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Physical Chemistry Chemical Physics

Investigation of multi-bunching by generating multi-order fluorescence of NV center in diamond

Haijun Tang, Irfan Ahmed, Pargorn Puttapirat, Tianhao Wu, Yuwei Lan, Yanpeng Zhang, Enling Li

Published Jan 1, 2018• 10 citations
Publisher

Abstract

Fabricating electronics from solid-state quantum emitters is a promising strategy for the miniaturization and integration of electronic devices. However, the practical realization of solid-state quantum devices and circuits for signal transmission and processing at room temperature has remained challenging. Herein, we investigated the multi-bunching phenomenon by generating multi-order fluorescence from a pseudo-thermal source at room temperature using the nitrogen-vacancy (NV) center in diamond. We demonstrate the shift in time of multi-bunching by controlling the effect of dressing to realize logical gates and transistor switching operations. We also suggest the optimization of the time propagation delay (TPD) of the gate circuit by changing the boxcar gate position.

DOI
10.1039/c7cp08005k

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Fabricating electronics from solid-state quantum emitters is a promising strategy for the miniaturization and integration of electronic devices. However, the practical realization of solid-state quantum devices and circuits for signal transmission and processing at room temperature has remained challenging. Herein, we investigated the multi-bunching phenomenon by generating multi-order fluorescence from a pseudo-thermal source at room temperature using the nitrogen-vacancy (NV) center in diamond. We demonstrate the shift in time of multi-bunching by controlling the effect of dressing to realize logical gates and transistor switching operations. We also suggest the optimization of the time propagation delay (TPD) of the gate circuit by changing the boxcar gate position.
The determination of classical and quantum states through photon bunching and anti-bunching like phenomena may have potential applications in quantum information processing and long-distance quantum communications. We report the photon bunching and multi anti-bunching like phenomena by generating multi-order fluorescence and four-wave mixing (FWM) at room temperature using the Nitrogen-vacancy (NV) center in diamond. We have implied FWM process to demonstrate the interference pattern emerging from NV of nano-crystals in classical, nonclassical and intermediate (classical and nonclassical) regimes. Intersystem crossing is controlled by the fluence of incident beams. The interference pattern from dominant ionization of NV- to NVo and NVo to NV- suggests the bunching and anti-bunching like phenomena of photons, respectively.
We reported the second- and third-order temporal interference of two non-degenerate pseudo-thermal sources in a nitrogen-vacancy center (NV−). The relationship between the indistinguishability of source and path alternatives is analyzed at low temperature. In this article, we demonstrate the switching between three-mode bunching and frequency beating effect controlled by the time offset and the frequency difference to realize optical demultiplexer. Our experimental results suggest the advanced technique achieves channel spacing and speed of the demultiplexer of about 96% and 17 ns, respectively. The proposed demultiplexer model will have potential applications in quantum computing and communication.
Abstract We investigate the coexisting of two-mode and three-mode bunching in the intensity noise correlation by generating multi-order fluorescence from pseudo-thermal light source at low temperature using the Nitrogen-vacancy center in diamond. The coexisting mechanism suggests that three-mode bunching is overlapped with two-mode bunching via path indistinguishability, which can be further decomposed into multiple lower order correlation through path distinguishable offset. Moreover, the contribution from two-mode bunching in third order intensity noise correlation function is twice with respect to three-mode bunching. We demonstrate the interference among two- and three-mode bunching by controlling the time offset and dressing the slow light to realize multi-channel optical routing. Our experimental results suggest the advance technique of peak division and channel equalization ratio of about 95%, applicable to all multi-channel optical routing. The switching speed between two channels is about 20 ns.
The development of reliable devices to generate single photons is crucial for applications in quantum cryptography, as well as for fundamental quantum optics experiments. Due to their extremely high photostability at room temperature, optically active defects in solids, the so called color centers, are among the most promising candidates. Single NV (nitrogen-vacancy) centers in diamond have been demonstrated to be able to generate single photons and have already shown advantages compared to attenuated laser pulses in a quantum cryptography experiment. The nitrogen-vacancy center (NV center) in diamond consists of a substitutional nitrogen atom and an adjacent vacancy. This complex exhibits an optical transition with a fluorescence lifetime of 11.6 ns. The room temperature spectrum of the NV center consists of the zero-phonon line at 637 nm and broad phononic sidebands with a FWHM of more than 100 nm. Due to the existence of a shelving level the efficiency of the NV center as a single photon source is limited. Additionally, the high diffraction index of bulk diamond restricts the efficiency to collect the fluorescence light.
We report on a novel method to fabricate single, multiple and large-area high-density ensembles of nitrogen vacancy (NV) color centers in synthetic type Ib bulk diamond by femtosecond laser illumination. Electron beams generated in propagation of intense infrared laser pulses in air sputtered on a diamond sample under high temperature aroused by the laser illumination, creating NV color centers. Typical photoluminescence (PL) spectra of NV centers could be observed on the illuminated spots. Photon streams from individual photoluminescent points exhibited anti-bunching effect by the second-order correlation measurement, evidencing single and multiple photon-emitters around the laser illuminated spots.
Abstract The nitrogen-vacancy (NV) centre in diamond is a premier solid-state defect for quantum information processing and metrology. An integrated diamond quantum device harnesses the collective properties of multiple NV centres, enabling room-temperature quantum computing and sensing. While large-scale devices are poised to fill an important gap in the burgeoning quantum technology landscape, their practical realisation has not been achieved using current top-down fabrication techniques such as ion implantation. Consequently, this necessitates the development of a bottom-up fabrication technique, which is scalable, deterministic, and possesses atomic-scale precision. Informed by existing methods for fabricating phosphorous defect qubits in silicon, we envision a hydrogen depassivation lithography technique for atomically-precise manufacturing of nitrogen-vacancy centres in diamond. This perspective article outlines a viable multi-step procedure for realising scalable fabrication of diamond quantum devices and identifies the key challenges in its development.