit (rs 1), no analytical theory has been developed to date. According to numerical simulations [4], Wigner crystallization is expected in a very dilute regime, when rs reaches approximately 35. Refined numerical simulations [5] have predicted that prior to the crystallization, in the range of the interaction parameter 25 ≤ rs ≤ 35, the ground state of the system is a strongly correlated ferromagnetic Fermi liquid. At higher electron densities, rs ∼ 1, the electron liquid is expected to be paramagnetic, with the effective mass, m, and Lande´ g factor renormalized by interactions. Apart from the ferromagnetic Fermi liquid, other intermediate phases between the Wigner crystal and the paramagnetic Fermi liquid may also exist.