The superconducting Josephson phase qubit device was fabricated by a NbN/AlN-based technology with the goal to carry out the spectroscopy of parasitic quantum two-level systems (TLSs) in the AlN tunnel barrier by combining qubit spectroscopy with mechanical strain tuning. So far all existing results on TLS spectroscopy have been obtained on Al-based Josephson qubits and thus only TLSs in amorphous aluminum oxide barriers were studied. Understanding the physics of TLS and TLS-induced decoherence requires a study of individual TLSs in tunnel barriers made from different materials. The layout of the NbN/AlN device was optimized to improve the magnetic flux coupling between the flux bias coil and the qubit loop and to minimize the unwanted coupling to the dc-readout SQUID. The area of the SiO insulation under wiring layer was made as small as possible in order to decrease the number of TLSs which can contribute to the suppression of the coherence time. The NbN/AlN Josephson phase qubit was tested in a 3He/4He dilution refrigerator at a temperature of about 60 mK by measuring Rabi oscillations and the energy relaxation time TD. Rabi oscillations had a mean decay time of about of 3-5 ns. We performed systematic studies of TD by varying the power and duration of a resonant microwave pulse. We observe a large enhancement of the qubit's relaxation time for longer microwave pulses. We explain this effect by microwave induced suppression of spontaneous qubit emission.
The superconducting Josephson phase qubit device was fabricated by a NbN/AlN-based technology with the goal to carry out the spectroscopy of parasitic quantum two-level systems (TLSs) in the AlN tunnel barrier by combining qubit spectroscopy with mechanical strain tuning. So far all existing results on TLS spectroscopy have been obtained on Al-based Josephson qubits and thus only TLSs in amorphous aluminum oxide barriers were studied. Understanding the physics of TLS and TLS-induced decoherence requires a study of individual TLSs in tunnel barriers made from different materials. The layout of the NbN/AlN device was optimized to improve the magnetic flux coupling between the flux bias coil and the qubit loop and to minimize the unwanted coupling to the dc-readout SQUID. The area of the SiO insulation under wiring layer was made as small as possible in order to decrease the number of TLSs which can contribute to the suppression of the coherence time. The NbN/AlN Josephson phase qubit was tested in a 3He/4He dilution refrigerator at a temperature of about 60 mK by measuring Rabi oscillations and the energy relaxation time TD. Rabi oscillations had a mean decay time of about of 3-5 ns. We performed systematic studies of TD by varying the power and duration of a resonant microwave pulse. We observe a large enhancement of the qubit's relaxation time for longer microwave pulses. We explain this effect by microwave induced suppression of spontaneous qubit emission.
This thesis examines the behavior of dc SQUID phase qubits in terms of their proposed use in a quantum computer. In a phase qubit, the two lowest energy states (n=0 and n=1) of a current-biased Josephson junction form the qubit states, with the gauge invariant phase difference across the junction being relatively well defined. In a dc SQUID phase qubit, the Josephson junction is isolated from the environment using an inductive isolation network and Josephson junction, which are connected across the phase qubit junction to form a dc SQUID. Five dc SQUID phase qubits were examined at temperatures down to 25 mK. Three of the devices had qubit junctions that were Nb/AlOx/Nb junctions with critical currents of roughly 30 microamps. The other two had Al/AlOx/Al junctions with critical currents of roughly 1.3 microamps. The device that had the best performance was an Al/AlOx/Al device with a relaxation time of 30 ns and a coherence time of 24 ns. The devices were characterized using microwave spectroscopy, Rabi oscillations, relaxation and Ramsey fringe measurements. I was also able to see coupling between two Nb/AlOx/Nb dc SQUID phase qubits and perform Rabi oscillations with them. The Nb/AlOx/Nb devices had a relaxation time and coherence time that were half that of the Al/AlOx/Al device. One of the goals of this work was to understand the nature of parasitic quantum systems (TLSs) that interact with the qubit. Coupling between a TLS and a qubit causes an avoided level crossing in the transition spectrum of the qubit. In the Al/AlOx/Al devices unintentional avoided level crossings were visible with sizes up to 240 MHz, although most visible splittings were of order ~20 MHz. The measured spectra were compared to a model of the avoided level crossing based on the TLSs coupling to the junction, through either the critical current or the voltage across the junction.
Abstract Improving the coherence of superconducting qubits is a fundamental step towards the realization of fault-tolerant quantum computation. However, coherence times of quantum circuits made from conventional aluminum-based Josephson junctions are limited by the presence of microscopic two-level systems in the amorphous aluminum oxide tunnel barriers. Here, we have developed superconducting qubits based on NbN/AlN/NbN epitaxial Josephson junctions on silicon substrates which promise to overcome the drawbacks of qubits based on Al/AlOx/Al junctions. The all-nitride qubits have great advantages such as chemical stability against oxidation, resulting in fewer two-level fluctuators, feasibility for epitaxial tunnel barriers that reduce energy relaxation and dephasing, and a larger superconducting gap of ~5.2 meV for NbN, compared to ~0.3 meV for aluminum, which suppresses the excitation of quasiparticles. By replacing conventional MgO by a silicon substrate with a TiN buffer layer for epitaxial growth of nitride junctions, we demonstrate a qubit energy relaxation time $${T}_{1}=16.3\;{{\upmu }}{{{{{\rm{s}}}}}}$$ T 1 = 16.3 μ s and a spin-echo dephasing time $${T}_{2}=21.5\;{{\upmu }}{{{{{\rm{s}}}}}}$$ T 2 = 21.5 μ s . These significant improvements in quantum coherence are explained by the reduced dielectric loss compared to the previously reported $${T}_{1}\approx {T}_{2}\approx 0.5\;{{\upmu }}{{{{{\rm{s}}}}}}$$ T 1 ≈ T 2 ≈ 0.5 μ s of NbN-based qubits on MgO substrates. These results are an important step towards constructing a new platform for superconducting quantum hardware.
This thesis examines Josephson tunnel junctions as candidate qubits for quantum computation. A large area current-biased junction, known as a phase qubit, uses the two lowest energy levels in a tilted washboard potential as the qubit states |0> and |1>. I performed experiments with 10 x 10 um^2 Nb/AlOx/Nb qubit junctions, with critical currents of roughly 30 uA. The state of a device was initialized by cooling below 50 mK in a dilution refrigerator. In order for quantum mechanical superpositions to be long-lived, it is necessary to isolate the junction from noisy bias leads that originate at room temperature. I studied two types of isolation: an LC filter, and a broadband scheme that used an auxiliary junction, resulting in a dc SQUID. One of the main goals of this work was to determine how well a simple Hamiltonian, derived assuming just a few lumped elements, describes the observed behavior of a macroscopic Josephson device, including coherent dynamics such as Rabi oscillations. I did this by comparing results to the expected behavior of ideal two-level systems and with more detailed master equation and density matrix simulations. I performed state manipulation by applying dc bias currents and resonant microwave currents, and through temperature control. The tunneling escape rate of the junction from the states |0> and |1> (zero voltage) to the running state (finite voltage) depends on the occupation probability of the energy levels and served as state readout. Experiments to measure the relaxation time T1 between |1> and |0> were performed by examining the dependence of the escape rate with temperature, yielding a maximum T1 = 15 ns. Measuring the decay to the ground state after applying a microwave pulse revealed at least two time constants, one of about 10 ns and another as long as 50 ns. The spectroscopic coherence time T2* was estimated to be roughly 5 ns by measuring resonance widths and the decay envelope of coherent Rabi oscillations was found to have a time constant T' = 10 ns over a wide range of conditions.
Dielectric loss from two-level systems (TLSs) formed by local defects have shown a significant impact on the qubit coherence time. These defects can originate in the insulation material for superconducting wires isolation or in the Josephson junction tunnel barrier material. Due to the complexity of the qubit circuit fabrication process, identifying the contribution from each decoherence source is challenging. In an effort to address this issue, we have developed superconducting qubit that consists of full epitaxially-grown NbN/AlN/NbN Josephson junctions in NbN coplanar waveguide (CPW) resonator circuit. The dielectric loss introduced from TLFs in tunnel junction barrier has been largely reduced due to the unique epitaxial feature of the tunnel junction. The quality factor Qi of the CPW resonator was measured and the dielectric loss tanδ is 3×10−4. The relaxation time inferred from the measured resonator quality factor was comparable to the qubit relaxation time.
We demonstrate superconducting qubits using epitaxially grown Josephson junctions. A fully epitaxial NbN/AlN/NbN trilayer on MgO (100) substrate is processed by photolithography and dry-etching into transmon qubits with a large Josephson energy. The tunnel barrier made of cubic-phase AlN, rather than the ordinary hexagonal phase, is the key to avoid piezoelectric coupling to the phonon bath. The energy-relaxation time and the spin-echo decay time of ∼500 ns are observed in the qubits that are coupled to a monolithically made coplanar waveguide resonator.
We demonstrate superconducting qubits using epitaxially grown Josephson junctions. A fully epitaxial NbN/AlN/NbN trilayer on MgO (100) substrate is processed by photolithography and dry-etching into transmon qubits with a large Josephson energy. The tunnel barrier made of cubic-phase AlN, rather than the ordinary hexagonal phase, is the key to avoid piezoelectric coupling to the phonon bath. The energy-relaxation time and the spin-echo decay time of ∼500 ns are observed in the qubits that are coupled to a monolithically made coplanar waveguide resonator.