Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC)

Slow light via tunneling induced transparency in quantum well heterostructures

Bernhard Glauber, Petar Tzenov, Christian Jirauschek

Published Jun 1, 2017• 0 citations
Publisher

Abstract

We investigate the possibility of slowing down terahertz light via intersubband transitions in quantum well heterostructures. The slow-down effect is achieved via tunneling induced transparency in a three level Λ-system by careful engineering of the wave functions. The inherently short coherence times in such solid state media inevitably leads to strong absorption of the signal, which we propose to compensate for by incorporating a quantum cascade amplifier (QCA) into the system.

DOI
10.1109/cleoe-eqec.2017.8086569

Related papers

Dispersive properties of tunnelling-induced transparency in an asymmetric double quantum well

Su Xue-Mei, Zhuo Zhong-chang, Wang Li-jun +1 more

We have investigated the dispersive properties of tunnelling-induced transparency in asymmetric double quantum well structures where two excited states are coupled by resonant tunnelling through a thin barrier in a three-level system of electronic subbands. The intersubband transitions exhibit high dispersion at zero absorption, which leads to the slow light velocity in this medium as compared with that in vacuum ( c =3×10 8 ). The group velocity in a specific GaAs/AlGaAs sample is calculated to be v g = c /4.30. This structure can be used to compensate for the dispersion and energy loss in fibre optical communications.

Chinese Physics•Oct 23, 2002•8 citations

Dispersive properties of tunnelling-induced transparency in an asymmetric double quantum well

苏雪梅, 卓仲畅, 王立军 +1 more

We have investigated the dispersive properties of tunnelling-induced transparency in asymmetric double quantum well structures where two excited states are coupled by resonant tunnelling through a thin barrier in a three-level system of electronic subbands,The intersubband transitions exhibit high disperision at zero absorption,which leads to the slow light velocity in this medium as compared with that in vacuum(c=3×10^8).The group velocity in a specific GaAs/AlGaAs sample is calculated to be ug=c/4.30,This structure can be used to compensate for the dispersion and energy loss in fibre optical communications.

中国物理B：英文版•Jun 12, 2005•0 citations

Tunneling induced transparency: Fano interference in intersubband transitions

Holger Schmidt, K. L. Campman, Arthur C. Gossard +1 more

We report the observation of tunneling induced transparency in asymmetric double quantum well structures. Resonant tunneling through a thin barrier is used to coherently couple the two upper states in a three level system of electronic subbands in a GaAs/AlGaAs structure. This creates Fano-type interferences for the collective intersubband excitations in the absorption from the ground state, analogous to electromagnetically induced transparency (EIT) in atomic systems. We observe a 50% reduction in absorption between the subband resonances which can be explained by taking into account the coherent coupling of the upper states. We analyze the bias dependent absorption spectra and determine the relevant lifetime broadening and dephasing rates for the transitions.

Applied Physics Letters•Jun 23, 1997•253 citations

Slow Light Using P-Doped Semiconductor Heterostructures for High-Bandwidth Nonlinear Signal Processing

Dong Sun, C. C. Kuo

We propose a novel scheme for slow light based on a resonant three-level lambda system (RTLS) in a p-doped semiconductor heterostructure. Numerical simulations show that a slow-down factor of 145 and a slow-down-bandwidth product exceeding 200 THz can be achieved in semiconductor quantum wells at room temperature. These figures of merit make the RTLS slow light especially useful for the enhancement of the optical nonlinearity in high bandwidth all-optical signal processing applications.

Journal of Lightwave Technology•Dec 1, 2008•13 citations

Suppression of absorption by quantum interference in intersubband transitions of tunnel-coupled double quantum wells

Wen-Xing Yang, Xu, Jin, Ray‐Kuang Lee

We propose and analyze an efficient scheme for suppressing the absorption of a weak probe field based on intersubband transitions in a four-level asymmetric coupled-quantum well (CQW) driven coherently by a probe laser field and a control laser field. By using the numerical simulation, we find that the magnitude of the transient absorption of the probe field is smaller than the three-level system based on the electromagnetically induced transparency (EIT) at line center of the probe transition, moreover, comparing with the scheme in three-level asymmetric double QW system, the transparency hole of the present work is much broader. By analyzing the steady-state process analytically and numerically, our results show that the probe absorption can be completely eliminated under the condition of Raman resonance (i.e. two-photon detuning is zero). Besides, we can observe one transparency window without requiring one- or two-photon detuning exactly vanish. This investigation may provide the possible scheme for EIT in solids by using CQW.

arXiv:0803.1888•Mar 13, 2008•0 citations

Electromagnetically induced transparency and slow light in a Λ-type three-level system of GaAs/AlGaAs multiple quantum wells

Wei Yan, T. Wang, X.M. Li +1 more

A Λ-type three-level system of GaAs/AlGaAs multiple quantum wells (MQWs) was constructed by using exciton spin coherence in the transient optical response. Theoretical analysis with density matrix and Maxwell equations then yielded the phase shift, absorption, group velocity and group velocity dispersion. The calculated velocity is ∼6.14 × 104 m/s and the corresponding pulse delay is ∼8 ps. A convenient basis is provided for investigating how many-body effects in semiconductors modify the magnitude, spectral shape, and space and time dependence of the electromagnetically induced transparency phenomenon.

Journal of Modern Optics•Feb 29, 2012•15 citations
We investigate the possibility of slowing down terahertz light via intersubband transitions in quantum well heterostructures. The slow-down effect is achieved via tunneling induced transparency in a three level Λ-system by careful engineering of the wave functions. The inherently short coherence times in such solid state media inevitably leads to strong absorption of the signal, which we propose to compensate for by incorporating a quantum cascade amplifier (QCA) into the system.
We have investigated the dispersive properties of tunnelling-induced transparency in asymmetric double quantum well structures where two excited states are coupled by resonant tunnelling through a thin barrier in a three-level system of electronic subbands. The intersubband transitions exhibit high dispersion at zero absorption, which leads to the slow light velocity in this medium as compared with that in vacuum ( c =3×10 8 ). The group velocity in a specific GaAs/AlGaAs sample is calculated to be v g = c /4.30. This structure can be used to compensate for the dispersion and energy loss in fibre optical communications.
We have investigated the dispersive properties of tunnelling-induced transparency in asymmetric double quantum well structures where two excited states are coupled by resonant tunnelling through a thin barrier in a three-level system of electronic subbands,The intersubband transitions exhibit high disperision at zero absorption,which leads to the slow light velocity in this medium as compared with that in vacuum(c=3×10^8).The group velocity in a specific GaAs/AlGaAs sample is calculated to be ug=c/4.30,This structure can be used to compensate for the dispersion and energy loss in fibre optical communications.
We report the observation of tunneling induced transparency in asymmetric double quantum well structures. Resonant tunneling through a thin barrier is used to coherently couple the two upper states in a three level system of electronic subbands in a GaAs/AlGaAs structure. This creates Fano-type interferences for the collective intersubband excitations in the absorption from the ground state, analogous to electromagnetically induced transparency (EIT) in atomic systems. We observe a 50% reduction in absorption between the subband resonances which can be explained by taking into account the coherent coupling of the upper states. We analyze the bias dependent absorption spectra and determine the relevant lifetime broadening and dephasing rates for the transitions.
We propose and analyze an efficient scheme for suppressing the absorption of a weak probe field based on intersubband transitions in a four-level asymmetric coupled-quantum well (CQW) driven coherently by a probe laser field and a control laser field. By using the numerical simulation, we find that the magnitude of the transient absorption of the probe field is smaller than the three-level system based on the electromagnetically induced transparency (EIT) at line center of the probe transition, moreover, comparing with the scheme in three-level asymmetric double QW system, the transparency hole of the present work is much broader. By analyzing the steady-state process analytically and numerically, our results show that the probe absorption can be completely eliminated under the condition of Raman resonance (i.e. two-photon detuning is zero). Besides, we can observe one transparency window without requiring one- or two-photon detuning exactly vanish. This investigation may provide the possible scheme for EIT in solids by using CQW.
A Λ-type three-level system of GaAs/AlGaAs multiple quantum wells (MQWs) was constructed by using exciton spin coherence in the transient optical response. Theoretical analysis with density matrix and Maxwell equations then yielded the phase shift, absorption, group velocity and group velocity dispersion. The calculated velocity is ∼6.14 × 104 m/s and the corresponding pulse delay is ∼8 ps. A convenient basis is provided for investigating how many-body effects in semiconductors modify the magnitude, spectral shape, and space and time dependence of the electromagnetically induced transparency phenomenon.