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AIP Advances

Bunching and antibunching in four wave mixing NV center in diamond

Faizan Raza, Irfan Ahmed, Dan Zhang, Al Imran, Abubakkar Khan, Condon Lau, Yanpeng Zhang

Published Oct 1, 2018• 4 citations
Publisher

Abstract

The determination of classical and quantum states through photon bunching and anti-bunching like phenomena may have potential applications in quantum information processing and long-distance quantum communications. We report the photon bunching and multi anti-bunching like phenomena by generating multi-order fluorescence and four-wave mixing (FWM) at room temperature using the Nitrogen-vacancy (NV) center in diamond. We have implied FWM process to demonstrate the interference pattern emerging from NV of nano-crystals in classical, nonclassical and intermediate (classical and nonclassical) regimes. Intersystem crossing is controlled by the fluence of incident beams. The interference pattern from dominant ionization of NV- to NVo and NVo to NV- suggests the bunching and anti-bunching like phenomena of photons, respectively.

DOI
10.1063/1.5039979

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The determination of classical and quantum states through photon bunching and anti-bunching like phenomena may have potential applications in quantum information processing and long-distance quantum communications. We report the photon bunching and multi anti-bunching like phenomena by generating multi-order fluorescence and four-wave mixing (FWM) at room temperature using the Nitrogen-vacancy (NV) center in diamond. We have implied FWM process to demonstrate the interference pattern emerging from NV of nano-crystals in classical, nonclassical and intermediate (classical and nonclassical) regimes. Intersystem crossing is controlled by the fluence of incident beams. The interference pattern from dominant ionization of NV- to NVo and NVo to NV- suggests the bunching and anti-bunching like phenomena of photons, respectively.
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The development of material-processing techniques that can be used to generate optical diamond nanostructures containing a single-color center is an important problem in quantum science and technology. In this work, we present the combination of ion implantation and top-down diamond nanofabrication in two scenarios: diamond nanopillars and diamond nanowires. The first device consists of a 'shallow' implant (∼20 nm) to generate nitrogen-vacancy (NV) color centers near the top surface of the diamond crystal prior to device fabrication. Individual NV centers are then mechanically isolated by etching a regular array of nanopillars in the diamond surface. Photon anti-bunching measurements indicate that a high yield (>10%) of the devices contain a single NV center. The second device demonstrates 'deep' (∼1 μm) implantation of individual NV centers into diamond nanowires as a post-processing step. The high single-photon flux of the nanowire geometry, combined with the low background fluorescence of the ultrapure diamond, allowed us to observe sustained photon anti-bunching even at high pump powers.
We report the lifetime of spontaneous parametric four wave mixing (SP-FWM) and multiorder fluorescence in two-, three-, and four-level systems of negatively charged nitrogen vacancy (NV−) in diamond. The lifetime of SP-FWM is enhanced at high power by the induced dark state from coupling fields. The reduction and enhancement in fluorescence lifetime are attributed to destructive and constructive quantum interference, respectively. The quantum interference is induced by interaction among different decay pathways of spontaneous emission by closely spaced energy levels, which can be controlled by dipole–dipole interaction and the mutual orientations of dipole moments. The lifetime is observed to be longer in two-level as compared to three-level and four-level systems. The different measured lifetimes suggest the sensitivity of these NV systems to quantum interference and the dressing effect. These outcomes may provide new insights in development of all-optical communication devices and quantum storage on photonic chips.
We reported the second- and third-order temporal interference of two non-degenerate pseudo-thermal sources in a nitrogen-vacancy center (NV−). The relationship between the indistinguishability of source and path alternatives is analyzed at low temperature. In this article, we demonstrate the switching between three-mode bunching and frequency beating effect controlled by the time offset and the frequency difference to realize optical demultiplexer. Our experimental results suggest the advanced technique achieves channel spacing and speed of the demultiplexer of about 96% and 17 ns, respectively. The proposed demultiplexer model will have potential applications in quantum computing and communication.
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A study of the photophysical properties of nitrogen-vacancy (NV) color centers in diamond nanocrystals of size 50 nm or below is carried out by means of second-order time-intensity photon correlation and cross-correlation measurements as a function of the excitation power for both pure charge states, neutral and negatively charged, as well as for the photochromic state, where the center switches between both states at any power. A dedicated three-level model implying a shelving level is developed to extract the relevant photophysical parameters coupling all three levels. Our analysis confirms the very existence of the shelving level for the neutral NV center. It is found that it plays a negligible role on the photophysics of this center, whereas it is responsible for an increasing photon bunching behavior of the negative NV center with increasing power. From the photophysical parameters, we infer a quantum efficiency for both centers, showing that it remains close to unity for the neutral center over the entire power range, whereas it drops with increasing power from near unity to approximately 0.5 for the negative center. The photophysics of the photochromic center reveals a rich phenomenology that is to a large extent dominated by that of the negative state, in agreement with the excess charge release of the negative center being much slower than the photon emission process.