Thin superconducting wires can be engineered as efficient end fast detectors for single photons. They are therefore promising tools for telecommunications or quantum information processing. We wants to extend the ideas on single photon superconducting detectors to the case of single electrons. Our goal is to integrate these devices on atom-chips in order to detect trapped Rydberg atoms that can be easily ionized. We have designed simple NbN wire detectors and developped a complete setup for caracterizing our samples under a cryogenic scanning electron microscop. The detectors are fabricated by e-beam lithography on a NbN layer sputtered on a MgO wafer. Our test samples are cooled down to 8 K under the column of a conventionnal SEM whose electronic beam current and energy are precisely controlled. The use of a focused electron beam, smaller than the wire dimensions, gives access to local properties of the detector. We are able to make a complete map of the detection efficiency over the whole wire. We observe local inhomogeneities like white (high efficiency) or dark (no detection at all) areas. Systematic studies of the efficiency as a function of the bias current in the wire or the electron beam energy were carried out.
Thin superconducting wires can be engineered as efficient end fast detectors for single photons. They are therefore promising tools for telecommunications or quantum information processing. We wants to extend the ideas on single photon superconducting detectors to the case of single electrons. Our goal is to integrate these devices on atom-chips in order to detect trapped Rydberg atoms that can be easily ionized. We have designed simple NbN wire detectors and developped a complete setup for caracterizing our samples under a cryogenic scanning electron microscop. The detectors are fabricated by e-beam lithography on a NbN layer sputtered on a MgO wafer. Our test samples are cooled down to 8 K under the column of a conventionnal SEM whose electronic beam current and energy are precisely controlled. The use of a focused electron beam, smaller than the wire dimensions, gives access to local properties of the detector. We are able to make a complete map of the detection efficiency over the whole wire. We observe local inhomogeneities like white (high efficiency) or dark (no detection at all) areas. Systematic studies of the efficiency as a function of the bias current in the wire or the electron beam energy were carried out.
Superconducting NbN wires have recently received attention as detectors for visible and infrared photons [1]. We present experiments in which we use a NbN wire for high-efficiency (≃ 40%) detection of single electrons with keV energy. We use the beam of a scanning electron microscope as a focussed, stable, and calibrated electron source. Scanning the beam over the surface of the wire provides a map of the detection efficiency. This map shows features as small as 150 nm, revealing wire inhomogeneities. The intrinsic resolution of this mapping method, superior to optical methods, provides the basis of a characterization tool relevant for photon detectors.
Superconducting single-photon detectors can detect photons from the UV to the infrared with quantum efficiencies above 90% and greater than MHz count rates. They consist of narrow, thin wires of superconductor biased near their critical current. When these wires absorb a photon, part of the wire stops superconducting and becomes resistive. This transition and sudden jump in resistance is what enables the detection of the photon. Over the past two decades, these devices have matured greatly as a technology and have found many applications ranging from quantum optics to astronomy. However, there are still multiple theories of the dominant mechanism behind these devices. Recently proposed theories suggest a more complicated but potentially more powerful detection mechanism, and experiments are only recently starting to demonstrate this effect and its potential applications. In this research, the capability to fabricate these intricate devices was developed. This requires high-quality deposition of the superconductors, precise machining of the devices with electron beam lithography, and accurate etching of the films. Many parts of the process have been characterized. Additionally, two new directions are being explored. The first attempts to exploit the recently proposed detection mechanism to make detectors with much wider wires, leading to faster detection rates. The second is the fabrication of superconducting single-photon detectors directly onto optical fibers, eliminating the need for complicated coupling structures and alignment of the detector with the fiber.
Nanowire superconducting single photon detectors (SSPDs) [1] are characterized by very high sensitivity in the near infrared (detection efficiency η up to 30%, for a dark count rate DK of few Hz), speed (up to ∼1 GHz repetition rate) and time resolution (jitter of 20 ps full width at half maximum, FWHM). They can be operated at temperatures near 4 K, so they can be packaged in cryogenic dipsticks or cryogen-free refrigerators. These features make SSPDs the most promising detectors for telecom-wavelength single-photon counting applications. The basic structure of an SSPD is a narrow (w=50 to 120 nm), thin (th∼4-10 nm) NbN superconducting nanowire folded in a meander pattern. The typical detector active area (i.e. the size of the pixel) is Ad=10 × 10 µm2 (which allows an efficient coupling with the core of optical fibers at telecom wavelengths) with filling factor (f, the ratio of the area occupied by the superconducting meander to the device total area) ranging from 40% to 60%. The meanders are embedded in a 50 Ω coplanar transmission line. At present, the SSPD detection efficiency is limited by its absorbance (α, the ratio of the number of photons absorbed in the nanowire to the number of incident photons on the device active area). Indeed, it has been shown that in the classic front-illumination configuration α cannot exceed 30%. Our approach to increase α consists in integrating SSPDs with advanced optical structures such as distributed Bragg reflectors (DBRs) and optical waveguides. This requires to transfer the challenging SSPD technology (i.e. the deposition of high-quality few-nm thick NbN films and the nano-patterning by electron beam lithography, EBL) from the usual comfortable substrates, i.e. sapphire and MgO, which are known to allow the deposition of few-nm thick NbN films of excellent quality, to an optical substrate like GaAs, on which DBRs and waveguides can be easily obtained. Our first task was then to optimize a process for the deposition of high-quality few-nm thick NbN films on GaAs and AlAs/GaAs-based DBRs. Because of the requirement of compatibility with GaAs, the substrate temperature used for the depositions is 400°C, in order to prevent As evaporation. As GaAs and DBRs are highly mismatched substrates, the deposition parameters were first optimized with respect to the superconducting properties of NbN films on MgO substrates, which allow the growth of high crystal quality NbN films at low temperature. This made easier to separate the influence of stoichiometry from that of microstructure. The optimized deposition parameters were then used to grow NbN films on GaAs and DBRs, under the reasonable assumption (later checked and confirmed) that changing the substrate would not produce a change in film stoichiometry, but only in its microstructure. NbN films ranging from 150nm to 3nm in thickness were then deposited on epitaxial-quality single crystal MgO, GaAs and DBRs structures. The deposition technique is the current controlled DC magnetron sputtering (planar, circular, balanced configuration) of Nb in an Ar + N2 plasma. NbN films deposited on MgO exhibit superconducting critical temperature ΤC=10 Κ, superconducting transition width ΔΤC=0.8 Κ and residual resistivity ratio RRR=R(20K)/R(300K)=0.8 for th=4 nm, which are state of the art values, proof of the excellent quality of our low-temperature deposition process. The quality of films deposited on GaAs and on DBRs is lower than that of NbN deposited on MgO, as for any thickness they systematically exhibit higher ΔΤC and lower ΤC and RRR. However, 5.5 nm-thick NbN films on GaAs still exhibit ΤC=10.7 Κ, ΔΤC=1.1 Κ and RRR=0.7, which compares with 4.5 nm thick films on MgO, making them suitable for device fabrication. To our knowledge, the growth of such high quality thin NbN films on GaAs and DBRs, has never been reported in literature. The degradation of the superconducting properties exhibited by NbN films on GaAs and DBRs was attributed to a highly defected microstructure, due both to a higher lattice misfit between NbN and GaAs and to a poorer quality of the substrate surface. Encouraging preliminary results show that the quality of these films can be improved either cleaning the GaAs/DBR substrate surface more effectively or adding an MgO buffer layer. SSPDs were fabricated on thin NbN films (th=3-7 nm) deposited under optimal conditions on MgO and GaAs by EBL and reactive ion etching. The geometrical parameters of our detectors are: Ad=5×5 µm2, w=60-200 nm, f=40%-60%. The devices were then characterized both electrically and optically. I-V curves of test structures were measured, from which it was possible to deduce important physical parameters used as figures of merit to estimate the superconducting properties of the nanowires, or for the design and the simulation of the devices. The quality of the devices fabricated on GaAs is poorer than those on MgO, most likely due to the lower quality of NbN films deposited on GaAs and to issues related to the EBL nano-patterning step. Measurements of η and of DK as a function of the bias current were performed on SSPDs fabricated on MgO and GaAs. The best performance was exhibited by a w=100 nm, f=40%, th=4 nm meander, showing η=20% and noise equivalent power NEP=10-16 W/Hz1/2 (at λ=1.3 µm and T=4.2 K), which are state of the art values. This result showed for the first time that high performance NbN SSPDs can be realized on a different substrate and from a deposition process at lower temperature than previously reported. High detection efficiencies could not be measured with SSPDs fabricated on GaAs, but it should be noted that at present only first-generation devices (fabricated on GaAs substrates of poor surface quality) have been tested. Better results are expected from devices fabricated on the improved NbN films grown on clean or MgO-buffered GaAs substrates. Although SSPDs on MgO have shown high detection efficiency, the fabrication yield of high performance detectors has to be improved. Variations of the critical current along a nanowire are responsible for the wide distribution in efficiency values of nominally identical SSPDs. In order to understand the physical origin of the nanowire constrictions (i.e. regions of suppressed superconductivity) we performed a spatially-resolved characterization of η of a long straight nanowire, followed by a high resolution SEM (scanning electron microscope) scan on its whole length. Two types of inhomogeneities were evidenced, corresponding to localized efficiency dips and peaks. The peaks likely correspond to constrictions. SEM observations did not evidence any width narrowing at the position of the efficiency peaks, which suggests that constrictions might be due to thickness or quality inhomogeneities of the film occurring during the film deposition or later in the process. On the other hand, the efficiency dips have been correlated with lithography problems discovered on SEM images. Finally, a new photon number resolving detector, the Parallel Nanowire Detector (PND), has been demonstrated, which significantly outperforms existing approaches in terms of sensitivity, speed and multiplication noise in the telecommunication wavelength range. In particular, it provides a repetition rate (80 MHz) three orders of magnitude larger than any existing detector at telecom wavelength, and a sensitivity (NEP=4.2×10-18 W/Hz1/2) one-two orders of magnitude better, with the exception of transition-edge sensors (which require a much lower operating temperature). An electrical equivalent model of the device was developed in order to study its operation. The modeling predicts a physical limit to the reset time of the PND, which is lower than initially estimated. Furthermore, the figures of merit of the device performance in terms of efficiency, speed and sensitivity were defined and their dependency on the design parameters analyzed. Additionally, we developed modeling tools to fully characterize the device and an algorithm to estimate the photon number statistics of an unknown light using the PND. The reconstruction proved to be successful only for low photon fluxes, most likely due to the limited counting capability and the poor calibration of the detector. The PND, with its high repetition rate and high sensitivity, is then suitable for measuring an unknown photon number probability distribution assuming accurate calibration and sufficient counting capability. ______________________________[1] G. N. Gol'tsman, O. Okunev, G. Chulkova, A. Lipatov, A. Semenov, K. Smirnov, B. Voronov, A. Dzardanov, C. Williams, and R. Sobolewski, Appl. Phys. Lett. 79, 705 (2001).
We report the detection of single electrons using a Nb0.7Ti0.3N superconducting wire deposited on an oxidized silicon substrate. While it is known that this device is sensitive to single photons, we show that it also detects single electrons with kilo-electron-volt energy emitted from the cathode of a scanning electron microscope with an efficiency approaching unity. The electron and photon detection efficiency map of the same device are in good agreement. We also observe detection events outside the active area of the device, which we attribute to sensitivity to backscattered electrons.
Superconducting nanowires have been used to detect single photons for more than 20 years. The basic principle is that photons can perturb superconducting Cooper pairs and thereby create a resistive hotspot, which produces a current-crowding effect. This current-crowding effect reduces the superconducting energy gap near the hotspot, which results in the nanowire changing from a superconducting to a normal state near the hotspot. The resulting high impedance causes the current to be squeezed into a high frequency coaxial wire connected in parallel with it, which finally produces a measurable voltage pulse. Thanks to the maturity of current micro- and nano- fabrication techniques, high quality superconducting thin films and nano-wires have been realized in a variety of materials such as NbN, WSi, MoSi and others. These techniques include magnetron sputtering, physical vapor deposition, electron beam lithography, optical lithography, reactive ion etching, wafer cutting, etc. Measurements of superconducting single-photon detectors require cryogenic refrigeration systems, ranging from the initial liquid helium cold tank, to modern dry dilution refrigerators. On one hand, a superconducting device needs to be cooled down below its critical temperature to work. On the other hand, photon-detection events generate hot spots, which release heat to the device substrate, which the refrigerator needs to efficiently take away. Research on superconducting nanowire single-photon detectors (SNSPDs) has made significant advancements over the past two decades, including high detection efficiency, low dark counts, and broad wavelength range capabilities. Beyond improvements in traditional NbN, WSi and MoSi superconducting nanowires, there have been numerous efforts to develop high-temperature superconducting nanowires, such as MgB2 and Bi2Sr2CaCu2O8 (BSCCO), due to the operational limitations imposed by low-temperature superconducting materials. Typically, single-photon detectors require operation temperatures below the critical temperature. High-temperature superconducting nanowire single-photon detectors have currently reported to exhibit the highest operating temperature around 20 K in BSCCO, which is much lower than its critical temperature of 80 K, showing that large-gap superconductors have a comparably low sensitivity to low-energy photons. In recent years since 2018, several groups have reported that micrometer-wide superconducting wires can also be used for single-photon detection, unlike the conventional nanometer-wide superconducting wires. In general, as long as the bias current is uniformly distributed in superconducting wires and approaches the critical Cooper pair-breaking current, the hot spots generated by photon absorption can induce vortices and anti-vortices, and their motion under the action of the Lorentz force generates resistance and voltage, which ultimately produces a normal state region. An increase of the wire width to the micron scale offers more freedom to design new detectors based on current nano- and microfabrication techniques. In this doctoral dissertation, I will first introduce the basic Ginzburg-Landau theory of superconductivity and the measurement theory of superconducting circuits related to single-photon detection. I will then provide a detailed description of the equipment construction and sample fabrication techniques used in the experiment. Finally, I will present my two main studies: in one project I examined the photon-detection performance of superconducting micro-wires with a multi-pinhole structure, the correlation between dark counts and magnetic vortices, as well as the properties of critical current in magnetic fields. In a subsequent study I conducted numerical simulations using the time dependent Ginzburg-Landau equation, to analyze the dynamics of vortices in superconducting micro-strips with regular large-area perforations by pinholes as a function of magnetic field and bias current. The thus obtained predictions were then successfully confirmed in a detailed experimental study on a series of microwires.
Superconducting single photon detectors consist of a narrow and thin wire of superconductor and can detect single photons with high efficiency and high speed. Simultaneous optimization of the detection efficiency and detector response time is difficult because the response time is set by the dimensions of the wire (cross section and length) while the detection efficiency is determined by both the internal detection mechanism and the dimensions of the wire. Wider and shorter wires are easier to fabricate, are more robust and lead to shorter detector reset time, but are generally less efficient. Experiments employing detector tomography provide important insights into the photon detection mechanism and indicate a detection mechanism where the edges of the wire are more efficient. This leads to a position dependent local detection efficiency that can be explained in the context of a photon-assisted-vortex-entry model and predicts an optimum wire width ~70 nm. A 50 nm wide silicon nanowire deposited on top of a 150 nm wide NbN nanowire directs light at 1550 nm wavelength to the edges and improves both the total absorption efficiency and the internal detection efficiency of the wire. The total absorption efficiency can be enhanced by 30% while the internal detection efficiency is increased by 70%. Assuming that the wire covers a similar area the detector response time is reduced 4-fold compared to the standard design using a 70 nm wide wire.