Critical Behavior of a Strongly Interacting 2D Electron System
A. Mokashi, Shiqi Li, B. Wen +4 more
With decreasing density n(s) the thermopower S of a low-disorder two-dimensional electron system in silicon is found to exhibit a sharp increase by more than an order of magnitude tending to a divergence at a finite disorder-independent density n(t) consistent with the critical form (-T/S) is proportional to (n(s)-n(t))(x) with x=1.0±0.1 (T is the temperature). Our results provide clear evidence for an interaction-induced transition to a new phase at low density in a strongly interacting 2D electron system.
arXiv:1111.7238•Physical Review Letters•Aug 28, 2012•60 citations