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The European Physical Journal B

Phonon-induced dissipation and decoherence in solid-state quantum devices: Markovian versus non-Markovian treatments

Rita Claudia Iotti, Fausto Rossi

Published Dec 1, 2017• 6 citations
Publisher
DOI
10.1140/epjb/e2017-80462-3

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The design and optimization of new-generation solid-state quantum hardware absolutely requires reliable dissipation versus decoherence models. Depending on the device operational condition, the latter may range from Markov-type schemes (both phenomenological- and microscopic- like) to quantum-kinetic approaches. The primary goal of this paper is to review in a cohesive way virtues versus limitations of the most popular approaches, focussing on a few critical issues recently pointed out (see, e.g., Phys. Rev. B 90, 125140 (2014); Eur. Phys. J. B 90, 250 (2017)) and linking them within a common framework. By means of properly designed simulated experiments of a prototypical quantum-dot nanostructure (described via a two-level electronic system coupled to a phonon bath), we shall show that both conventional (i.e., non-Lindblad) Markov models and density-matrix-based non-Markov approaches (i.e., quantum-kinetic treatments) may lead to significant positivity violations. While for the former case the problem is easily avoidable by choosing genuine Lindblad-type dissipation models, for the latter, a general strategy is still missing.
The electron-phonon interaction is one of the most fundamental mechanisms in condensed matter physics. Phonons can induce memory effects in solid-state platforms when localized electronic states interact with lattice vibrations in non-unitary dynamical maps. In this work, we demonstrate how single-mode and structured phonon environments can give rise to non-Markovian dynamics of an individual negatively charged silicon-vacancy center in diamond. Using trace distance as a quantifier via numerical simulations and theoretical calculations, we identify the physical conditions for emerging and understanding non-Markovian behavior in diverse scenarios. Most importantly, we investigate the influence of magnetic fields (longitudinal and transverse), phonon couplings, Fock states, and temperature to understand how these factors influence memory effects in this solid-state device.
The interaction of solid-state qubits with environmental degrees of freedom strongly affects the qubit dynamics, and leads to decoherence. In quantum information processing with solid-state qubits, decoherence significantly limits the performances of such devices. Therefore, it is necessary to fully understand the mechanisms that lead to decoherence. In this review, we discuss how decoherence affects two of the most successful realizations of solid-state qubits, namely, spin qubits and superconducting qubits. In the former, the qubit is encoded in the spin 1/2 of the electron, and it is implemented by confining the electron spin in a semiconductor quantum dot. Superconducting devices show quantum behaviour at low temperatures, and the qubit is encoded in the two lowest energy levels of a superconducting circuit. The electron spin in a quantum dot has two main decoherence channels, a (Markovian) phonon-assisted relaxation channel, due to the presence of a spin–orbit interaction, and a (non-Markovian) spin bath constituted by the spins of the nuclei in the quantum dot that interact with the electron spin via the hyperfine interaction. In a superconducting qubit, decoherence takes place as a result of fluctuations in the control parameters, such as bias currents, applied flux and bias voltages, and via losses in the dissipative circuit elements.