Correlation effects for chiral semiconducting single wall carbon nanotube: a density matrix renormalization group study

Fei Ye, Bing-Shen Wang, Jizhong Lou, Zhao-Bin Su

Published Mar 31, 2005• 0 citations

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Correlation effects for chiral semiconducting single wall carbon nanotube: a density matrix renormalization group study

Fei Ye, Bing-Shen Wang, Jizhong Lou, Zhao-Bin Su

Published Mar 31, 2005• 0 citations

OpenAlex

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The Study of Electron-Electron Interactions in Semi-Conducting Carbon Nanotubes Using a Numerical Renormalization Group

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Ying‐Zhong Ma, Matt W. Graham, Leonas Valkūnas +2 more

Springer series in chemical physicsJan 1, 20070 citations

Magnetic field effects and renormalization of the long-range Coulomb interaction in carbon nanotubes

Stefano Bellucci A, Pasquale Onorato

arXiv:cond-mat/0510590Annals of PhysicsNov 29, 20059 citations

Correlations in carbon nanotubes: A DMRG approach

Alexander Struck, Sebastián A. Reyes, Sebastian Eggert

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Correlation effects for semiconducting single-wall carbon nanotubes: A density matrix renormalization group study

Fei Ye, Bing-Shen Wang, Jizhong Lou +1 more

In this paper we report the applicability of the density matrix renormalization group (DMRG) approach to the cylindrical single wall carbon nanotube (SWCN) for the purpose of its correlation effect. By applying the DMRG approach to the $t+U+V$ model, with $t$ and $V$ being the hopping and Coulomb energies between the nearest neighboring sites, respectively, and $U$ the on-site Coulomb energy, we calculate the phase diagram for the SWCN with chiral numbers ( ${n}_{1}=3$ , ${n}_{2}=2$ ), which reflects the competition between the correlation energy $U$ and $V$ . Within reasonable parameter ranges, we investigate possible correlated ground states, the lowest excitations, and the corresponding correlation functions in which the connection with the excitonic insulator is particularly addressed.In this paper we report the applicability of the density matrix renormalization group (DMRG) approach to the cylindrical single wall carbon nanotube (SWCN) for the purpose of its correlation effect. By applying the DMRG approach to the $t+U+V$ model, with $t$ and $V$ being the hopping and Coulomb energies between the nearest neighboring sites, respectively, and $U$ the on-site Coulomb energy, we calculate the phase diagram for the SWCN with chiral numbers (${n}_{1}=3$, ${n}_{2}=2$), which reflects the competition between the correlation energy $U$ and $V$. Within reasonable parameter ranges, we investigate possible correlated ground states, the lowest excitations, and the corresponding correlation functions in which the connection with the excitonic insulator is particularly addressed.

arXiv:cond-mat/0503731Physical Review BDec 30, 20056 citations

Experimental straintronics in nanotube quantum dots

L. Huang, I. G. Rebollo, A. R. Champagne

Single-wall carbon nanotubes (SWCNTs) are narrow ribbons of graphene with atomically precise edges and a single quantum transport channel, at experimentally-relevant dopings. This makes them ideal systems to harness quantum transport straintronics (QTS), i.e. using mechanical strain to control accurately quantum transport. We present QTS data from three single-wall carbon nanotube quantum dot (SWCNT-QD) transistors over a broad range of in-situ tunable and reversible uniaxial strain ( $Δ\varepsilon_\text{mech}\approx$ 0 to 3 %). We first present the nanofabrication of the suspended SWCNT transistors whose channel lengths are $\approx$ 30 nm. The channels are strained by moving gold clamps holding firmly the nanotubes. We present detailed charge transport data, $dI/dV_{\text{B}} - V_{\text{B}} - V_{\text{G}}$ and $dI/dV_{\text{B}} - V_{\text{B}} - Δ\varepsilon_\text{mech}$ , showing a large mechanical-gating effect of the SWCNT-QDs. The precise reversibility of the data, and their agreement with QTS theory, confirms that the tubes are strained elastically. We demonstrate that the mechanical control of the QD doping is not due to capacitive-gating effects, but to quantitatively predictable bandstructure changes including a strain-tunable bandgap. This precise mechanical control of the doping and bandgap of SWCNT-QDs could find applications in qubits, condensed matter physics, and homojunction molecular transistors.Single-wall carbon nanotubes (SWCNTs) are narrow ribbons of graphene with atomically precise edges and a single quantum transport channel, at experimentally-relevant dopings. This makes them ideal systems to harness quantum transport straintronics (QTS), i.e. using mechanical strain to control accurately quantum transport. We present QTS data from three single-wall carbon nanotube quantum dot (SWCNT-QD) transistors over a broad range of in-situ tunable and reversible uniaxial strain ($Δ\varepsilon_\text{mech}\approx$ 0 to 3 %). We first present the nanofabrication of the suspended SWCNT transistors whose channel lengths are $\approx$ 30 nm. The channels are strained by moving gold clamps holding firmly the nanotubes. We present detailed charge transport data, $dI/dV_{\text{B}} - V_{\text{B}} - V_{\text{G}}$ and $dI/dV_{\text{B}} - V_{\text{B}} - Δ\varepsilon_\text{mech}$, showing a large mechanical-gating effect of the SWCNT-QDs. The precise reversibility of the data, and their agreement with QTS theory, confirms that the tubes are strained elastically. We demonstrate that the mechanical control of the QD doping is not due to capacitive-gating effects, but to quantitatively predictable bandstructure changes including a strain-tunable bandgap. This precise mechanical control of the doping and bandgap of SWCNT-QDs could find applications in qubits, condensed matter physics, and homojunction molecular transistors.

cond-mat.mes-hallCross-listedarXiv:2606.12180Jun 11, 2026

t+U+V

model, with

t

and

V

being the hopping and Coulomb energies between the nearest neighboring sites, respectively, and

U

the on-site Coulomb energy, we calculate the phase diagram for the SWCN with chiral numbers (

{n}_{1}=3

{n}_{2}=2

), which reflects the competition between the correlation energy

U

and

V

. Within reasonable parameter ranges, we investigate possible correlated ground states, the lowest excitations, and the corresponding correlation functions in which the connection with the excitonic insulator is particularly addressed.

Δ\varepsilon_\text{mech}\approx

0 to 3 %). We first present the nanofabrication of the suspended SWCNT transistors whose channel lengths are

\approx

30 nm. The channels are strained by moving gold clamps holding firmly the nanotubes. We present detailed charge transport data,

dI/dV_{\text{B}} - V_{\text{B}} - V_{\text{G}}

and

dI/dV_{\text{B}} - V_{\text{B}} - Δ\varepsilon_\text{mech}

, showing a large mechanical-gating effect of the SWCNT-QDs. The precise reversibility of the data, and their agreement with QTS theory, confirms that the tubes are strained elastically. We demonstrate that the mechanical control of the QD doping is not due to capacitive-gating effects, but to quantitatively predictable bandstructure changes including a strain-tunable bandgap. This precise mechanical control of the doping and bandgap of SWCNT-QDs could find applications in qubits, condensed matter physics, and homojunction molecular transistors.