Since the development of microsized devices is moving forward at enormous speed, there is huge amount of new industrial opportunities. However such devices also require high precision and understanding of the operating of their constituent parts up to the quantum level. The device of the purely quantum nature being developed so far is quantum computer. However the physical realization of it is still not performed, as the requirements for it are very rigorous. \n \nIn the pioneering work by Loss and DiVincenzo it was suggested to use a spin of electron placed in a quantum dot as an information qubit. Following this work the study of electron or hole spin qubits developed. Both experimental and theoretical tools for studying them greatly advanced. \n \nIn the first part of the thesis we study the phonon-induced decoherence and relaxation of singlet-triplet qubits in the double quantum dots. First of all we consider AlGaAs/GaAs double quantum dots. The important result we present here is the strong dephasing that occurs at large detuning. This dephasing is due to two-phonon process that affects mainly singlet state of the qubit and consequently changes the splitting between singlet and triplet leading to dephasing. Remarkably at small detuning this dephasing process is suppressed and the decoherence time is by orders of magnitude longer than in case of large detuning and is mainly defined by one-phonon process. We also present the dependence of relaxation time and decoherence time on the strength of spin-orbit interaction and different directions of the system. Our results provide a deeper insight into the recently obtained experimental data. \n \nWe also studied Si/SiGe quantum dots as a potential candidate for a qubit. Apart from the absence of hyperfine interaction and bulk spin-orbit interaction in the isotopically purified $^{28}$Si, its electron-phonon interaction is different from GaAs that also leads to longer qubit lifetimes. We study $S$-$T_-$ qubit near the anticrossing of the basis states. This particular region is interesting due to possibilities in operating the qubit. We show that the type of singlet plays a crucial role, i.e. whether it is a singlet with each dot singly occupied or a singlet with only one dot doubly occupied. Depending on the type of singlet the qubit lifetimes change by several orders of magnitude. We also study the influence of a micromagnet, usually used in experiments to operate the qubit, on the relaxation time and decoherence time and present the regime where its effect is negligible. We suggest how to test experimentally our theory of one-phonon and two-phonon processes separately. We also show how the relaxation and decoherence time depend on different system parameters for $S$-$T_0$ qubits. \n \nThe second part of the thesis is devoted to the other important constituent part of microsized devices, namely nanowires. We are interested in the dynamic of polarization of localized spins in the nanowires, as it can affect such important device characteristics as e.g. conductance. \n \nWe studied Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction-induced polarization in the nanowire in case when the voltage is applied to it. It was already proposed theoretically that in the ground state the localized spins in 1D systems align in a helix due to RKKY interaction. This polarization is still present until some critical temperature. The presence of such polarization acts as a spin filter for electrons, that most likely affects the conductance of the nanowire. Therefore we studied how this helical polarization changes when the voltage is applied. The key result is the appearance of the uniform polarization perpendicular to the helix plane, that occurs due to backscattering of electrons that is accompanied by flip-flop process with localized spins. When this uniform polarization is formed, the helix starts to rotate as a whole around the direction of the uniform polarization. We present the dependence of polarization of the localized spins on temperature and voltage. Remarkably the uniform polarization grows both with voltage and temperature in the given range of parameters. \n \nWe also considered the electron-induced relaxation of the nuclear spins. As the electron spins and nuclear spins interact via hyperfine interaction, the nuclear relaxation time reflects some properties of electron bath. Namely, we see a strong dependence of nuclear relaxation time on spin-orbit interaction strength. We present here the dependence of the nuclear relaxation time on the external magnetic field and chemical potential of the wire, that can be experimentally varied via gate. The dependences for the strong spin-orbit interaction and for the weak one are substantially different. Moreover, they have distinct peaks, that allow to get the value of spin-orbit interaction amplitude with the high precision.
Since the development of microsized devices is moving forward at enormous speed, there is huge amount of new industrial opportunities. However such devices also require high precision and understanding of the operating of their constituent parts up to the quantum level. The device of the purely quantum nature being developed so far is quantum computer. However the physical realization of it is still not performed, as the requirements for it are very rigorous. \n \nIn the pioneering work by Loss and DiVincenzo it was suggested to use a spin of electron placed in a quantum dot as an information qubit. Following this work the study of electron or hole spin qubits developed. Both experimental and theoretical tools for studying them greatly advanced. \n \nIn the first part of the thesis we study the phonon-induced decoherence and relaxation of singlet-triplet qubits in the double quantum dots. First of all we consider AlGaAs/GaAs double quantum dots. The important result we present here is the strong dephasing that occurs at large detuning. This dephasing is due to two-phonon process that affects mainly singlet state of the qubit and consequently changes the splitting between singlet and triplet leading to dephasing. Remarkably at small detuning this dephasing process is suppressed and the decoherence time is by orders of magnitude longer than in case of large detuning and is mainly defined by one-phonon process. We also present the dependence of relaxation time and decoherence time on the strength of spin-orbit interaction and different directions of the system. Our results provide a deeper insight into the recently obtained experimental data. \n \nWe also studied Si/SiGe quantum dots as a potential candidate for a qubit. Apart from the absence of hyperfine interaction and bulk spin-orbit interaction in the isotopically purified 28Si, its electron-phonon interaction is different from GaAs that also leads to longer qubit lifetimes. We study S-T− qubit near the anticrossing of the basis states. This particular region is interesting due to possibilities in operating the qubit. We show that the type of singlet plays a crucial role, i.e. whether it is a singlet with each dot singly occupied or a singlet with only one dot doubly occupied. Depending on the type of singlet the qubit lifetimes change by several orders of magnitude. We also study the influence of a micromagnet, usually used in experiments to operate the qubit, on the relaxation time and decoherence time and present the regime where its effect is negligible. We suggest how to test experimentally our theory of one-phonon and two-phonon processes separately. We also show how the relaxation and decoherence time depend on different system parameters for S-T0 qubits. \n \nThe second part of the thesis is devoted to the other important constituent part of microsized devices, namely nanowires. We are interested in the dynamic of polarization of localized spins in the nanowires, as it can affect such important device characteristics as e.g. conductance. \n \nWe studied Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction-induced polarization in the nanowire in case when the voltage is applied to it. It was already proposed theoretically that in the ground state the localized spins in 1D systems align in a helix due to RKKY interaction. This polarization is still present until some critical temperature. The presence of such polarization acts as a spin filter for electrons, that most likely affects the conductance of the nanowire. Therefore we studied how this helical polarization changes when the voltage is applied. The key result is the appearance of the uniform polarization perpendicular to the helix plane, that occurs due to backscattering of electrons that is accompanied by flip-flop process with localized spins. When this uniform polarization is formed, the helix starts to rotate as a whole around the direction of the uniform polarization. We present the dependence of polarization of the localized spins on temperature and voltage. Remarkably the uniform polarization grows both with voltage and temperature in the given range of parameters. \n \nWe also considered the electron-induced relaxation of the nuclear spins. As the electron spins and nuclear spins interact via hyperfine interaction, the nuclear relaxation time reflects some properties of electron bath. Namely, we see a strong dependence of nuclear relaxation time on spin-orbit interaction strength. We present here the dependence of the nuclear relaxation time on the external magnetic field and chemical potential of the wire, that can be experimentally varied via gate. The dependences for the strong spin-orbit interaction and for the weak one are substantially different. Moreover, they have distinct peaks, that allow to get the value of spin-orbit interaction amplitude with the high precision.
We study theoretically the phonon-induced relaxation and decoherence of spin states of two electrons in a lateral double quantum dot in a SiGe/Si/SiGe heterostructure. We consider two types of singlet-triplet spin qubits and calculate their relaxation and decoherence times, in particular as a function of level hybridization, temperature, magnetic field, spin orbit interaction, and detuning between the quantum dots, using Bloch-Redfield theory. We show that the magnetic field gradient, which is usually applied to operate the spin qubit, may reduce the relaxation time by more than an order of magnitude. Using this insight, we identify an optimal regime where the magnetic field gradient does not affect the relaxation time significantly, and we propose regimes of longest decay times. We take into account the effects of one-phonon and two-phonon processes and suggest how our theory can be tested experimentally. The spin lifetimes we find here for Si-based quantum dots are significantly longer than the ones reported for their GaAs counterparts.
We study theoretically the phonon-induced relaxation (T1) and decoherence times (T2) of singlet-triplet qubits in lateral GaAs double quantum dots (DQDs). When the DQD is biased, Pauli exclusion enables strong dephasing via two-phonon processes. This mechanism requires neither hyperfine nor spin-orbit interaction and yields ${T}_{2}\ensuremath{\ll}{T}_{1}$, in contrast to previous calculations of phonon-limited lifetimes. When the DQD is unbiased, we find ${T}_{2}\ensuremath{\simeq}2{T}_{1}$ and much longer lifetimes than in the biased DQD. For typical setups, the decoherence and relaxation rates due to one-phonon processes are proportional to the temperature T, whereas the rates due to two-phonon processes reveal a transition from T2 to higher powers as T is decreased. Remarkably, both T1 and T2 exhibit a maximum when the external magnetic field is applied along a certain axis within the plane of the two-dimensional electron gas. We compare our results with recent experiments and analyze the dependence of T1 and T2 on system properties such as the detuning, the spin-orbit parameters, the hyperfine coupling, and the orientation of the DQD and the applied magnetic field with respect to the main crystallographic axes.
Solid state based quantum information processing is focused on physical implementation of all necessary elements of quantum computation and quantum information in solid state systems, mainly due to their scalability compared to e.g. optical systems. Among many proposals to realize these types of devices, such as quantum dots as charge qubits or Josephson junction circuits, we study here one of the most promising candidates, i.e., the spin of an electron confined to a quantum dot as a qubit. Experimentally, it has been shown that the relaxation rate of this two level system can be pushed above few seconds in low magnetic fields. Moreover, using spin echo techniques, \nthe spin dephasing time can be maximized up to milliseconds with the current technology. This long spin decay time is one of the main reasons that make this system desirable for quantum computation and quantum information purposes. \nWe reexamined the recent measurement based proposal called one-way quantum computation which exploits entanglement and local measurements as tools to perform quantum computation on N qubits. Although it was suggested in the original work to entangle the qubits via the nearest neighbor Ising interaction, we investigated how one can generate the so-called cluster states with the Heisenberg interaction. We extended our method to include more general forms of Heisenberg interaction such as asymmetric coupling of adjacent qubits. These forms of couplings, rather than Ising interaction, are more encountered in solid state devices, and therefore make it possible to perform one-way quantum computation with electron spins in quantum dots coupled via exchange interaction to their adjacent spins. \n \nChapters II, III, and IV of my thesis are devoted to the study of the spin-orbit interaction in heterostructure quantum dots and its effect on the spin dynamics. We observed that one can actually use spin-orbit interaction to manipulate the spin state of an electron on time scales much smaller than the spin dephasing time. Specifically, in chapter II, we studied the effect of a nearby functioning quantum point contact (QPC) on the relaxation of the electron spin and show that the charge fluctuations in QPC lead to spin relaxation of the confined electron in the presence of spin-orbit interactiom and an applied magnetic field. We also addressed the relation of this rate to the microscopic parameters of the system and found some geometrical dependence of the spin relaxation time on the orientation of the QPC on the substrate. Moreover, we showed in chapters III and IV that the spin-orbit interaction can play a positive role, in order to rotate the spin around the Bloch sphere. We considered different mechanisms, particularly, Electron Dipole Spin Resonance (EDSR) and holonomic unitary gates in quantum dots. We verified that these mechanisms of spin manipulation can be realized in solid state systems with the state of the art semiconductor technologies. \n \nChapter V of the thesis covers a slightly different topic and focuses on the role of the Coulomb interaction in electronic transport. There, we reviewed the non-analytic corrections to the Fermi liquid behavior and their consequences on the momentum occupation number of the electrons in a two dimensional electron gas (2DEG). As an example, we calculated the tunneling rate from an interacting electron reservoir onto a quantum dot and compared our result to the corresponding case for electron tunneling between bilayer 2DEGs. Moreover, within RPA approximation, we found that the electron-plasmon coupling leads to a quadratic frequency dependence of the electron self-energy at low frequencies at the Fermi surface. This correction suppresses the same order corrections due to the particle-hole bubble. \n \n \n
The computer industry has seen an immense development in the last decades. \nPersonal computers have become available for everybody living in industrialized \ncountries with rapidly increasing performance in terms of speed and storage capacities. \nHowever, the performance of nowadays' computers is fundamentally limited by the \nlaws of classical physics: a classical bit can only take on either of the two distinct \nvalues `0' or `1'. \nIn contrast, a quantum computer could, in principle, make direct use \nof quantum phenomena, such as state superpositions \n-- a quantum bit can be in both states `0' and `1' simultaneously --, \nto perform complex computational tasks much faster than any classical computer. \n \nThe idea of building computers that work according to the laws of quantum physics \nhas opened various fields of research, one of which is the search for the best \nphysical system to use as a quantum bit (qubit). One important criterion for determining \nthe optimal qubit system is the lifetime of state superpositions. \nTypically, once initialized, such superpositions are destroyed on remarkably short \ntimescales due to interactions with the environment -- a process which is referred to \nas decoherence --, posing the question which physical qubit candidate system might show a high-enough robustness against the \ninfluence of the `outside world' to allow for viable quantum computation. \n \nIn this thesis, we will consider three particular realizations of one specific and \nvery promising type of qubit candidate system: \nan electron (or hole) confined to a quantum dot -- a nanoscale structure \nwithin a (typically semiconducting) material --, where the spin states `down' \nand `up' of our electron (or hole) encode the logical states `0' and `1'. \nOur task will be to study the decay of spin-state superpositions in such quantum-dot \nsystems. The main objective of this thesis is to understand the most important physical \nprocesses that lead to spin decoherence and to show ways to suppress this undesirable effect. \nIt turns out that at low temperatures, the main source of decoherence \nis the coupling of the electron (hole) to the surrounding nuclear spins. \n \nThis thesis is divided into three logical parts, corresponding to the three qubit candidate \nsystems under consideration. First we will study electron-spin qubits in III-V semiconductor \nquantum dots, where the electron spin interacts with the nuclear spins of the semiconducting \nhost material \nvia the isotropic Fermi contact hyperfine interaction. Second we consider quantum-dot-confined \nheavy holes and the decoherence of their (pseudo-)spin states due to anisotropic interactions with the \nnuclear spins. Third and last, we study electron-spin qubits made from carbon-nanotube and \ngraphene quantum dots. Quantum dots made of carbon have the advantage of a low abundance \nof spin-carrying nuclear isotopes, therefore reducing decoherence effects significantly. \n \nFor each of the systems under consideration, we will carry out analytical calculations on \nthe nuclear-spin interactions and the spin dynamics of the qubit. Although one main goal of \nthis thesis is to show ways to extend spin decoherence times, we will also focus on physically more \nfundamental questions. Not only the timescale of the decay is relevant for \nthe system's applicability as a qubit, but also the form of the decay which can vary \nsignificantly from system to system. For example, the decay of spin-state superpositions \ncan follow an exponential, super-exponential or power-law decay, and can even pass through \nvarious stages. This is not only of academic interest, but also important for practical \npurposes, such as the implementation of quantum error-correction schemes in a potential \nquantum computer. \n
We study electron-phonon interaction induced decoherence between two-electron singlet and triplet states in a semiconductor double quantum dot using a spin-boson model. We investigate the onset and time evolution of this dephasing, and study its dependence on quantum dot parameters such as dot size and double dot separations, as well as the host materials (GaAs and Si). At the short time limit, electron-phonon interaction only causes an incomplete initial Gaussian decay of the off-diagonal density matrix element in the singlet-triplet Hilbert space; a complete long-time exponential decay due to phonon relaxation would eventually dominate over two-spin decoherence. We analyze two-spin decoherence in both symmetric and biased double quantum dots, identifying their difference in electron-phonon coupling and the relevant consequences.
We study theoretically the phonon-induced relaxation and decoherence processes in the hybrid qubit in silicon. A hybrid qubit behaves as a charge qubit when the detuning is close to zero and as a spin qubit for large detuning values. It is realized starting from an electrostatically defined double quantum dot where three electrons are confined and manipulated through only electrical tuning. By employing a three-level effective model for the qubit and describing the environment bath as a series of harmonic oscillators in the thermal equilibrium states, we extract the relaxation and decoherence times as a function of the bath spectral density and of the bath temperature using the Bloch-Redfield theory. For Si quantum dots the energy dispersion is strongly affected by the physics of the valley, i.e., the conduction band minima, so we also included the contribution of the valley excitations in our analysis. Our results offer fundamental information on the system decoherence properties when the unavoidable interaction with the environment is included and temperature effects are considered.