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Stark shift for ground and excited states of individual InAs quantum dots

Itskevich Ie, Rybchenko Si, Tartakovskii Ii, S.T. Stoddart, Aleksandr D. Levin, P. C. Main, L. Eaves, Mohamed Henini, Steven R. Parnell

Published Jan 1, 2001• 0 citations
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Journal of Physics Conference Series•May 18, 2012•0 citations
Simulations of two dimensional coherent photon echo (2D‐PE) spectra of self‐assembled InAs/GaAs quantum dots (QD) in different charged states are presented revealing the coupling between the individual mono‐exciton transitions and contributions of bi‐excitons . The information about the states is crucial for various application scenarios of QDs, like e.g. highly efficient solar cells. The simulations rely on a microscopic description of the electronic structure by high‐level atomistic many‐body pseudopotential calculations. It is shown that asymmetric diagonal peak shapes and double cross‐peaks are the result of state contributions to the PE signal by analyzing the contributions of the individual pathways excited state emission, ground state bleach and excited state absorption. The results show that from the detuned and contributions the bi‐exciton binding energies of the manifold are revealed in 2D‐PE signals.
The nonlinear optical phase shift in self-assembled InAs quantum dots (QDs) under resonant excitation in a ground-state transition was measured by a unique two-color pump∕probe ellipsometric polarization analysis. This ellipsometric analysis makes use of the large optical birefringence of SK-QD [(SK) — Stranski-Krastanov] originating from the asymmetric structure. A phase shift of 0.5π rad was obtained at an input pump pulse energy density of 30pJ∕μm2, a detuning of 11meV, and a time delay of 20ps in a 1mm long waveguide having QDs with a peak wavelength of 1290nm, a volume density of 4×1015cm−3, and inhomogeneous broadening of 35meV. Analysis revealed that the phase shift is mainly attributed to the absorption saturation for TE-polarized light, though other mechanisms also could contribute at higher pumping. The calculation, based on the two-level approximation, revealed that the minimum energy density for π shift is 240fJ∕μm2, calculated under ideal conditions.
We have analytically explored the nature of Stark shift and self energy correction in the presence of two discrete excitonic states i.e, the heavy-hole and light-hole valence bands, below the fundamental absorption edge of semiconductor quantum dots. The time dependent perturbation technique for a three-level system, under the near band gap resonant excitation regime, has been employed; with the incorporation of the relaxation and dephasing mechanisms phenomenologically. The detuning spectra of Stark shift and self energy correction and their dependence on a moderately strong electric field, have been analyzed. The numerical and analytical estimations in a weak noncentrosymmetric CdTe quantum dot show a decrease in Stark shift and an enhancement in self energy correction for both heavy-hole and light-hole excitons.