Superconducting single-photon detectors can detect photons from the UV to the infrared with quantum efficiencies above 90% and greater than MHz count rates. They consist of narrow, thin wires of superconductor biased near their critical current. When these wires absorb a photon, part of the wire stops superconducting and becomes resistive. This transition and sudden jump in resistance is what enables the detection of the photon. Over the past two decades, these devices have matured greatly as a technology and have found many applications ranging from quantum optics to astronomy. However, there are still multiple theories of the dominant mechanism behind these devices. Recently proposed theories suggest a more complicated but potentially more powerful detection mechanism, and experiments are only recently starting to demonstrate this effect and its potential applications. In this research, the capability to fabricate these intricate devices was developed. This requires high-quality deposition of the superconductors, precise machining of the devices with electron beam lithography, and accurate etching of the films. Many parts of the process have been characterized. Additionally, two new directions are being explored. The first attempts to exploit the recently proposed detection mechanism to make detectors with much wider wires, leading to faster detection rates. The second is the fabrication of superconducting single-photon detectors directly onto optical fibers, eliminating the need for complicated coupling structures and alignment of the detector with the fiber.
Superconducting single-photon detectors can detect photons from the UV to the infrared with quantum efficiencies above 90% and greater than MHz count rates. They consist of narrow, thin wires of superconductor biased near their critical current. When these wires absorb a photon, part of the wire stops superconducting and becomes resistive. This transition and sudden jump in resistance is what enables the detection of the photon. Over the past two decades, these devices have matured greatly as a technology and have found many applications ranging from quantum optics to astronomy. However, there are still multiple theories of the dominant mechanism behind these devices. Recently proposed theories suggest a more complicated but potentially more powerful detection mechanism, and experiments are only recently starting to demonstrate this effect and its potential applications. In this research, the capability to fabricate these intricate devices was developed. This requires high-quality deposition of the superconductors, precise machining of the devices with electron beam lithography, and accurate etching of the films. Many parts of the process have been characterized. Additionally, two new directions are being explored. The first attempts to exploit the recently proposed detection mechanism to make detectors with much wider wires, leading to faster detection rates. The second is the fabrication of superconducting single-photon detectors directly onto optical fibers, eliminating the need for complicated coupling structures and alignment of the detector with the fiber.
Superconducting nanowires have been used to detect single photons for more than 20 years. The basic principle is that photons can perturb superconducting Cooper pairs and thereby create a resistive hotspot, which produces a current-crowding effect. This current-crowding effect reduces the superconducting energy gap near the hotspot, which results in the nanowire changing from a superconducting to a normal state near the hotspot. The resulting high impedance causes the current to be squeezed into a high frequency coaxial wire connected in parallel with it, which finally produces a measurable voltage pulse. Thanks to the maturity of current micro- and nano- fabrication techniques, high quality superconducting thin films and nano-wires have been realized in a variety of materials such as NbN, WSi, MoSi and others. These techniques include magnetron sputtering, physical vapor deposition, electron beam lithography, optical lithography, reactive ion etching, wafer cutting, etc. Measurements of superconducting single-photon detectors require cryogenic refrigeration systems, ranging from the initial liquid helium cold tank, to modern dry dilution refrigerators. On one hand, a superconducting device needs to be cooled down below its critical temperature to work. On the other hand, photon-detection events generate hot spots, which release heat to the device substrate, which the refrigerator needs to efficiently take away. Research on superconducting nanowire single-photon detectors (SNSPDs) has made significant advancements over the past two decades, including high detection efficiency, low dark counts, and broad wavelength range capabilities. Beyond improvements in traditional NbN, WSi and MoSi superconducting nanowires, there have been numerous efforts to develop high-temperature superconducting nanowires, such as MgB2 and Bi2Sr2CaCu2O8 (BSCCO), due to the operational limitations imposed by low-temperature superconducting materials. Typically, single-photon detectors require operation temperatures below the critical temperature. High-temperature superconducting nanowire single-photon detectors have currently reported to exhibit the highest operating temperature around 20 K in BSCCO, which is much lower than its critical temperature of 80 K, showing that large-gap superconductors have a comparably low sensitivity to low-energy photons. In recent years since 2018, several groups have reported that micrometer-wide superconducting wires can also be used for single-photon detection, unlike the conventional nanometer-wide superconducting wires. In general, as long as the bias current is uniformly distributed in superconducting wires and approaches the critical Cooper pair-breaking current, the hot spots generated by photon absorption can induce vortices and anti-vortices, and their motion under the action of the Lorentz force generates resistance and voltage, which ultimately produces a normal state region. An increase of the wire width to the micron scale offers more freedom to design new detectors based on current nano- and microfabrication techniques. In this doctoral dissertation, I will first introduce the basic Ginzburg-Landau theory of superconductivity and the measurement theory of superconducting circuits related to single-photon detection. I will then provide a detailed description of the equipment construction and sample fabrication techniques used in the experiment. Finally, I will present my two main studies: in one project I examined the photon-detection performance of superconducting micro-wires with a multi-pinhole structure, the correlation between dark counts and magnetic vortices, as well as the properties of critical current in magnetic fields. In a subsequent study I conducted numerical simulations using the time dependent Ginzburg-Landau equation, to analyze the dynamics of vortices in superconducting micro-strips with regular large-area perforations by pinholes as a function of magnetic field and bias current. The thus obtained predictions were then successfully confirmed in a detailed experimental study on a series of microwires.
Superconducting single-photon detectors have been shown to have extremely high detection efficiency over a large wavelength range, typically exceeding 90 % [1, 2]. Their use in quantum and classical optics is becoming more and more widespread in part due to improvements to and ease of use of the cryogenic packaging. In this talk, we will review two superconducting detector technologies, the superconducting nanowire single-photon detector (SNSPD) and the optical transition-edge sensor (TES) [3], that are being developed at NIST. We will also describe their applications in quantum and classical optics and present our recent effort to use these detectors as calibration standards, as well as our effort to establish a single-photon detector calibration service. Superconducting Nanowire Single Photon Detectors The SNSPD is based on a meandering, narrow, thin superconducting nanowire, current-biased close to its critical current. Our SNSPDs operate at temperatures around 1K. When a photon is absorbed in the detection region, the energy deposited drives the wire normal and a voltage pulse can be observed. Due to the speed of the detection process, the SNSPD offers high timing resolution along with detection of the photon flux at the shot-noise limit. The combination of both these features yields a detector that can measure the photon’s arrival time from a faint object or source. SNSPDs also offer single-photon detection capability beyond the wavelength detection range of silicon and InGaAs, out to at least 5000 nm [4]. SNSPDs were also recently implemented in an 8×8-pixel array enabling low-resolution, real-time imaging [5]. For our calibration service effort, we built an SNSPD system that can be used as a transfer standard between labs for single-photon detector calibrations. Transition Edge Sensors In contrast to the SNSPD, the TES is a photon-number resolving detector that has almost unity detection efficiency. The TES consists of a superconducting thin film, voltage-biased so that its resistance is in the transition between the superconducting regime and the normal conducting regime. The steep slope of the resistive transition allows for small temperature changes to be measured. The TES is designed such that the absorption of a single photon increases the temperature of the superconducting film enough to discern the resulting signal from the TES system noise. Therefore, the TES needs to be electrically and thermally quiet and is generally operated at temperatures around 100 mK. Due to its energy resolving capability, the TES can be also used as a spectrally resolving single-photon detector with limited resolution [6]. The TES can also be operated as a cryogenic radiometer in combination with an electrical substitution method, and can, in principle, yield absolute calibration of optical powers on the order of a few tens of femtowatts [7]. References 1 A. E. Lita, A. J. Miller, and S. W. Nam, Opt. Express 16, 3032 (2008). 2 F. Marsili, et al., Nat Photon 7, 210 (2013). 3 R. Hadfield and G. Johansson, Superconducting Devices in Quantum Optics (Springer, 2016). 4 F. Marsili, et al., in CLEO: 2013 (OSA, San Jose, California, 2013), p. CTu1H.1. 5 M. S. Allman, et al., Applied Physics Letters 106, 192601 (2015). 6 M. Fortsch, et al., Journal of Optics 17, 065501 (2015). 7 N. A. Tomlin, J. H. Lehman, and S. Nam, Optics Letters 37, 2346 (2012).
Superconducting devices offer the potential to perform at speeds and detection efficiencies higher than what is possible using conventional technologies (such as semiconducting avalanche photodiodes and photomultiplier tubs) for wavelengths from the ultraviolet to the mid-infrared. As a result, there has been increasing interest in using superconducting optical photon detectors in a variety of applications. There has been significant progress in using these types of detectors in areas of basic research such as quantum information science and quantum optics. These applications require detectors that have extremely low dark count rates, high count rates, and high quantum efficiency. I will begin by describing some of our earlier work on superconducting Transition-Edge Sensor (TES). In particular, I will describe some of the engineering involved in the cryogenic, electrical, and optical packaging so that these devices can be easily coupled into fiber-based optics. I will also describe our recent work on developing superconducting nanowire single photon detectors (SNSPD or SSPD). An SNSPD is an ultra-thin, ultra-narrow (nm scale) superconducting meander that is current biased just below its critical current density. When one or more photon is absorbed, a hot spot is formed that causes the superconductor to develop a resistance and consequently a voltage pulse. At NIST and JPL, we have been developing nanowire detectors using an amorphous alloy of tungsten-silicide. We will describe to construct systems using tungsten-silicide nanowires to achieve high detection efficiency (>90% at 1550nm). I will also describe our work to improve the performance of the device by fabricating multiple nanowires in an electrically parallel structure to implement a superconducting nanowire avalanche photodiode (SNAP)[1]. One example of this type of detector is shown in Fig 1. In this case, there are two tungsten silicide layers separated by a dielectric layer to optimize detection of light for any polarization[2]. In addition, progress on other types of SNAP detectors will be described to increase the signal size from a single photon, reduce the recovery time of the device, and to improve the jitter.
Superconducting single-photon detectors (SSPDs) have developed into a mature device technology and excel due outstanding performance metrics, in particular high detection efficiency combined with high time resolution and low dark count rate for a wide wavelength range from the visible to the mid-infrared. In addition to commercially available systems with devices coupled to optical fibers, SSPDs can be integrated with photonic circuits using scalable nanofabrication technologies. Here, we will present recent progress on SSPDs based on NbTiN thin films and their integration on different photonic material platforms. Our process for NbTiN growth at room temperature will be described, using magnetron reactive co-sputtering to achieve high-quality superconducting layers down to thicknesses of few nanometres. Optimized SSPD devices are realized by tuning the superconducting properties of NbTiN thin films, adjusting the material composition and nanocrystalline structure. The realization of different types of detectors and geometries will be shown, including nanofabrication techniques for achieving fully suspended nanowire structures. Furthermore, we will discuss challenges and prospects for scaling-up SSPD device technology as well as detector systems. Multiplexing schemes such as dispersion engineering of superconducting transmission lines will be highlighted as powerful approach to address multiple detectors and reduce the number of required feedthroughs and electrical lines in the cryostat. Eventually, exemplary applications of SSPDs for photon counting in quantum optics and light detection and ranging (LIDAR) will be outlined.
There is increasing interest in using superconducting optical photon detectors in a variety of applications. These applications require detectors that have extremely low dark count rates, high count rates, and high quantum efficiency. I will describe our work on two types of superconducting detectors, the Superconducting Nanowire Single Photon Detector (SNSPD or nSSPD) and superconducting Transition-Edge Sensor (TES). An SNSPD is an ultra-thin, ultra-narrow (nm scale) superconducting meander that is current biased just below its critical current density. When one or more photon is absorbed, a hot spot is formed that causes the superconductor to develop a resistance and consequently a voltage pulse. At NIST and JPL, we have been developing nanowire detectors using an amorphous alloy of tungsten-silicide. An example of this detector is shown in Fig 1(a). In this case, there are two tungsten silicide layers separated by a dielectric layer to optimize detection of light for any polarization[1]. Fig 1(b) is an example of a TES detector with gold cooling fins to enhance timing of the detector[2]. By exploiting the sharp superconducting-to-normal resistive transition of tungsten at 100mK, TES detectors give an output signal that is proportional to the cumulative energy in an absorption event. This proportional pulse-height enables the determination of the energy absorbed by the TES and the direct conversion of sensor pulse-height into photon number. I will discuss our progress towards developing both types of detectors with quantum efficiencies approaching 100%.
Superconducting single photons detectors (SSPDs) have emerged in recent years as a promising alternative for
fast and sensitive infrared detectors working in the photon counting mode. In particular, those detectors combine
very low dark count rates (below 1 Hz), high speed (above 1 GHz), photon number resolution and reasonable
quantum efficiency (10% at telecom wavelengths). They already found applications in quantum cryptography
systems and integrated circuit failure analysis, but could also be used as ultimate sensors in matrix configurations.
We show here the optimization of SSPD fabrication and their optical metrology at CEA. SSPD are fabricated
by patterning a 80 nm wide nanowire in a very thin (4 nm) NbN film on sapphire, forming a pixel of several
microns size. A cryogenic all-fibered optoelectronic system has been developed and allows precise metrology of
the optical performances of SSPD. When biasing near the critical current of the nanowire, we demonstrate a
detection quantum efficiency of 8% at 1.55 µm, which is also found to be strongly polarization dependent. This
quantum efficiency being limited by optical absorption, we propose a prism coupling based absorption enhancing
structure that allows reaching 100% quantum efficiency.