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Japanese Journal of Applied Physics

Switching Time of Optical Memory Devices Composed of Photonic Crystalswith an Impurity Three-Level Atom : Optics and Quantum Electronics

Hiroyuki Nihei, Atsushi Okamoto

Published Dec 15, 2001• 0 citations
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Related papers

Switching Time of Optical Memory Devices Composed of Photonic Crystals with an Impurity Three-Level Atom

Hiroyuki Nihei, Atsushi Okamoto

We calculate the switching time of an optical memory device composed of three-dimensional photonic crystals with an impurity three-level atom, that is, a photonic memory device. We determine the switching time to be a function of the overshoot and the time constant of a decaying oscillation of the upper level population of the impurity atom. The analytical solutions for the overshoot and the time constant are given by using the Euler approach. Using these functions, we calculate the switching time for the Rabi frequency and the transition frequency of the impurity atom. Our results show that the switching time is improved by changing the transition frequency from inside the photonic band gap to outside it and/or by increasing the Rabi frequency, where the transition frequency and the Rabi frequency can be controlled by a small power field. We determine suitable ranges of these frequencies for realizing a high-speed photonic memory device, which are important for atomic-scale optical systems such as high-density integrated optical circuits and quantum computers.

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We propose all-optical switching schemes using a single three-level atomic system placed within a 3D photonic crystal that exhibits a complete 3D photonic band gap. The optical schemes we propose can be classified into two types with respect to a physical process that causes the switching effect. One switching type is mediated by changing an atom-field coupling strength. The other switching type is mediated by controlling quantum interference. Furthermore, we consider conditions of realizing a wide range of signals, which contributes to an improvement of the Signal to Noise ratio. The phases and strengths of the external laser fields required for the all-optical switching are revealed. Next, we estimate their switching times. Using these results, we propose the fastest scheme for every configuration of the atomic system, which is important for realizing a high-speed optical memory or switching device on an atomic scale that can be used in novel optical integrated systems, such as quantum computers.

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The atom sets an ultimate scaling limit to Moore's law in the electronics industry. While electronics research already explores atomic scales devices, photonics research still deals with devices at the micrometer scale. Here we demonstrate that photonic scaling, similar to electronics, is only limited by the atom. More precisely, we introduce an electrically controlled plasmonic switch operating at the atomic scale. The switch allows for fast and reproducible switching by means of the relocation of an individual or, at most, a few atoms in a plasmonic cavity. Depending on the location of the atom either of two distinct plasmonic cavity resonance states are supported. Experimental results show reversible digital optical switching with an extinction ratio of 9.2 dB and operation at room temperature up to MHz with femtojoule (fJ) power consumption for a single switch operation. This demonstration of an integrated quantum device allowing to control photons at the atomic level opens intriguing perspectives for a fully integrated and highly scalable chip platform, a platform where optics, electronics, and memory may be controlled at the single-atom level.

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All-optical Switching and Slow Light in Photonic Crystals

Andrey E. Miroshnichenko, Sergei F. Mingaleev, Kurt Busch +1 more

•Jan 1, 2006•0 citations
We calculate the switching time of an optical memory device composed of three-dimensional photonic crystals with an impurity three-level atom, that is, a photonic memory device. We determine the switching time to be a function of the overshoot and the time constant of a decaying oscillation of the upper level population of the impurity atom. The analytical solutions for the overshoot and the time constant are given by using the Euler approach. Using these functions, we calculate the switching time for the Rabi frequency and the transition frequency of the impurity atom. Our results show that the switching time is improved by changing the transition frequency from inside the photonic band gap to outside it and/or by increasing the Rabi frequency, where the transition frequency and the Rabi frequency can be controlled by a small power field. We determine suitable ranges of these frequencies for realizing a high-speed photonic memory device, which are important for atomic-scale optical systems such as high-density integrated optical circuits and quantum computers.
We propose all-optical switching schemes using a single three-level atomic system placed within a 3D photonic crystal that exhibits a complete 3D photonic band gap. The optical schemes we propose can be classified into two types with respect to a physical process that causes the switching effect. One switching type is mediated by changing an atom-field coupling strength. The other switching type is mediated by controlling quantum interference. Furthermore, we consider conditions of realizing a wide range of signals, which contributes to an improvement of the Signal to Noise ratio. The phases and strengths of the external laser fields required for the all-optical switching are revealed. Next, we estimate their switching times. Using these results, we propose the fastest scheme for every configuration of the atomic system, which is important for realizing a high-speed optical memory or switching device on an atomic scale that can be used in novel optical integrated systems, such as quantum computers.
The atom sets an ultimate scaling limit to Moore's law in the electronics industry. While electronics research already explores atomic scales devices, photonics research still deals with devices at the micrometer scale. Here we demonstrate that photonic scaling, similar to electronics, is only limited by the atom. More precisely, we introduce an electrically controlled plasmonic switch operating at the atomic scale. The switch allows for fast and reproducible switching by means of the relocation of an individual or, at most, a few atoms in a plasmonic cavity. Depending on the location of the atom either of two distinct plasmonic cavity resonance states are supported. Experimental results show reversible digital optical switching with an extinction ratio of 9.2 dB and operation at room temperature up to MHz with femtojoule (fJ) power consumption for a single switch operation. This demonstration of an integrated quantum device allowing to control photons at the atomic level opens intriguing perspectives for a fully integrated and highly scalable chip platform, a platform where optics, electronics, and memory may be controlled at the single-atom level.