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Quantum Electronics and Laser Science Conference

Population dynamics of resonantly excited carriers in InAs quantum dots

Bonadeo, Bloch, Birkedal, Shah, Pfeiffer, West

Published Jan 1, 2000• 0 citations
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The gain and phase dynamics of InAs∕GaAs quantum dot amplifiers are studied using single and two-color heterodyne pump probe spectroscopy. The relaxation of the wetting layer carrier density is shown to have a strong effect on the phase dynamics of both ground and excited state transients, while having a much weaker effect on the gain dynamics. In addition, the dynamical alpha factor may also display a constant value after an initial transient. Such behavior is strongly encouraging for reduced pattern effect operation in high speed optical networks.