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Conference on Lasers and Electro-Optics

Hybrid Integration of Solid-State Quantum Emitters with a Silicon Chip

Je‐Hyung Kim, Shahriar Aghaeimeibodi, Christopher J. K. Richardson, Richard P. Leavitt, Dirk Englund, Edo Waks A

Published Jan 1, 2018• 0 citations
Publisher

Abstract

Efficient generation and control of quantum light on a chip is very important to achieve scalable quantum photonic systems. Solid-state quantum emitters can generate single photons with high efficiency, while silicon photonic circuits can manipulate them in an integrated device structure. Combining these two material platforms, therefore, enable us to utilize the advantages of both systems and make feasible integrated quantum photonic devices. We demonstrate hybrid integration of solid-state quantum dots to a silicon photonic device by using a pick-and-place technique and perform Hanbury-Brown and Twiss experiments on the silicon chip with integrated quantum emitters.

DOI
10.1364/cleo_si.2018.sw3b.2

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Efficient generation and control of quantum light on a chip is very important to achieve scalable quantum photonic systems. Solid-state quantum emitters can generate single photons with high efficiency, while silicon photonic circuits can manipulate them in an integrated device structure. Combining these two material platforms, therefore, enable us to utilize the advantages of both systems and make feasible integrated quantum photonic devices. We demonstrate hybrid integration of solid-state quantum dots to a silicon photonic device by using a pick-and-place technique and perform Hanbury-Brown and Twiss experiments on the silicon chip with integrated quantum emitters.
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The creation of a quantum photonic integrated circuit, bringing together quantum light sources; detectors; and elements for routing and modulating the photons; is a fundamental step towards a compact and self-contained quantum information processor. Here we report on the realisation of a new hybrid integration platform for InAs Quantum Dot-based quantum light sources and waveguide-based photonic circuits. In this scheme, GaAs devices containing embedded quantum dots are bonded to a silicon oxynitride waveguide circuit such that the quantum dot emission is coupled to the waveguide mode. The output from the waveguide element is coupled into optical fibre (also bonded to the waveguide chip) and the whole assembly is cooled to cryogenic temperatures. Integrated tuneable Mach-Zehnder interferometers permit on-chip photon routing to be achieved and allow the device to act as a path-encoded qubit preparation device. By utilising one such interferometer as a reconfigurable beam splitter, the single photon nature of the emission was confirmed by a Hanbury Brown and Twiss measurement on chip.
Fundamental to integrated photonic quantum computing is an on-chip method for routing and modulating quantum light emission. We demonstrate a hybrid integration platform consisting of arbitrarily designed waveguide circuits and single-photon sources. InAs quantum dots (QD) embedded in GaAs are bonded to a SiON waveguide chip such that the QD emission is coupled to the waveguide mode. The waveguides are SiON core embedded in a SiO2 cladding. A tuneable Mach Zehnder interferometer (MZI) modulates the emission between two output ports and can act as a path-encoded qubit preparation device. The single-photon nature of the emission was verified using the on-chip MZI as a beamsplitter in a Hanbury Brown and Twiss measurement.
Fundamental to integrated photonic quantum computing is an on-chip method for routing and modulating quantum light emission. We demonstrate a hybrid integration platform consisting of arbitrarily designed waveguide circuits and single-photon sources. InAs quantum dots (QD) embedded in GaAs are bonded to a SiON waveguide chip such that the QD emission is coupled to the waveguide mode. The waveguides are SiON core embedded in a SiO2 cladding. A tuneable Mach Zehnder interferometer (MZI) modulates the emission between two output ports and can act as a path-encoded qubit preparation device. The single-photon nature of the emission was verified using the on-chip MZI as a beamsplitter in a Hanbury Brown and Twiss measurement.
The demand for integrated photonic chips combining the generation and manipulation of quantum states of light is steadily increasing, driven by the need for compact and scalable platforms for quantum information technologies. While photonic circuits with diverse functionalities are being developed in different single material platforms, it has become crucial to realize hybrid photonic circuits that harness the advantages of multiple materials while mitigating their respective weaknesses, resulting in enhanced capabilities. Here, we demonstrate a hybrid III-V/silicon quantum photonic device combining the strong second-order nonlinearity and direct band gap of the III-V semiconductor platform with the high maturity and CMOS compatibility of the silicon photonic platform. Our device embeds the spontaneous parametric down-conversion (SPDC) of photon pairs into an Al Ga As source and their vertical routing to an adhesively bonded silicon-on-insulator circuitry, within an evanescent coupling scheme managing both polarization states. This enables the on-chip generation of broadband ( > 40 nm) telecom photons by type-0 and type-2 SPDC from the hybrid device, at room temperature and with internal pair generation rates exceeding 10 5 s − 1 for both types, while the pump beam is strongly rejected. Two-photon interference with 92% visibility (and up to 99% upon 5-nm spectral filtering) proves the high energy-time entanglement quality of the produced quantum state, thereby enabling a wide range of quantum information applications on chip, within a hybrid architecture compliant with electrical pumping and merging the assets of two mature and highly complementary platforms in view of out-of-the-lab deployment of quantum technologies. Published by the American Physical Society 2024