The interaction of solid-state qubits with environmental degrees of freedom strongly affects the qubit dynamics, and leads to decoherence. In quantum information processing with solid-state qubits, decoherence significantly limits the performances of such devices. Therefore, it is necessary to fully understand the mechanisms that lead to decoherence. In this review, we discuss how decoherence affects two of the most successful realizations of solid-state qubits, namely, spin qubits and superconducting qubits. In the former, the qubit is encoded in the spin 1/2 of the electron, and it is implemented by confining the electron spin in a semiconductor quantum dot. Superconducting devices show quantum behaviour at low temperatures, and the qubit is encoded in the two lowest energy levels of a superconducting circuit. The electron spin in a quantum dot has two main decoherence channels, a (Markovian) phonon-assisted relaxation channel, due to the presence of a spin–orbit interaction, and a (non-Markovian) spin bath constituted by the spins of the nuclei in the quantum dot that interact with the electron spin via the hyperfine interaction. In a superconducting qubit, decoherence takes place as a result of fluctuations in the control parameters, such as bias currents, applied flux and bias voltages, and via losses in the dissipative circuit elements.
The interaction of solid-state qubits with environmental degrees of freedom strongly affects the qubit dynamics, and leads to decoherence. In quantum information processing with solid-state qubits, decoherence significantly limits the performances of such devices. Therefore, it is necessary to fully understand the mechanisms that lead to decoherence. In this review, we discuss how decoherence affects two of the most successful realizations of solid-state qubits, namely, spin qubits and superconducting qubits. In the former, the qubit is encoded in the spin 1/2 of the electron, and it is implemented by confining the electron spin in a semiconductor quantum dot. Superconducting devices show quantum behaviour at low temperatures, and the qubit is encoded in the two lowest energy levels of a superconducting circuit. The electron spin in a quantum dot has two main decoherence channels, a (Markovian) phonon-assisted relaxation channel, due to the presence of a spin–orbit interaction, and a (non-Markovian) spin bath constituted by the spins of the nuclei in the quantum dot that interact with the electron spin via the hyperfine interaction. In a superconducting qubit, decoherence takes place as a result of fluctuations in the control parameters, such as bias currents, applied flux and bias voltages, and via losses in the dissipative circuit elements.
Solid state based quantum information processing is focused on physical implementation of all necessary elements of quantum computation and quantum information in solid state systems, mainly due to their scalability compared to e.g. optical systems. Among many proposals to realize these types of devices, such as quantum dots as charge qubits or Josephson junction circuits, we study here one of the most promising candidates, i.e., the spin of an electron confined to a quantum dot as a qubit. Experimentally, it has been shown that the relaxation rate of this two level system can be pushed above few seconds in low magnetic fields. Moreover, using spin echo techniques, \nthe spin dephasing time can be maximized up to milliseconds with the current technology. This long spin decay time is one of the main reasons that make this system desirable for quantum computation and quantum information purposes. \nWe reexamined the recent measurement based proposal called one-way quantum computation which exploits entanglement and local measurements as tools to perform quantum computation on N qubits. Although it was suggested in the original work to entangle the qubits via the nearest neighbor Ising interaction, we investigated how one can generate the so-called cluster states with the Heisenberg interaction. We extended our method to include more general forms of Heisenberg interaction such as asymmetric coupling of adjacent qubits. These forms of couplings, rather than Ising interaction, are more encountered in solid state devices, and therefore make it possible to perform one-way quantum computation with electron spins in quantum dots coupled via exchange interaction to their adjacent spins. \n \nChapters II, III, and IV of my thesis are devoted to the study of the spin-orbit interaction in heterostructure quantum dots and its effect on the spin dynamics. We observed that one can actually use spin-orbit interaction to manipulate the spin state of an electron on time scales much smaller than the spin dephasing time. Specifically, in chapter II, we studied the effect of a nearby functioning quantum point contact (QPC) on the relaxation of the electron spin and show that the charge fluctuations in QPC lead to spin relaxation of the confined electron in the presence of spin-orbit interactiom and an applied magnetic field. We also addressed the relation of this rate to the microscopic parameters of the system and found some geometrical dependence of the spin relaxation time on the orientation of the QPC on the substrate. Moreover, we showed in chapters III and IV that the spin-orbit interaction can play a positive role, in order to rotate the spin around the Bloch sphere. We considered different mechanisms, particularly, Electron Dipole Spin Resonance (EDSR) and holonomic unitary gates in quantum dots. We verified that these mechanisms of spin manipulation can be realized in solid state systems with the state of the art semiconductor technologies. \n \nChapter V of the thesis covers a slightly different topic and focuses on the role of the Coulomb interaction in electronic transport. There, we reviewed the non-analytic corrections to the Fermi liquid behavior and their consequences on the momentum occupation number of the electrons in a two dimensional electron gas (2DEG). As an example, we calculated the tunneling rate from an interacting electron reservoir onto a quantum dot and compared our result to the corresponding case for electron tunneling between bilayer 2DEGs. Moreover, within RPA approximation, we found that the electron-plasmon coupling leads to a quadratic frequency dependence of the electron self-energy at low frequencies at the Fermi surface. This correction suppresses the same order corrections due to the particle-hole bubble. \n \n \n
Superconducting integrated circuits incorporating Josephson junctions are an attractive candidate for scalable quantum information processing in the solid state. The strong nonlinearity of the Josephson effect enables one to tailor an anharmonic potential and thus to realize an artificial quantum two-level system (“qubit”) from a macroscopic superconducting circuit. Josephson qubits can be made to interact strongly and controllably, and it should be straightforward to fabricate circuits incorporating hundreds or even thousands of Josephson qubits using standard thin-film processing techniques. Work over the last several years has shown that qubit performance is limited by spurious coupling of the qubit to microscopic defect states in the materials that are used to implement the circuit. Here we discuss the materials origins of dissipation and dephasing in superconducting qubits. A deeper understanding of the underlying materials physics that governs decoherence in superconducting quantum circuits will guide the search for improved, low-noise materials and fuel continued progress in the field of superconducting quantum computing.
Since the development of microsized devices is moving forward at enormous speed, there is huge amount of new industrial opportunities. However such devices also require high precision and understanding of the operating of their constituent parts up to the quantum level. The device of the purely quantum nature being developed so far is quantum computer. However the physical realization of it is still not performed, as the requirements for it are very rigorous. \n \nIn the pioneering work by Loss and DiVincenzo it was suggested to use a spin of electron placed in a quantum dot as an information qubit. Following this work the study of electron or hole spin qubits developed. Both experimental and theoretical tools for studying them greatly advanced. \n \nIn the first part of the thesis we study the phonon-induced decoherence and relaxation of singlet-triplet qubits in the double quantum dots. First of all we consider AlGaAs/GaAs double quantum dots. The important result we present here is the strong dephasing that occurs at large detuning. This dephasing is due to two-phonon process that affects mainly singlet state of the qubit and consequently changes the splitting between singlet and triplet leading to dephasing. Remarkably at small detuning this dephasing process is suppressed and the decoherence time is by orders of magnitude longer than in case of large detuning and is mainly defined by one-phonon process. We also present the dependence of relaxation time and decoherence time on the strength of spin-orbit interaction and different directions of the system. Our results provide a deeper insight into the recently obtained experimental data. \n \nWe also studied Si/SiGe quantum dots as a potential candidate for a qubit. Apart from the absence of hyperfine interaction and bulk spin-orbit interaction in the isotopically purified 28Si, its electron-phonon interaction is different from GaAs that also leads to longer qubit lifetimes. We study S-T− qubit near the anticrossing of the basis states. This particular region is interesting due to possibilities in operating the qubit. We show that the type of singlet plays a crucial role, i.e. whether it is a singlet with each dot singly occupied or a singlet with only one dot doubly occupied. Depending on the type of singlet the qubit lifetimes change by several orders of magnitude. We also study the influence of a micromagnet, usually used in experiments to operate the qubit, on the relaxation time and decoherence time and present the regime where its effect is negligible. We suggest how to test experimentally our theory of one-phonon and two-phonon processes separately. We also show how the relaxation and decoherence time depend on different system parameters for S-T0 qubits. \n \nThe second part of the thesis is devoted to the other important constituent part of microsized devices, namely nanowires. We are interested in the dynamic of polarization of localized spins in the nanowires, as it can affect such important device characteristics as e.g. conductance. \n \nWe studied Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction-induced polarization in the nanowire in case when the voltage is applied to it. It was already proposed theoretically that in the ground state the localized spins in 1D systems align in a helix due to RKKY interaction. This polarization is still present until some critical temperature. The presence of such polarization acts as a spin filter for electrons, that most likely affects the conductance of the nanowire. Therefore we studied how this helical polarization changes when the voltage is applied. The key result is the appearance of the uniform polarization perpendicular to the helix plane, that occurs due to backscattering of electrons that is accompanied by flip-flop process with localized spins. When this uniform polarization is formed, the helix starts to rotate as a whole around the direction of the uniform polarization. We present the dependence of polarization of the localized spins on temperature and voltage. Remarkably the uniform polarization grows both with voltage and temperature in the given range of parameters. \n \nWe also considered the electron-induced relaxation of the nuclear spins. As the electron spins and nuclear spins interact via hyperfine interaction, the nuclear relaxation time reflects some properties of electron bath. Namely, we see a strong dependence of nuclear relaxation time on spin-orbit interaction strength. We present here the dependence of the nuclear relaxation time on the external magnetic field and chemical potential of the wire, that can be experimentally varied via gate. The dependences for the strong spin-orbit interaction and for the weak one are substantially different. Moreover, they have distinct peaks, that allow to get the value of spin-orbit interaction amplitude with the high precision.
The efficiency of the future devices for quantum information processing is limited mostly by the finite decoherence rates of the individual qubits and quantum gates. Recently, substantial progress was achieved in enhancing the time within which a solid-state qubit demonstrates coherent dynamics. This progress is based mostly on a successful isolation of the qubits from external decoherence sources obtained by engineering. Under these conditions, the material-inherent sources of noise start to play a crucial role. In most cases, quantum devices are affected by noise decreasing with frequency f approximately as 1/f. According to the present point of view, such noise is due to material- and device-specific microscopic degrees of freedom interacting with quantum variables of the nanodevice. The simplest picture is that the environment that destroys the phase coherence of the device can be thought of as a system of two-state fluctuators, which experience random hops between their states. If the hopping times are distributed in an exponentially broad domain, the resulting fluctuations have a spectrum close to 1/f in a large frequency range. This paper reviews the current state of the theory of decoherence due to degrees of freedom producing 1/f noise. Basic mechanisms of such noises in various nanodevices are discussed and several models describing the interaction of the noise sources with quantum devices are reviewed. The main focus of the review is to analyze how the 1/f noise destroys their coherent operation. The start is from individual qubits concentrating mostly on the devices based on superconductor circuits and then some special issues related to more complicated architectures are discussed. Finally, several strategies for minimizing the noise-induced decoherence are considered.
In this dissertation we discuss decoherence in charge qubits formed by multiple lateral quantum dots in the framework of the spin-boson model and the Born-Markov approximation. We consider the intrinsic decoherence caused by the coupling to bulk phonon modes and electromagnetic environmental fluctuations. In the case of decoherence caused by phonon coupling, two distinct quantum dot configurations are studied and proposed as setups that mitigate its nocive effects : (i) Three quantum dots in a ring geometry with one excess electron in total and (ii) arrays of quantum dots where the computational basis states form multipole charge configurations. For the three-dot qubit, we demonstrate the possibility of performing one- and two-qubit operations by solely tuning gate voltages. Compared to a previous proposal involving a linear three-dot spin qubit, the three-dot charge qubit allows for less overhead on two-qubit operations. For small interdot tunnel amplitudes, the three-dot qubits have Q factors much higher than those obtained for double-dot systems. The high-multipole dot configurations also show a substantial decrease in decoherence at low operation frequencies when compared to the double-dot qubit. We also discuss decoherence due to electromagnetic fluctuations in charge qubits formed by two lateral quantum dots. We use effective circuit models to evaluate correlations of voltage fluctuations in the qubit setup. These correlations allows us to estimate energy (T1) and phase (T2) relaxation times of the the qubit system. We also discuss the dependence the quality factor Q shows with respect to parameters of the setup, such as temperature and capacitive coupling between the electrodes.
Solid-state systems, by their very nature, have a vast number of different possible quantum degrees of freedom. In Chapter 11, we saw that some of these degrees of freedom make good qubits. However, there are plenty more which are less suitable, since they cannot easily be localized and externally controlled. Once the qubit has been chosen, it is important to think about how it interacts with the other, uncontrolled quantum excitations in its environment. Such an interaction leads to unpredictable behaviour and can cause decoherence – the irretrievable loss of quantum information from the qubit – and this will be the topic of this chapter. The most obvious decoherence mechanism for any optical manipulation scheme is the spontaneous emission of photons. The theory behind this follows analogously from the theory we discussed in Chapter 7, with a suitable definition of a transition dipole for the relevant transitions. However, solid-state systems bring with them lattice vibrations, or phonons, which have no direct atomic analogue. We will therefore focus on phonons in this chapter, first discussing how we model them, and second how they interact with the electron-based qubit that we discussed in the last chapter. Later, we will see how this leads to a loss of coherence, and how optical methods can be used to slow the rate of coherence loss. Phonon interactions are complex and not easy to model exactly, but we will show that with certain approximations very successful theories can be developed.